• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.315-323
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• 1991

The preparation of zirconium carbide powders by the halogenide process of ZrCl4-C-Mg system (1:1:2, molar ratio) was studied between 300。 and 120$0^{\circ}C$ under Ar gas flow (200 mι/min). The formation mechanism and kinetics of zirconium carbide and characteristics of the synthesized powder were examined by TG-DTA, XRD, SEM and PSA. 1) The formation mechanism of zirconium carbide were as follows, above 30$0^{\circ}C$ ZrCl4(S)+Mg(s)longrightarrowZrCl2(s)+MgCl2(s) above 40$0^{\circ}C$ ZrCl2(S)+Mg(s)longrightarrowZr(s)+MgCl2(s) above 50$0^{\circ}C$ Zr(s)+C(s)longrightarrowZrC(s) 2) The apparent activation energy of the reduction-carbonization at temperature of 800$^{\circ}$to 100$0^{\circ}C$ was 11.9 kcal/mol. 3) The lattice parameter and the crystallite size of ZrC which was produced from the mixture powder of ZrCl4, C and Mg (1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were 4.700A and 180A, respectively. 4) The powders obtained from the mixture powder of ZrCl4, C and Mg(1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were agglomerate with the average size of about 13${\mu}{\textrm}{m}$ in SEM micrograph.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.174-177
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• 2003

$Cl_2$ 플라즈마를 이용한 BLT 박막의 식각에서 Ar 가스의 첨가에 따른 식각 속도, 선택비 및 식각 형상의 변화에 대하여 관찰하였다. BLT 박막의 식각 속도는 100% Ar 플라즈마에서 100 % $Cl_2$ 플라즈마에서의 식각 속도보다 약 1.5배정도 빨랐으며, 80% Ar/20% $Cl_2$ 조건에서 $503{\AA}/min$ 최대 식각의 최대 시각 속도를 얻었다. RF 전력과 직류 바이어스 전압을 증가함에 따라 식각 속도는 증가하였으며, $Ar/Cl_2$ 플라즈마의 식각 속도가 $Cl_2$ 플라즈마의 식각 속도 보다 높았다. 식각 공정 변수의 변화에 의한 플라즈마 변수가 BLT 식각 속도에 미치는 영향을 관찰하기 위하여 LP(Lanmuir porbe)와 OES(optical emission spectroscopy)분석을 수행하였다. Ar 첨가량이 증감함에 따라 LP 분석에서 전자의 온도는 증가하였으나 전자밀도는 감소하였다. 이는 Ar의 이온화 준위가 Cl 보다 높기 때문에 이온화 윷이 낮아지기 때문으로 판단된다, 또한, OES 분석에서 Ar 첨가량이 증가함에 따라 Cl 원자의 부피 밀도는 감소하였다. Ar 첨가에 의한 BLT 박막의 식각 속도의 변화와 LP 및 OES 분석을 고려하면, BLT 박막은 화학적 식각의 도움을 받는 무리적 식각에 의하여 식각됨을 확인하였다,

• Applied Chemistry for Engineering
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• v.33 no.2
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• pp.202-209
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• 2022

Effects of the support and amount of NiCl₂ on ammonia adsorption capacity were investigated to improve the ammonia adsorption performance. NiCl₂ was impregnated onto the surface of various supports under ultrasonic irradiation. The physicochemical properties and ammonia adsorption performance of NiCl₂-impregnated adsorbents were investigated. Among the various supports, it was found that the adsorption capacity of ammonia was the best when NiCl₂ was impregnated on activated carbon (AC) with the highest specific surface area. As a result of changing the amount of NiCl₂ impregnated on AC, the NiCl₂(2.0)/AC adsorbent impregnated with 2 mmol·g^-1 of NiCl₂ showed the highest ammonia adsorption capacity of 5.977 mmol·g^-1. In addition, the adsorption capacity was found to be maintained at an almost constant level in five repeated cycle tests under the condition that low-temperature heat could be utilized. This indicates that the adsorbent has excellent regeneration ability.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.988-993
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• 2008

