• Journal of Advanced Marine Engineering and Technology
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• v.38 no.6
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• pp.602-608
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• 2014

Hydrogen energy, a field of low-carbon substitute energy, can be produced by fossile fuel reforming and electrolysis of water etc. We developed 1kW class flat type reformer for PEM Fuel Cells. The PEMFC is highly sensitive to carbon monoxide because CO has detrimental effects on the performance of the fuel cell. Thus, reformed gas supplied to Fuel cell system, which maintained CO concentration below 10ppm. After applying optimum drive condition, reformed gas was measured with gas chromatography and could find out about each experimental condition of $H_2$ and CO concentration. As a results, The 1kW class plate type hydrogen generation system's optimum condition is A/F ratio ${\alpha}=1.3$, STR temperature 1023K, S/C ratio 3, and $PrOx1{\cdot}2$ 30cc/min. It turns out that installation of PrOx 2 stage is more efficient for reducing CO concentration.

• Membrane Journal
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• v.21 no.1
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• pp.22-29
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• 2011

During the maintenance, repair and replacement process of circuit breaker, $SF_6$ reacted with input air in arc discharge, which led to the production of by-product gases (eg, $N_2$, $O_2$, $CF_4$, $SO_2$, $H_2O$, HF, $SOF_2$, $CuF_2$, $WO_3$). Among these various by-product gases, $N_2$, $O_2$, $CF_4$ is major component. Therefore, the effective separation process is necessary to recycle the $SF_6$ gas from the mixture gas containing $N_2$, $O_2$, $CF_4$. In this study, the membrane separation process was applied to recycle the $SF_6$ gas from the mixture gas containing $N_2$, $O_2$, $CF_4$. The concentration of $SF_6$ gas in gas produced from the electric power industry is over than 90 vol%. Therefore, we made the simulated gas containing $N_2$, $O_2$, $CF_4$, $SF_6$ which the concentration of $SF_6$ gas is minimum 90 vol%. From the results of membrane separation process of $SF_6$ gas from $N_2$, $O_2$, $CF_4$ $SF_6$ mixture gases, PSF membrane shown the highest recovery efficiency 92.7%, in $25^{\circ}C$ and 150 cc/min of retentate flow rate. On the other hand, PC membrane shown the highest recovery efficiency 74.8%, in $45^{\circ}C$ and 150 cc/min of retentate flow rate. Also, the highest rejection rate of $N_2$, $O_2$, $CF_4$ is 80, 74 and 58.9% seperately in the same operation condition of highest recovery efficiency. From the results, we supposed the membrane separation process as the effective $SF_6$ separation and recycle process from the mixture gas containing $N_2$, $O_2$, $CF_4$, $SF_6$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.29-32
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• 1999

$GaF_3$ films were directly grown on p' and p-type GaAs(100) substrates using a $SF_6$ plasma discharge system. GaAs MIS(Meta1-Insulator-Semiconductor) capacitor was successfully fabricated for about 1 hour at temperature $290^{\circ}C$ using the as-grown $GaF_3$ films. The as-grown films on p'-GaAs exhibited a current density of less than 6.68 $\times$ $1O^{-9}$ A/$cm^2$ at a breakdown field of 500kV/cm and a refractive index of 2.0 ~ 2.3 at a wavelength of 632.8 nm. The dielectric constant was about 5 derived from 1 MHz capacitance-voltage (C-V) measurements. Dielectric dispersion of the fluoridated films on p'-GaAs measured ranged from 100 Hz to 10 MHz was not observed.

