• 제목/요약/키워드: $CoSi_2$contact

검색결과 79건 처리시간 0.029초

단일 유압 Cell로 제어되는 CPB(Cold Pad Batch)용 패더롤의 접촉압력 특성 연구 (A Study on the Characteristic of Contact Pressure for CPB (Cold Pad Batch) Padder Roll Controlled by Hydraulic Single Cell)

  • 조경철;이은하;조순옥;박시우;황윤성;김수연
    • 한국염색가공학회지
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    • 제29권2호
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    • pp.86-96
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    • 2017
  • To make uniform pressure distributed over the contact surface was necessary to cold pad batch dyeing machine. In this study, to confirm characteristic of flexibility and the contact pressure distribution through experimental analysis of padder roll were controlled by hydraulic cell. When there were no load pressure only inner pressure, the value of displacement in the center of padder were greater than the end of the padder. The results of this study showed that the padder had the optimum value of inner pressure for uniform contact pressure distribution. Measuring the contact pressure in a padder system were driven by using a pre-scale film. Uniform contact pressure distribution of cell padder were a linearly with load pressure and inner pressure. When the load pressure was less than 8 tons, the inner pressure for the uniform contact pressure was 1~4 bar. The padder roll performance curves proposed in this study were available for practical production environments and various roll designs.

Effeet of Al2O3, MgO and SiO2 on Sintering and Hydration Behaviors of CaO Ceramics

  • Kim, Do-Kyung;Cho, Churl-Hee;Goo, Bong-Jin;Lee, Kee-Sung
    • 한국세라믹학회지
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    • 제39권6호
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    • pp.528-534
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    • 2002
  • CaO ceramics were prepared by conventional sintering process and their hydration behaviors were evaluated by measuring weight increment on saturated water vapor pressure at ambient temperature. CaCO$_3$ and limestone were used as CaO source materials and $Al_2$O$_3$, MgO and SiO$_2$ were added as sintering agents. $Al_2$O$_3$ was a liquid phase sintering agent to increase densification and grain growth rates, whereas MgO and SiO$_2$, densification and grain growth inhibitors. Regardless of composition, all of the prepared CaO ceramics showed the improved hydration resistance as bulk density increased. Especially, when bulk density was more than 3.0 g/㎤, there was no weight increment after 120 h of hydration. Therefore, to decrease contact area between CaO and water vapor by increasing bulk density with the $Al_2$O$_3$ sintering additive was effective for the improvement of CaO hydration resistance.

CoMo, NiMo/ZSM-5 촉매상에서 동시적인 수첨탈황과 수소화 분해반응에 관한 연구 (A Study of Simultaneous Hydrodesulfurization and Hydrocracking Reactions over CoMo, NiMo/ZSM-5 Catalysts)

  • 정우식;고을석;김경림
    • 한국대기환경학회지
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    • 제9권2호
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    • pp.140-146
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    • 1993
  • CoMo, NiMo/ZSM-5 catalysts were prepared at Si/Al ratios of 100, 200 and characterized by TGA, XRD and SEM. Simultaneous hydrocracking of n-heptane and hydrodesulfurization of DBT were studied over these catalysts at the ranges of temparatures between 400$^\circ$C and 500$^\circ$C, pressure of 30 $\times 10^5$ Pa and contact time of 0.02g cat. hr/ml feed in a fixed bed flow reactor. It was shown that the hydrocracking activity of n-heptane increased in the order of NM 100, CM 100, NM 200 and CM 200 catalysts. It was also shown that the Hydrodesulfurization activity of DBT increased in the order of CM 200, NM 200, CM 100 and NM 100 catalysts and these results were thought to be that the increase of acidity of catalysts might increase hydrocracking activity of these catalysts but deactive those simultaneously. In this study it was shown that CM 100 and NM 200 were active catalysts in simultaneous hydrodesulfurization of DBT and hydrocracking of n-heptane reactions.

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IGZO 박막의 CO2 가스 반응에 대한 안정성 (Stability of Gas Response Characteristics of IGZO)

  • 오 데레
    • 반도체디스플레이기술학회지
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    • 제17권3호
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    • pp.17-20
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    • 2018
  • IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.

