• 한국자기공명학회논문지
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• 제12권1호
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• pp.14-25
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• 2008

To investigate the 3-bond connectivity of human brain metabolites by scalar coupling interaction through 2D-correlation spectroscopy (COSY) techniques using high field NMR spectroscopy. All NMR experiments were performed at 298K on Unity Inova 500 or 600 (Varian Inc.) equipped with a triple resonance probe head with z-shield gradient. Human brain metabolites were prepared with 10% $D_2O$. Two dimensional 2D COSY spectra were acquired with 4096 complex data points in $t_2$ and 128 or 256 increments in $t_1$ dimension. The spectral width was 9615.4 Hz and solvent suppression was achieved using presaturation using low power irradiation of the water resonance during 2s of relaxation delay. NMR data were processed using VNMRJ (Varian Instrument) software and all the chemical shifts were referenced to the methyl resonance of N-acetyl aspartate (NAA) peak at 2.0 ppm. Total 10 metabolites such as N-acetyl aspartate (NAA), creatine (Cr), choline (Cho), glutamine (Gln), glutamate (Glu), myo-inositol (Ins), lactate (Lac), taurine (Tau), ${\gamma}$-aminobutyricacid (GABA), alanine (Ala) were included for major target metabolites. Symmetrical 2D-COSY spectra were successfully acquired. Total 14 COSY cross peaks were observed even though there were parallel/orthogonal noisy peaks induced by water suppression. Except for Cr, all of human brain metabolites produced COSY cross peaks. The spectra of NAA methyl proton at 2.02 ppm and Glu methylene proton ($CH_2(3)$) at 2.11 ppm and Gln methylene proton ($CH_2(3)$) at 2.14 ppm were overlapped in the similar resonance frequency between 2.00 ppm and 2.15 ppm. The present study demonstrated that in vitro 2D-COSY represented the 3-bond connectivity of human brain metabolites by scalar coupling interaction. This study could aid in better understanding the interactions between human brain metabolites in vivo 2D-COSY study. Also it would be helpful to determine the molecular stereochemistry in vivo by using two-dimensional MR spectroscopy.

• 한국재료학회지
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• 제16권10호
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• pp.619-623
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• 2006

Selective vapor deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT), thin films has been carried out on self assembled monolayers patterned oxide substrate. Since the 3,4-ethylenedioxythiophene(EDOT) monomer can be polymerized only in the presence of oxidant such as $FeCl_3$, the PEDOT thin film is selectively deposited on patterned $FeCl_3$, which only adsorbs on the partly removed SAMs region due to the inability of $FeCl_3$ to adsorb on SAMs. Therefore, the partly removed SAMs can act as an adsorption layer for the $FeCl_3$ and also as a glue layer for the deposition of PEDOT, resulting in the significantly increased adhesion of PEDOT to $SiO_2$ substrate. The use of UV lithography and Cr patterned quartz mask provided the formation of SAMs patterns on oxide substrates, which allowed for the selective deposition of conductive PEDOT thin films.$^{oo}The$ new process was successfully developed for the selective deposition of PEDOT thin films on SAMs patterned oxide substrate, providing a new way for the patterning of vapor phase deposition of PEDOT thin films with accurate alignment and addressing the inherent adhesion issues between PEDOT and dielectrics.

• 한국재료학회지
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• 제13권9호
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• pp.593-597
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• 2003

Anodic aluminum oxide (AAO) membrane was made of aluminum sheet (99.6%, 0.2 mm thickness). The regular array of hexagonal nano pores or channels were prepared by two step anodization process. A detail description of the AAO fabrication is presented. After the 1st anodization in oxalic acid (0.3 M) at 45 V, The formed AAO was removed by etching in a solution of 6 wt% $H_3$$PO_4$＋1.8 wt% $H_2$$CrO_4$. The regular arrangement of the pores was obtained by the 2nd anodization, which was carried out in the same condition as the 1st anodization. Subsequently, the alumina barrier layer at the bottom of the channel layer was removed in phosphoric acid (1M) after removing of aluminum. Pore diameter, density, and thickness could be controlled by the anodization process parameters such as applied voltage, anodizing time, pore widening time, etc. The pore diameter is proportional to the applied voltage and pore widening time. The pore density and thickness can be controlled by anodization temperature and voltage.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Journal of Welding and Joining
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• 제28권3호
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• pp.92-98
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• 2010

