• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.669-676
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• 1995

In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.778-783
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• 2000

Effects of the $Al_2$O$_3$surface protective layer, deposited on the SnO$_2$sensing layer by aerosol flame deposition (AFD) method, on the sensing properties of SnO$_2$thin film ags sensors were investigated.Effects of Pt doping to the $Al_2$O$_3$surface protective layer on the selectivity of CH$_4$ gas were also investigated. 0.3$\mu\textrm{m}$ thick SnO$_2$thin sensing layers on Pt electrodes were prepared by R.F. magnetron sputtering with R.F. power of 50 W, at working pressure of 4mTorr, and at 20$0^{\circ}C$ for 30 min. $Al_2$O$_3$surface protective layers on SnO$_2$layers were prepared by AFD using a diluted aluminum nitrade (Al(NO$_3$).9$H_2O$) solution. The sensitivity of CO gas in the SnO$_2$gas sensor with an $Al_2$O$_3$surface protective layer was significantly decreased. But that of CH$_4$gas remained almost same with pure SnO$_2$gas sensor. This result shows that the selectivity of CH$_4$gas is increased because of the $Al_2$O$_3$surface protective layer. In the case of SnO$_2$gas sensors with Pt-doped $Al_2$O$_3$surface protective layers, low sensing property to CO gas and high sensing property to CH$_4$were observed. This results in the increasing of selectivity of CH$_4$gas selectivity are discussed.

• Journal of Korean Society for Atmospheric Environment
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• v.31 no.6
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• pp.548-561
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• 2015

Atmospheric concentrations of polychlorinated dibezo-p-dioxins and furans (PCDD/Fs) were investigated at urban-residential (Group I: Suwon, Guri and Goyang), industrial (Group II: Ansan, Siheung and Bucheon), urban-rural mixed (Group III: Yangju, Pocheon and Dongducheon) and rural regions (Group IV: Yangpyeong) in Gyeonggi-do from February 2012 to November 2012 quarterly. The concentrations of PCDD/Fs ranged from 0.018 to $0.109pgTEQm^{-3}$ in Group I (mean value: $0.061pgTEQm^{-3}$), 0.059 to $0.367pgTEQm^{-3}$ in Group II (mean value: $0.179pgTEQm^{-3}$), 0.072 to $0.836pgTEQm^{-3}$ in Group III (mean value: $0.334pgTEQm^{-3}$) and 0.014 to $0.066pgTEQm^{-3}$ in Group IV (mean value: $0.034pgTEQm^{-3}$), respectively. In spite of the less PCDD/F emission sources than Group II (industrial regions), the level of PCDD/Fs in urban-rural mixed area showed the highest values with high fluctuation. It's likely that the Group III was affected by fugitive emissions such like biomass burning and unregulated open burning. The mean contribution of particle phase to total PCDD/F concentration was above 83% because most of PCDD/F congeners were partitioned into particle phase. We evaluated their gas-to-particles equilibriums with the regression between the particle-gas partition coefficient, $K_P(m^3{\mu}g^{-1})$ and corresponding subcooled liquid vapor pressure ($P_L$). The logarithm-$K_P$ of PCDD/Fs was poorly correlated with $P_L$ at low ambient temperature (below $10^{\circ}C$) and the slope (m) values for log-log plots of the $K_P$ vs. $P_L$ was steeper in the Group 2 and Group 3 than residential area. It implies that the slope values were likely influenced by both the direct emission source of PCDD/Fs and ambient temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.203-207
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• 2009

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.132-132
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• 2000

Cu는 Al에 비하여 낮은 저항(1.8 $\mu$$\Omega$-cm)과 높은 EM 저항성을 가지고 있어 미래의 고속 ULSI 배선물질로 그 중요성이 더욱 증가되고 있으며, 현재까지 많은 연구가 진행되고 있다. 따라서, 본 논문에서는 이러한 방법들을 고려하여 CVD Cu의 문제점인 낮은 성장률의 개선과 Cu 박막의 특성을 향상하고자 수소 플라즈마 공정을 이용하여 plasma 전처리가 초기 Cu 핵생성에 미치는 영향에 대하여 연구하였다. 본 실험에 사용된 장비는 Cu RPCVD/MOCVD이다. 초기 Cu 핵의 생성에 있어서의 수소 플라즈마의 효과를 조사하기 위하여 다음과 같은 3가지의 방법으로 행하였다. 첫 번째는 Cu 박막 형성에서 플라즈마를 사용하지 않은 방법, 두 번째는 플라즈마 전처리공정을 행한 뒤, Cu 박막 증착시 플라즈마는 사용하지 않은 방법, 세 번재는 플라즈마 전처리공저을 행한 뒤 Cu 증착시에도 플라즈마를 사용한 방법이다. 이 세가지 방법의 핵생성 차이를 분석하기 위해서 각각 10초, 20초, 40초 증착시킨 후 grain의 크기와 개수를 비교하였다. 또한 플라즈마의 power에 따른 Cu 핵생성율도 조사하였다. 수소 전처리동안 working pressure는 10분 동안 1 torr로 유지되었으며 substrate의 온도는 20$0^{\circ}C$, r.f.power는 100watt로 설정하였다. Cu RPCVD의 증착조건은 r.f.power는 10watt, substrate의 온도는 20$0^{\circ}C$, gas pressure는 1 torr, Ar carrier gas는 50sccm, hydrogen processing gas는 100sccm, bubbler 온도는 4$0^{\circ}C$, gas line의 온돈느 6$0^{\circ}C$, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다.