MoO3 Morphology 변화가 수소 Spillover에 미치는 영향 (Effect of MoO3 Morphological Change over Hydrogen Spillover Kinetics)

  • 김진걸
    • 공업화학
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    • 제10권8호
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    • pp.1109-1113
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    • 1999
  • 함침법에 의하여 제조된 $Pt/MoO_3$$Pt/MoO_3/SiO_2$$Pt^{\circ}$$MoO_3$를 기계적으로 혼합한 촉매를 사용한 $50^{\circ}C$ 등온 환원 실험에서 소성 온도가 증가할수록, $H_2$ spillover에 의하여 Pt로부터 $MoO_3$로 이동하여 저장되는 $H_2$가 증가하는 것을 측정하였다. 연속적으로 실행한 CO chemisorption에 의하여 $H_2$ spillover에 참가하는 $H_2$에 노출된 Pt 표면적이 감소하는 것을 알 수 있었다. 또한, TEM 결과로부터 $400^{\circ}C$에서 소성 후 Pt결정 표면에 $MoO_x$ overlayer가 형성되는 것을 관찰하였다. 그러므로, 표면 형상 변화에 따른 Pt과 $MoO_3$간의 활성접촉점 증가가 $H_2$ spillover에 의한 $MoO_3$로의 $H_2$ 이동을 증가시키는 원인 중의 하나인 것으로 판명된다.

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이산화탄소 지중저장 조건에서 초임계이산화탄소와 염수 반응에 의한 Ca-사장석, 각섬석, 감람석의 지화학적 변화 연구 (Study for the Geochemical Reaction of Ca-feldspar, Amphibole and Olivine with Supercritical $CO_2$ and Brine on the $CO_2$ Sequestration Condition)

  • 강현민;박민호;박상희;이민희;왕수균
    • 자원환경지질
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    • 제44권2호
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    • pp.123-133
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    • 2011
  • 이산화탄소 지중저장지에서 초임계이산화탄소(supercritical $CO_2$)-광물-염수 반응에 의한 광물의 지화학적 변화를 규명하는 실내 실험을 실시하였다. 초임계$CO_2$로 존재하는 지중저장 온도/압력조건(100 bar와 $50^{\circ}C$)을 재현한 스테인레스 셀(용량 110 ml) 내부에 100 ml의 염수를 주입하였다. 염수는 부산 해안가 지하 800 m 깊이 지하수 채수정에서 채수한 염수를 사용하였으며, 실험 대상 광물로는 $CO_2$와 반응이 잘 일어나는 것으로 보고된 Ca, Fe, Mg 성분이 풍부한 Ca-사장석, 각섬석, 감람석 시료를 사용하였다. 각 광물 시료를 슬랩($10\;mm{\times}10\;mm$)으로 제작하여 표면을 폴리싱한 후 염수가 담긴 고압셀 내부 하부에 고정시키고 초임계 $CO_2$를 주입한 후 30일 동안 반응시켰다. 실험 전 광물 표면을 반사현미경과 SPM을 사용하여 영상화하였으며, 표면 당 3 지점을 임의로 선택하여 주변 면적 ($20\;{\mu}m{\times}20\;{\mu}m$)의 표면거칠기값(SRV: surface roughness value)을 구하였다. 반응 후 일정 시간 간격으로 고압셀 내 광물 표면에 대하여 SPM 분석과 표면거칠기값 계산을 반복하여 초임계 $CO_2$-광물-염수 반응에 의해 변화된 광물 표변을 정량화 하였으며, 염수에 용해된 양이온 종류와 농도를 분석하고, 광물 표면에 형성된 2차 광물 분석을 위해 SEM/EDS 분석을 실시하였다. Ca-사장석의 경우 초임계 $CO_2$가 용해된 염수와 반응하여 광물 표면의 평균 SRV는 30일 동안 2.77 nm에서 20.87 nm로 증가하여 지화학반응에 의하여 상당한 광물 표면 풍화가 발생하였음을 알 수 있었다. 각성석과 감람석의 경우에는 평균 SRV가 2.54 nm와 0.77 nm에서 각각 8.31 nm와 11.03 nm로 증가하였다. 반응에 의해 염수에 용해된 이온은 Ca-사장석의 경우 $Ca^{2+}$, $Na^+$, $Fe^{2+}$, $Si^{4+}$, $K^+$, $Mg^{2+}$ 순이었으며, 각섬석의 경우에는 $Si^{4+}$, $Ca^{2+}$, $Fe^{2+}$, $Mg^{2+}$ 순으로 나타났다. 각섬석과 감람석 광물 표면에는 만상에 의해 철(또는 마그네슘)-(수)산화물이 2차 광물로 형성됨을 SEM/EDS 분석결과로 알 수 있었다. 실험 결과로부터 $Ca^{2+}$, $Fe^{2+}$, $Mg^{2+}$이 풍부한 광물의 경우 $CO_2$ 지중저장 시 초임계 $CO_2$-광물-염수 반응에 의해 짧은 시간 내에 심한 풍화작용을 일으켜 광물의 물성 변화를 일으킬 수 있음을 입증하였다.

