• 한국초전도학회:학술대회논문집
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• v.12
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• pp.35-35
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• 2002

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.71.2-71.2
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• 2010

CIS(CuInSe2)계 화합물 태양전지는 높은 광흡수계수와 열적 안정성으로 고효율의 태양전지 제조가 가능하여 화합물 태양전지용 광흡수층으로서 매우 이상적이다. 또한 In 일부를 Ga으로 치환하여 밴드갭을 조절할 수 있는 장점이 있다. 미국 NREL에서는 Co-evaporation 방법을 이용해 20%의 에너지 변환 효율을 달성하였다고 보고된바가 있다. 본 연구에서는 미국의 NREL과 같은 3 stage 방식을 이용하여 광흡수층을 제조하고자 한다. 본 실험에서는 Se 증기압을 각각 $200^{\circ}C$, $230^{\circ}C$, $240^{\circ}C$, $245^{\circ}C$로 달리 하며 실험을 실시하였다. 이때 1st stage의 시간은 15분으로 고정하였으며 기판온도는 약 $250^{\circ}C$로 고정 하였다. 2nd stage는 실시간 온도 감지 장치를 이용하여 Cu와 In+Ga의 조성비가 1:1이 되는 시간을 기준으로 Cu의 조성을 30%더 높게 조절하였으며 기판 온도는 약 $520^{\circ}C$로 고정 후 실험을 실시하였다. 3rd stage의 경우 Cu poor 조성으로 조절하기 위해 모든 조건을 10분으로 고정 후 실험을 실시하였다. 각각의 Se 증기압에 따른 물리적, 전기적 특성을 알아보기 위해 FE-SEM, EDS, XRD 분석을 실시하였다. 본 연구에서 기판은 Na이 첨가되어있는 soda-lime glass를 사용 하였으며 후면 전극으로 약60nm 두께의 Mo를 DC Sputtering 방법을 이용해 증착 하였다.

• Journal of the Korean Vacuum Society
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• v.14 no.1
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• pp.17-23
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• 2005

Glow discharge mass spectrometry(GDMS) was used to determine the impurity concentrations of the deposited Cu films and the 6N Cu target. Cu films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V using a non-mass separated ion beam deposition method. Since do GDMS has a little difficulty to apply to thin films because of the accompanying non-conducting substrate, we have used an aluminum foil to cover the edge of the Cu film in order to make an electrical contact of the Cu film deposited on the non-conducting substrate. As a result, the Cu film deposited at the substrate bias voltage of -50 V showed lower impurity contents than the Cu film deposited without the substrate bias voltage although both the Cu films were contaminated during the deposition. It was found that the concentration change of each impurity in the Cu films by applying the negative substrate bias voltage is related to the difference in their ionization potentials. The purification effect by applying the negative substrate bias voltage might result from the following reasons: 1) Penning ionization and an ionization mechanism proposed in the present study, 2) difference in the kinetic energy of accelerated Cu+ ions toward the substrate with/without the negative substrate bias voltage.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.341-350
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• 1996

The CdS thin films are grown on quartz plate by hot wall epitaxy. The source and substrate temperature is $590^{\circ}C$ and $400^{\circ}C$ respectively, and thickness of the film is $2.5\;\mu\textrm{m}$. Using extrapolation method of X-ray diffraction patterns for the CdS thin film, it was found hexagonal structure whose lattice constant a and c were $4.137\;{\AA}$ and $6.713\;{\AA}$, respectively. Hall effect on this sample was measured by the method of van der Pauw and studied on cattirer density and mobility depending on temperature. From hall data, the mobility was likely to be decreased by piezoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore the applicability as a photoconductive cell we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Cu vapor the photoconductive characteristics are the best. Then we obtained the sensitivity of 0.99, the value of pc/dc of $9.42{\times}10^{6}$, the MAPD of 318 mW, and the rise and decay time of 10 ms and 9 ms, respectively.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2430-2441
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• 2018

Selenium (Se)-rich binary Cu-Se and In-Se nanoparticles (NPs) were synthesized by a modified heat-up method at low temperature ($110^{\circ}C$) using the gum exudates from a cherry blossom tree. Coating of CISe absorber layer was carried out using Se-rich binary Cu-Se and In-Se NPs ink without the use of any external binder. Our results indicated that the gum used in the synthesis played beneficial roles such as reducing and capping agent. In addition, the gum also served as a natural binder in the coating of CISe absorber layer. The CISe absorber layer was integrated into the solar cell, which showed a power conversion efficiency (PCE) of 0.37%. The possible reasons for low PCE of the present solar cells and the steps needed for further improvement of PCE were discussed. Although the obtained PCE is low, the present strategy opens a new path for the fabrication of eco-friendly CISe NPs solar cell by a relatively chief non-vacuum method.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.459-465
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• 1994

A-axis oriened YBCO thin flims were grown on $LaAIO_{3}$ single crystal substrate by off-axis rf magnetron sputtering method. We used two kinds of process to get a-axis oriented fi1ms;one-step process and two-step process. In one-step process, films are grown in single step in which substrate temperature( $T_s$) is in the range of $590^{\circ}C$ to $680^{\circ}C$. On the other hand, in two step process a-axis oriented thin film templates i f about 30nm thickness is deposited at low temperature first, and subsequently films are grown at elevated temperature to the final thickness of about 100nm. In the case of one step process($T_s$ ~)$600^{\circ}C$), prefered a-axis orientation is dominant and Cu-rich phases segregate at the surface. Segregations decrease and ($00 \ell$) peaks increase upon increasing $T_s$. The films prepared by two step method appeared to have strong(h00) peaks as the deposition rate increased. Microstructure shows pin holes resulted from mixed phases of a-axis and c-axis oriented films. In both cases of one step and two step process, as TS decreases, prepared films show stronger a-axis orientation. However electrical properties of the films are depressed with lower $T_c$ and wider $\Delta T$ as $T_s$ decreases.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.271-274
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• 1999

In this paper, we studied the matrix type Powder AC Electroluminescence using ZnS:Cu,Cl Phosphor. Previously, Powder AC EL was used in Backlighting of LCD. Rescently, organic Thin Film EL was rapidly developed because of high Luminescence and low applied voltage. But Powder AC EL has Superior features that include sheet like flexibility thickness, low weight, self-emission, a wide viewing angle and a fast response time. We tried to change of phosphor thickness and binder mixture rate in order to obtain the good condition of powder AC EL and we obtained the very low breakdown voltage that was just 15V. Till now, we measured the current-voltage(V-I), luminance-voltage(V-L), Luminance-current (L-I), color coordinate (CIE), and phosphor Intensity of variable thickness. In experiment result, the devices has the luminance of 840 cd/$m^2$ and improved color coordinate, x=0.1557, y=0.2145, using a 10kHz drive frequency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.108-113
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• 2013

Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.