• 한국세라믹학회지
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• 제38권4호
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• pp.337-342
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• 2001

PDP(Plasma Display Panel)용 녹색 형광체인 Zn$_2$SiO$_4$:Mn에 채-dopant로 Al을 첨가하여 졸-겔법으로 합성하였다. 졸-겔법으로 제조한 형광체는 기존의 고상 반응에 의해 합성된 경우보다 낮은 온도(1000-110$0^{\circ}C$)에서 Zn$_2$SiO$_4$단일상을 형성하였으며, 300-500nm의 비교적 균일한 입자를 얻을 수 있었다. 또한, co-dopant인 Al을 첨가함으로써 발광휘도를 향상시키고, 전광시간을 줄일 수 있었다. 한편, TEOS의 가수분해시 $H_2O$/TEOS 비율을 조절하여 발광의 최적 조건을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.155-159
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• 2003

Polycrystalline $Ti_{1-x}Co_xO_2$ thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{1-x}Co_xO_2$ thin films with $x{\leq}0.05$ showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the $Ti_{1-x}Co_xO_2$ (TCO) phases. On the other hand, in case of thin films above x=0.05, Co clusters formed in a homogeneous $Ti_{1-x}Co_xO_2$ Phase, and the overall ferromagnetic (FM) properties depended on both $FM_{TCO}$ and $FM_{Co}$. Co clusters with about 10nm-150nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1555-1557
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• 2004

The Pt-doped $SnO_2$ thin film for CO sensor applications obtained by RF sputtering from a target of the same compound in an Ar-$O_2$ atmosphere. Pt-SnO2-SiC Schottky diode detection of CO gas Cause the remarkable change in electrical resistivity of the semiconductor. the good gas sensitivity is shown when annealing condition is 600$^{\circ}C$, 1hr in RTP and detected temperature is 350$^{\circ}C$.

• 한국표면공학회지
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• 제37권6호
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• pp.360-365
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• 2004

Ti$_3$SiC$_2$ material was synthesized via the powder metallurgical route, and oxidation tested between 900 and $1200^{\circ}C$ in air for up to 100 hr. The oxidation of $Ti_3$$SiC_2$ material resulted in the formation of $TiO_2$and $SiO_2$, accompanying the evolution of CO or $CO_2$ gases from the initial stage of oxidation. The oxidation resistance of $Ti_3$$SiC_2$ mainly owes the protectiveness of highly stoichiometric $SiO_2$. During the initial stage of oxidation, the dominant reaction was the inward transport of oxygen into the matrix. As the oxidation progressed, an outer $TiO_2$ layer and an inner ( $TiO_2$ + $SiO_2$) mixed layer formed. Between these layers and inside the oxide scale, numerous fine voids formed. Numerous, fine oxide grains formed at $900^{\circ}C$ developed into the outer coarse $TiO_2$ grains and an inner fine ($TiO_2$ + $SiO_2$) mixed grains at the higher temperatures. The oxidation resistance of$ Ti_3$SiC$_2$ progressively deteriorated as the oxidation temperature increased, forming thick scales above $1000^{\circ}C$. The outer coarse $TiO_2$ grains formed above $1100^{\circ}C$ grew rapidly mainly along (211).

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.243-249
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• 2014

Three single crystals of fully dehydrated $Co^{2+}$-exchanged zeolite Y (Si/Al = 1.56) were prepared by the exchange of $Na_{75}$-Y ($|Na_{75}|[Si_{117}Al_{75}O_{384}]$-FAU) with aqueous streams 0.05 M in $Co(NO_3)_2$, pH = 5.1, at 294 K for 6 h, 12 h, and 18 h, respectively, followed by vacuum dehydration at 673 K. Their single-crystal structures were determined by synchrotron X-ray diffraction techniques in the cubic space group Fd3m at 100(1) K. They were refined to the final error indices $R_1/wR_2$ = 0.0437/0.1165, 0.0450/0.1228, and 0.0469/0.1278, respectively. Their unit-cell formulas are $|Co_{29.1}Na_{11.8}H_{5.0}|[Si_{117}Al_{75}O_{384}]$-FAU, $|Co_{29.8}Na_{11.0}H_{4.4}|[Si_{117}Al_{75}O_{384}]$-FAU, and $|Co_{30.3}Na_{9.5}H_{4.9}|[Si_{117}Al_{75}O_{384}]$-FAU, respectively. In all three crystals, $Co^{2+}$ ions occupy sites I, I' and II; $Na^+$ ions are also at site II. The tendency of $Co^{2+}$ exchange slightly increases with increasing contact time as $Na^+$ content and the unit cell constant of the zeolite framework decrease.