The characteristics of NO oxidation using sodium chlorite ($NaClO_2$) powder have been investigated by a flow type packed-bed reactor, where the reaction temperature and the space velocity are varied in the range of $20{\sim}230^{\circ}C$ and $0.4-2.2{\times}10^5hr^{-1}$, respectively, and the simulation gas mixtures are composed of NO (0~200 ppm), $NO_2$ (0-200 ppm), $O_2$ (0~15%) and $H_2O$ (0~15%) within $N_2$ balance. It has been found that the oxidation efficiency of NO depends greatly on the reaction temperature, exhibiting the existence of critical reaction temperature at about $170^{\circ}C$ where the oxidation efficiency of NO is maximized and then abruptly decreased with further increase of reaction temperature, resulting in being negligible over $190^{\circ}C$. Such a behavior in the oxidation efficiency has been originated from the phase transition of $NaClO_2$ at about $170^{\circ}C$ to form $NaClO_3$, and NaCl which are chemically inactive toward the oxidation of NO. The chemical reaction of NO with $NaClO_2$ has been observed to produce $NO_2$, ClNO and $ClNO_2$, whereas that of $NO_2$ only OClO species. Additionally, we have also observed that the introduction of $O_2$ and $H_2O$ has little influence on the oxidation of NO.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.72-74
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• 2004

In this study, we used a inductively coupled plasma (ICP) source for etching $Al_2O_3$ thin films because of its high plasma density, low process pressure and easy control bias power. $Al_2O_3$ thin films were etched using $Cl_2/BCl_3$, $N_2/Cl_2/BCl_3$, and Ar/$Cl_2/BCl_3$ plasma. The experiments were carried out measuring the etch rates and the selectivities of $Al_2O_3$ to $SiO_2$ as a function of gas mixing ratio, rf power, and chamber pressure. When $Cl_2$ 50% was added to $Cl_2/BCl_3$ plasma, the etch rate of the $Al_2O_3$ films was 118 nm/min. We also investigated the effect of gas addition. In case of $N_2$ addition, the etch rate of the $Al_2O_3$ films decreased while $N_2$ was added into $Cl_2/BCl_3$ plasma. However, the etch rate increased slightly as Ar added into $Cl_2/BCl_3$ plasma, and then further increase of Ar decreased the etch rate. The maximum etch rate was 130 nm/min at Ar 20% in $Cl_2/BCl_3$ plasma, and the highest etch selectivity was 0.81 in $N_2$ 20% in $Cl_2/BCl_3$ plasma. And, we obtained the results that the etch rate increases as rf power increases and chamber pressure decreases. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES).

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.9 no.2
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• pp.163-170
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• 1997

Solubility on $(LiBr+CaCl_2)$ in water has been measured systematically and compared with those of pure LiBr. It has been observed that there exists optimum value of $CaCl_2(LiBr+CaCl_2)$ in solubility when total$(LiBr+CaCl_2)$ concentration is higher than 57wt%. As total concentration increases up to 65wt%, it is found that the optimum value also increases monotonically. From the experimental results, a master plot has been constructed, with which optimum ratio of LiBr to $CaCl_2$ can be found in terms of total concentration. Vapor pressure of $H_2O/(LiBr+CaCl_2)$ solution with optimum contents of $CaCl_2$ has been observed to be changed negligibly at relatiely low temperature. However, as temperature increases, it is found that increasement in vapor pressure is significant.

• The Korean Journal of Pharmacology
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• v.28 no.2
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• pp.201-212
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• 1992

Effect of exogenous taurine on HOCl, $NH_2Cl$ and other oxidants-induced degradation of hyaluronic acid was investigated. The scavenging action of taurine on HOCl, $NH_2Cl$ and other oxidants was examined. The antioxidant action of taurine was also compared with that of thiol compounds. Viscosity of hyaluronic acid was markedly decreased by HOCl and $NH_2Cl$ on a dose dependent fashion. The degradative effect of HOCl on hyaluronic acid was greater than that of $NH_2Cl$. Taurine effectively inhibited HOCl-and $NH_2Cl-induced$ degradation of hyaluronic acid in a dose dependent fashion. The degradative effect of HOCl was markedly inhibited by DMSO. $Fe^{2+}$ plus $H_2O_2-induced$ degradation of hyaluronic acid was inhibited by catalase and DMSO but not affected by taurine. The desradative action of xanthine and xanthine oxidase was effectively inhibited by SOD and catalase but not affected by taurine. HOCl was significantly decomposed by taurine, DMSO, GSH and MPG. Both absorbance of HOCl at 250 nm and absorbance of $NH_2Cl$ at 242 nm were significantly increased by the addition of taurine. Interaction of $NH_2Cl$ with GSH or MPG showed an initial peak absorbance, but these absorbances were gradually decreased with time. OH production in the presence of $Fe^{2+}$ and $H_2O_2$ was inhibited by catalase and DMSO but not affected by taurine. Taurine did not affect $^1O_2$ production by U.V. irradiation which is responsible for DABCO and DABA. GSH and MPG markedly inhibited the degradative action of HOCl. These results suggest that the protective action of taurine on oxidants-induced damages of tissue components, including degradation of hyaluronic acid may be attributable to both its scavenging action on HOCl and $NH_2Cl$ and the complex formation of taurine with HOCl or $NH_2Cl$ without scavenging action on oxygen free radicals. Sulfhydryl group of taurine appears to show partially a protective action on HOCl-and $NH_2Cl-induced$ degradation.