Ferritic stainless steels, which have relatively small thermal expansion coefficient and excellent corrosion resistance, are increasingly being used in vehicle manufacturing, in order to increase the lifetime of exhaust manifold parts. But, there are limits on use because of the problem related to cosmetic resistance, corrosions of condensation and high temperature salt etc. So, Aluminum-coated stainless steel instead of ferritic stainless steel are utilized in these parts due to the improved properties. In this investigation, Al-8wt% Si alloy coated 409L ferritic stainless steel was used as the base metal during Gas Tungsten Arc(GTA) welding. The effects of coated layer on the microstructure and hardness were investigated. Full penetration was obtained, when the welding current was higher than 90A and the welding speed was lower than 0.52m/min. Grain size was the largest in fusion zone and decreased from near HAZ to base metal. As welding speed increased, grain size of fusion zone decreased, and there was no big change in HAZ. Hardness had a peak value in the fusion zone and decreased from the bond line to the base metal. The highest hardness in the fusion zone resulted from the fine re-precipitation of the coarse TiN and Ti(C, N) existed in the base metal during melting and solidification process and the presence of fine $Al_2O_3$ and $SiO_2$ formed by the migration of the elements, Al and Si, from the melted coating layer into the fusion zone.

• 한국산업융합학회 논문집
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• 제7권3호
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• pp.259-263
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• 2004

In the manufacture progress of LCD or semiconductor, there are used many kinds of gas like erosion gas, dilution gas, toxic gas as a progress which used these gas there are required high puritize to increase accumulation rate of semiconductor or LCD materials work progress of semiconductor or LCD it demand many things like the material which could minimize metallic dust that could be occured by reaction between gas and transfer pipe laying material, illumination of the surface, emition of the gas, metal liquation, welding etc also demand quality geting stricted. Material-Low-sulfur-contend (0.007-0010), vacuum-arc-remelt(VAR), seamless, high-purity tubing material is recommend for enhance welding lower surface defect density All wetted stainless steel surface must be 316LSS elecrto polishinged with ${\leq}0.254{\mu}m$($10.0{\mu}in$) Ra average surface finish, $Cr/Fe{\geq}1.1$ and $Cr_2O_3$ thickness ${\geq}25{\AA}$ From the AES analytical the oxide layer thickness (23.5~36 angstroms silicon dioxide equivalent) and chromum to iron ratios is similar to those generally found on electropolished stainless steel., molybdenum and silicon contaminants ; elements characteristic of stainless steel (iron, nickel and chromium); and oxygen were found on the surface Phosphorus and nitrogen are common contaminants from the electropolish and passivation steps.

• 한국결정성장학회지
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• 제19권2호
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• pp.90-94
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• 2009

Mong Hsu rubies from Myanmar were heat treated in oxidizing(oxygen) atmosphere at $1650^{\circ}C$ for 1 hour. The investigations of the micro-structural defects in the samples before and after heat treatment have been carried out by the variety of analysis techniques of FTIR, UV-VIS-NIR and SEM-EDS. It was found that after heat treatment the dark blue cores region were disappeared and turned to orange red color with the presence of the dense cloudy brownish colored tiny particles in and near former blue zoning. As-received ruby samples only revealed the presence of FTIR absorption peaks of diaspore, boehmite and O-H stretching, at 1986, 2115 and $3078/3319\;cm^{-1}$ respectively. The UV-VIS-NIR absorption of as-received and heat treated ruby samples similarly showed peaks at 405, 554 and 693 nm associated with $Cr^{3+}$, but for the same samples, the absorption peak of heat-treated ruby samples at 693 nm was somewhat stronger than that of the untreated ruby samples. Especially the presence of $Cr^{3+}$ peaks at 659 and 675 nm was found obviously in as-received ruby samples only. The SEM-EDS investigation disclosed the micro-porous defect structures commonly related to the core regions of the untreated ruby samples, which after heat treatment in an oxidizing environment those defect features have been dissolved into the host phase resulting in the lightening or disappearance of the dark coloration of ruby core.

• Corrosion Science and Technology
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• 제9권1호
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• pp.20-28
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• 2010

According to the bipolar model, ion selectivity of some species in the passive film is important factor to control the passivation. An increase of cation selectivity of outer layer of the passive film can stabilize the film and improves the corrosion resistance. Therefore, the formation and roles of ionic species in the passive film should be elucidated. In this work, two types of solution (hydrochloric or sulfuric acid) were used to test high N and Mo-bearing stainless steels. The objective of this work was to investigate the formation of oxyanions in the passive film and the roles of oxyanions in passivation of stainless steel. Nitrogen exists as atomic nitrogen, nitric oxide, nitro-oxyanions (${NO_x}^-$), and N-H species, not nitride in the passive film. Because of its high mobility, the enriched atomic nitrogen can act as a reservoir. The formation of N-H species buffers the film pH and facilitates the formation of oxyanions in the film. ${NO_x}^-$ species improve the cation selectivity of the film, increasing the oxide content and film density. ${NO_x}^-$ acts similar to a strong inhibitor both in the passive film and at active sites. This facilitates the formation of chromium oxide. Also, ${NO_x}^-$ can make more molybdate and nitric oxide by reacting with Mo. The role of Mo addition on the passivation characteristics of stainless steel may differ with the test environment. Mo exists as metallic molybdenum, molybdenum oxide, and molybdate and the latter facilitates the oxide formation. When nitrogen and molybdenum coexist in stainless steel, corrosion resistance in chloride solutions is drastically increased. This synergistic effect of N and Mo in a chloride solution is mainly due to the formation of nitro-oxyanions and molybdate ion. Oxyanions can be formed by a 'solid state reaction' in the passive film, resulting in the formation of more molybdate and nitric oxide. These oxyanions improve the cation selectivity of the outer layer and form more oxide and increase the amount of chromium oxide and the ratio of $Cr_2O_3/Cr(OH)_3$ and make the film stable and dense.