• 한국세라믹학회지
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• 제48권6호
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• pp.559-564
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• 2011

In order to investigate the behavior of $SiO_2$ in the molybdenum silicide powders, crystal structure of these powders was measured by XRD, in addition, surface composition and surface phase (or chemical states) and microstructure were analysed by XPS and TEM, respectively. Mo-silicide powders containing $SiO_2$ were synthesized by SHS (Self-Propagating High-Temperature Synthesis) technique. In XRD result, according to increase of $SiO_2$ contents, the crystal structure for synthesized $MoSi_2$ powders was still typical $MoSi_2$ bct without any other phases. By XPS analysis, the surface of Mo and Si source powders was covered with $MoO_3$ and $SiO_2$, respectively, and the surface of synthesized $MoSi_2$ powder was also covered with $MoO_3$ and $SiO_2$, which were stable oxides at room temperature. However, according to increase of $SiO_2$ addition, $MoSi_2$ phase in XPS spectra decreased and $SiO_2$ phase increased relatively in synthesized $MoSi_2$ powders. From the results by XPS and XRD, we found that the existent $SiO_2$ has amorphous structure. In the microstructure, the small particulates of the synthesized products added $SiO_2$ agglomerated together to form larger clusters (from ~10 nm to ~1 ${\mu}m$). From TEM, XPS, and XRD results, we found that the out layer of agglomeration of synthesized $MoSi_2$ powder is surrounded by amorphous $SiO_2$.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.669-673
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• 2002

Ni catalyst (Ni: 15 wt%) supported on precalcined SiO2 has been investigated in reforming reactions of methane to synthesis gas. The catalyst exhibited fairly good activity and stability in partial oxidation of methane (POM), whereas it deactivated in steam reforming of methane (SRM). Pulse reaction results of CH4, O2, and CH4/O2 revealed that Ni/SiO2 has high capability to dissociate methane. The results also revealed that both CH4 and O2 are activated on the surface of metallic Ni, and then surface carbon species react with adsorbed oxygen to produce CO and CO2 depending on the bond strength of the oxygen species on the catalyst surface.

• 한국의류학회지
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• 제37권2호
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• pp.224-234
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• 2013

This study investigates the fabrication of core-sheath nanocomposite fibers by locating germanium (Ge) and silicon dioxide ($SiO_2$) nanoparticles selectively in the sheath layer by co-axial electrospinning. Co-axially spun fibers were prepared by electrospinning a pure PVA solution and Ge/$SiO_2$/PVA solution as the core and sheath layer, respectively. Core-sheath nanocomposite fibers were electrospun under a variety of conditions that include various feed rates for the core and sheath solutions, voltages, and concentric needle diameters, in order to find an optimum spinning condition. Ge/$SiO_2$ nanocomposite fibers were also prepared by uniaxial electrospinning to compare fiber morphology and nanoparticle distribution with core-sheath nanofibers. Using scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray analysis, it was demonstrated that the co-axial approach resulted in the presence of nanoparticles near the surface region of the fibers compared to the overall distribution obtained for uni-axial fibers. The co-axially electrospun Ge/$SiO_2$/PVA nanofiber webs have possible uses in high efficiency functional textiles in which the nanoparticles located in the sheath region provide enhanced functionality.

• Journal of Advanced Marine Engineering and Technology
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• 제33권2호
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• pp.322-329
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• 2009

Machinability of LAM(Laser Assisted Machining) has been studied for ceramics such as $Al_2O_3$, $Si_3_N4$ and $ZrO_2$ by $CO_2$ laser. It was possible to remove ceramics by PCBN tool because material became softening and deterioration by local laser beam irradiation. The advantage of LAM is the ability to produce larger material removal rates and tool life. But, for cutting of $Al_2O_3$ and $ZrO_2$, stage of laser power control was needed owing to thermal shock with high temperature of workpiece by laser power. And when $Si_3N_4$ was machined by LAM, $N_2$ gas spouted from surface of one cause of high temperature. Characteristics of LAM were analyzed using pyrometer, dynamometer, SEM and EDS to measure temperature of workpiece surface, cutting force, variation of machining surface and structure of lattice respectively. As the result of this study, it was found that machinability of LAM for ceramics in $CO_2$ laser and mechanism of LAM was different according to the kind of ceramics because of properties of materials.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.6-11
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• 2008

In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve $Si/SiO_2$ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state $(N_{it})$ respectively. After FN stress for verifying reliability, however, we identified rapid increase of $N_{it}$ for TiN gate with HA, which is attributed to hydrogen related to a change of $Si/SiO_2$ interface characteristic. In contrast to HA, PN showed an improved Nit and gate oxide leakage characteristic due to several possible effects, such as blocking of Chlorine (Cl) diffusion and prevention of thermal reaction between TiN and $SiO_2$.