중부옥천변성대의 활석광화작용에 관한 연구 (II) : 풍전활석광상을 중심으로 (Talc Mineralization in the Middle Ogcheon Metamorphic Belt (II) : Poongjeon Talc Deposit)

  • 박희인;이인성;허순도;신동복
    • 자원환경지질
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    • 제30권6호
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    • pp.543-551
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    • 1997
  • Poongjeon talc deposits is emplaced in dolomite and dolomitic limestone of the Cambro-Ordovician Samtaesan Formation. Ore in Poongjeon is low grade talc and the deposit has been known as the contact metasomatic or hydrothermal replacement type related to the intrusion of late Cretaceous granite in this area. X-ray diffraction, electron microprobe analysis, fluid inclusion and stable isotope analysis were utilized to examine the mineralogy of the ore and the origin of the ore fluid. The ore from Poongjeon mine mainly consists of talc and tremolite with minor amount of illite, vermiculite, smectite, and chlorite-vermiculite mixed layer. Occurrence of ore body indicates that the talc-tremolite ore was formed through the replacement by the $SiO_2$-rich hydrothermal fluid along the bedding and dike boundaries, or contact of amphibolite and basic dike with carbonate rocks. The temperature and pressure of the ore forming fluids at the time of the talc mineralization were estimated as $350^{\circ}C$ and 400 bar, respectively, based on the heating and freezing data of the fluid inclusions in quartz from talc-tremolite veins. During the talc-tremolite formation, fluids were divided into $CO_2$-enriched fluid and $CO_2$-poor fluid from $CO_2$ immiscibility (or effervescence). Oxygen isotope values (${\delta}^{18}O$) of the talc-tremolite fall within a range between 12.2 and 12.9‰. Hydrogen isotope values(${\delta}D$) of the ore range from -60 to -85‰ and $H_2O$ contents range from 2.0 to 3.4 wt.%. ${\delta}^{18}O$ and ${\delta}D$ values of talc ore indicate that the hydrothermal fluid involved in talc-tremolite formation was of igneous origin. Oxygen and hydrogen isotopic exchange between talc ore and the surface water was negligible after talc-tremolite ore formation.

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원자층 증착법으로 증착된 MoOx를 적용한 전하 선택 접합의 이종 접합 태양전지 (Heterojunction Solar Cell with Carrier Selective Contact Using MoOx Deposited by Atomic Layer Deposition)

  • 정민지;조영준;이선화;이준신;임경진;서정호;장효식
    • 한국재료학회지
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    • 제29권5호
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    • pp.322-327
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    • 2019
  • Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

습식식각을 이용한 HfO2 박막의 식각특성 (Characteristics of HfO2 Thin Films Using Wet Etching)

  • 양정열;곽노석;임정훈;최용재;황택성
    • 한국전기전자재료학회논문지
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    • 제24권9호
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    • pp.687-692
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    • 2011
  • Hafnium oxide ($HfO_2$) was very advantageous for substitute material of gate on existing transistor. $HfO_2$ has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, $HfO_2$ and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of $HfO_2$ and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of $HfO_2$ was higher than thermal oxide due to $H^+$, $F^-$, and $HF_2^-$ ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive.

Antibacterial property and characterization of CuSn thin films deposited by RF magnetron co-sputtering method

  • 강유진;박주연;김동우;김학준;강용철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.360.2-360.2
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    • 2016
  • CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

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