• Journal of Preventive Medicine and Public Health
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• 제6권1호
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• pp.27-41
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• 1973

In order to provide some basic data for the control of air and water pollution in Korea, the authors have estimated the amount of air and water pollutants emitted from industries which are employed over 20 employees. This study have done from July 1, 1972 to the end of March 1973. The results are as followings; 1. Total number of establishments with over 20 employees is 5,197 in Korea and the largest group establishments was the manufacturing of textiles with 1,363 establishments (26.2%). 2. By order of number of employees it was observed that there 2,800 industries with 20-59(53.9%) employees, 1,101 with 50-99 (21.2%), 571 with 100-199 (11.0%), 501 with 200-499 (9.6%) and 225 with over 500 (4.3%) respectively. 3. By order of regional distribution, it was observed that there were 2,257 industries in Seoul (43.2%) and 736 industries in Pusan(14.2%). 4. Industrial coal consumption was 596,154 M/T in 1972, but it' 11 be 315,000 M/T in 1980. Fuel consumption was 4,972,000 K1 in 1972, and estimated volume will be 19,370,000 K1 in 1980. 5. Total amounts of air polutants entitled from industries by fuel combustion were sulfur oxides 79,459 tons, carbon monoxide 33,908 tons, particulate 31,304 tons and hydrocarbon 30,280 tons in 1972 but in 1990 there will be sulfur oxides 1,010,474 tons, nitrogen oxides 204,575 tons, carbon monoxide 68,014 tons, particulate 64,820 tons and hydrocarbon 67,622 tons, respectively. 6. Annual emitted air pollutants through the working processes were sulfur oxides 91,250 tons and nitrogen oxides 32,485 tons in 1972, but sulfur oxides 118,625 tons and nitrogen oxides 42,555 tons will be present in 1980, respectively. 7. Annual emitted air pollutants by national unit area amounted to $0.77ton/km^2/year$ in 1965 and $14.7ton/km^2/year$ in 1980. 8. Total industrial wastes from all industries in Korea were estimated at 810,360 tons/day in 1972; manufacturing of chemicals and plastic products showed the highest amount of wastes at 470,000 tons/day. 9. The amounts of water pollutants due to industrial wastes were the B.O.D., 471.5 tons/day, suspended solid 331.5 tons/day, CN, 2.3 tons/day, and Cr. 3.4 tons/day in 1972, but it might be evident of a B.O.D. of 3,388 tons/day, suspended solid 2,544 tons/day, CN 20.1 tons/day, and 26.5 tone/day in 1990. 10. Total population equivalent of B.O.D. was 943,000 in 1972, and the estimated value in 1950 will be 6,780,000.

• 한국환경과학회지
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• 제29권11호
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• pp.1055-1064
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• 2020

In this research, heavy metals and T-P removal characteristics of plated wastewater are derived using BPC(Break Point Chlorination) process. AA sedimentation pond outflow(Influence) was evaluated for the removal efficiency of heavy metal(Ni) and T-P at a reaction time of 25 minutes by NaOCl input volume(9, 11, 13 and 15 mL). In the case, the higher the NaOCl input volumes, the higher the ORP values were maintained and the higher the removal efficiency tended to be. On the other hand, T-P was judged to have a low relationship between the ORP value and the removal efficiency. In addition, the efficiency of removal heavy metals and T-P in the plated wastewater by injecting 10 mL, 15 mL, 20 mL and 25 mL NaOCl, increased as the amount of NaOCl injected increased, the amount of NaOH input for pH increased. It was found that suspended solid in effluence also increased. It was also observed that the color of the plating wastewater changed from yellowish green to green to charcoal gray to black as the amount of NaOCl injected increased. Treatment characteristics of the reaction time, the longer the reaction time with the substance to be treated after the input of NaOCl, the more the heavy metal removal efficiency tended to increase. Through XRF analysis of the sludge, the constituents in the sludge such as NaCNO, CNCl, Na₃PO₄, CrO₄, 2Na₂CrO₄ and 2NaNO₃ will be analyzed in detail, and the mechanisms of the reaction between the plated wastewater and the complex compound will be elucidated.