• Korean Journal of Agricultural Science
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• v.34 no.1
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• pp.37-46
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• 2007

This study was conducted to investigate the antler induction rate and production by artificial induction of antlerogenesis using $CaCl_2$ injection on both periosteum around area of horn development for the frontal bone of a female elk deer which do not have an antler. The results obtained from eleven deers for verifying effect of the female's antler induction on reproduction are as follows: The antler development induction by $CaCl_2$injection is higher on the treatments of 30 and 50% of $CaCl_2$ injection than those on the treatments of 15 %. The antler production is higher on the 30 % $CaCl_2$ injection than those of 15 and 50 % $CaCl_2$ injection. For 30 % $CaCl_2$ injection, the antler production is higher in 1.5 and 2.0 ml of % $CaCl_2$ injection than the other injection level. After the induction of antler development, the birth rate is not changed as of 75~100 %, while the regeneration rate of the antler which was not constant in approximately 45 % for five among eleven female deer. With these results, we assume that the injection concentration and amount of $CaCl_2$ injection are around 30 % and 1.5 and 2.0 ml level which can be not only most effective conditions for the antler induction rate and production, but also these conditions do not influence the reproduction during the period of the female elk's antler development induction.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.249-249
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• 1999

GaN과 같은 III-nitride 반도체 관한 식각 기술의 연구는 blue-emitting laser diode(LD)를 위한 경면(mirror facet)의 형성뿐만아니라 새로운 display 용도의 light emitting diodes (LED), 고온에서 작동되는 광전소자 제조 등에도 그 중요성이 증대되고 있다. 최근에는 III-nitride 물질의 높은 식각속도와 미려하고 수직한 식각형상을 이루기 위하여 ECR(Electron Cyclotron Resonance)이나 ICP(Inductively Coupled Plasma)와 같은 고밀도 플라즈마 식각과 CAIBE(Chemically assisted ion beam etching)를 이용한 연구가 진행되고 있다. 현재 제조되어 지고 있는 LED 및 LD와 같은 광소자의 구조의 대부분은 p-GaN/AlGaN/InGaN(Q.W)/AlGaN/n-GaN 와 같은 여러 층의 형태로 이루어져 있다. 이중 InGaN는 광소자나 전자소자의 특성에 영향을 주는 가장 중요한 부분으로써 현재까지 보고된 식각연구는 undoped GaN에 대부분 집중되고 있고 이에 비해 소자 특성에 핵심을 이루는 InGaN의 식각특성에 관한 연구는 미흡한 상황이다. 본 연구에서는 고밀도 플라즈마원인 ICP 장비를 이용하여 InGaN를 식각하였고, 식각에는 Cl2/CH4, Cl2/Ar 플라즈마를 사용하였다. InGaN의 식각특성에 영향을 미치는 플라즈마의 특성을 관찰하기 위하여 quadrupole mass spectrometry(QMS)와 optical emission spectroscopy(PES)를 사용하였다. 기판 온도는 5$0^{\circ}C$, 공정 압력은 5,Torr에서 30mTorr로 변화시켰고 inductive power는 200~800watt, bias voltage는 0~-200voltage로 변화시켰으며 식각마스크로는 SiO2를 patterning 하여 사용하였다. n-GaN, p-GaN 층 이외에 광소자 제조시 필수적인 InGaN 층을 100% Cl2로 식각한 경우에 InGaN의 식각속도가 GaN에 비해 매우 낮은 식각속도를 보였다. Cl2 gas에 소량의 CH4나 Ar gas를 첨가하는 경우와 공정압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%Ar 플라즈마에서 공정 압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%CHF3 와 Cl2/10%Ar 플라즈마에서 공정압력을 15mTorr로 감소시키는 경우 InGaN과 GaNrks의 선택적인 식각이 가능하였다. InGaN의 식각속도는 Cl2/Ar 플라즈마의 이온에 의한 Cl2/CHF3(CH4) 플라즈마에서의 CHx radical 형성에 의하여 증가하는 것으로 사료되어 진다.