• Korean Journal of Optics and Photonics
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• v.3 no.3
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• pp.178-182
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• 1992

An air-cooled discharge-heated copper-vapor laser system with its inter-electrode distance of 45 cm has been developed by utilizing an alumina ceramic plasma tube of 1.6 cm in diameter and 50 cm in lengih. For operating the laser, a dc high voltage power supply with output rating of 6 kV and 500 mA, a resonant charging circuitry consisting partly of an 1.8 H inductor assembly and a 5 nF storage capacitor, and a thyratron driver operating up to 7 kHz have also been developed. The present laser system starts lasing at the tube temperature of about $1350^{\circ}C$ and an maximum average output power of 0.7 W has been obtained at 12 kV, 4.5 kHz. 50 mbar of Ne buffer gas pressure, and at the tube temperature of $1460^{\circ}C$.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2385-2391
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• 2018

This paper is devoted to detecting decomposition characteristics of Iodotrifluoromethane ($CF_3I$) under alternating current (AC) discharges or load current interruptions. The decomposition products are measured utilizing chromatography-mass spectroscopy. It is found that less than 1% $CF_3I$ gas decomposed after several interruptions at load current of 200 A or hundred times of AC discharges. However, under interruptions at a current of 400 A, more than 95% $CF_3I$ gas decomposed into carbon tetrafluoride ($CF_4$) and hexafluoroethane ($C_2F_6$). The equilibrium compositions based on Gibbs free energy minimization of $CF_3I$ was calculated to explain the decomposition mechanism.

• Asian-Australasian Journal of Animal Sciences
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• v.25 no.3
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• pp.325-334
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• 2012

The objective of this study was to determine the roughage to concentrate (R:C) ratio with rain tree pod meal (RPM) supplementation on in vitro fermentation using gas production technique. The experiment design was a 6${\times}$4 factorial arrangement in a CRD. Factor A was 6 levels of R:C ratio (100:0, 80:20, 60:40, 40:60, 20:80 and 0:100) and factor B was 4 levels of RPM (0, 4, 8 and 12 mg). It was found that gas kinetic, extent rate (c) was linearly increased (p<0.01) with an increasing level of concentrate while cumulative gas production (96 h) was higher in R:C of 40:60. In addition, interaction of R:C ratio and RPM level affected $NH_3-N$ and IVDMD and were highest in R:C of 0:100 with 0, 4 mg of RPM and 40:60 with 8 mg of RPM, respectively. Moreover, interaction of R:C ratio and RPM level significantly increased total volatile fatty acids and propionate concentration whereas lower acetate, acetate to propionate ratios and $CH_4$ production in R:C of 20:80 with 8 mg of RPM. Moreover, the two factors, R:C ratio and RPM level influenced the protozoal population and the percentage of methanogens in the total bacteria population. In addition, the use of real-time PCR found that a high level of concentrate in the diet remarkably decreased three cellulolytic bacteria numbers (F. succinogenes, R. flavefaciens and R. albus). Based on this study, it is suggested that the ratio of R:C at 40:60 and RPM level at 12 mg could improve ruminal fluid fermentation in terms of reducing fermentation losses, thus improving VFA profiles and ruminal ecology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Clean Technology
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• v.17 no.3
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• pp.250-258
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• 2011

Thermal plasma has been presented for the decomposition of perfluorocompounds (PFCs) which are extensively used in the semiconductor manufacturing and display industry. We developed pilot-scale equipment to investigate the large scale treatment of PFCs and called it a "thermal plasma scrubber". PFCs such as $CF_4$, $C_2F_6$, $SF_6$, and $NF_3$ used in experiments were diluted with $N_2$. There were two different types of experiment setup related to the water spray direction inside the thermal plasma scrubber. The first type was that the water was sprayed directly into the gas outlet located at the exit of the reaction section. The second type was that the water was sprayed on the wall of the quenching section. More effective decomposition took place when the water was sprayed on the quenching section wall. For $C_2F_6$, $SF_6$, and $NF_3$ the maximum destruction and removal efficiency was nearly 100%, and for $CF_4$ was up to 93%.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.63-67
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• 2001

Up to now, most studies about Pt-etching have been focused on physical sputtering mechanism with Cl-based plasma, while only a limited results are available for etching characteristics with fluorine-based plasma. In this study, etch characteristics of Pt thin film with $Cl_2$/Ar and $SF_{6}$/Ar Ar gas chemistries have been studied with ECR plasma etching system. It is confirmed that $SF_{6}$/Ar Ar plasma chemistry could make volatile etch-products through the reaction with Pt thin film. Also the improvement in etch rate, etch profile and surface roughness is obtained due to the formation of volatile platinum fluoride compounds.