• 한국진공학회지
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• 제1권1호
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• pp.145-152
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• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• Journal of Electrical Engineering and Technology
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• 제13권6호
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• pp.2545-2552
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• 2018

$SF_6$ has been widely used in high voltage power equipment, such as gas insulated switchgear (GIS) and gas insulated transmission line (GIL), because of its excellent insulation and arc extinguishing performance. However, $SF_6$ faces two environmental problems: greenhouse effect and high liquefaction temperature. Therefore, to find the $SF_6$ substitute gases has become a research hotspot in recent years. In this paper, the liquefaction characteristics of $SF_6$ substitute gases were studied. Peng-Robinson equation of state with the van der Waals mixing rule (PR-vdW model) was used to calculate the dew point temperature of the binary gas mixtures, with $SF_6$, $C_3F_8$, $c-C_4F_8$, $CF_3I$ or $C_4F_7N$ as the insulating gas and $N_2$ or $CO_2$ as the buffer gas. The sequence of the dew point temperatures of the binary gas mixtures under the same pressure and composition ratio was obtained. $SF_6/N_2$ < $SF_6/CO_2$ < $C_3F_8/N_2$ < $C_3F_8/CO_2$ < $CF_3I/N_2$ < $CF_3I/CO_2$ < $c-C_4F_8/N_2$ < $C_4F_7N/N_2$ < $c-C_4F_8/CO_2$ < $C_4F_7N/CO_2$. $SF_6/N_2$ gas mixture showed the best temperature adaptability and $C_4F_7N/CO_2$ gas mixture showed the worst temperature adaptability. Furthermore, the dew point temperatures of the $SF_6$ substitute gases at different pressures and the upper limits of the insulating gas mole fraction at $-30^{\circ}C$, $-20^{\circ}C$ and $-10^{\circ}C$ were obtained. The results would supply sufficient data support for GIS/GIL operators and researchers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• 한국진공학회지
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• 제21권4호
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• pp.199-204
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• 2012

$SF_6$ 가스는 반도체 및 디스플레이 제조공정 중 건식식각 공정에서 널리 사용되는 가스이다. 하지만 $SF_6$ 가스는 대표적인 온실가스로서 지구 온난화에 큰 영향을 끼치기 때문에 반도체 및 디스플레이 공정에서 $SF_6$ 가스를 대체할 수 있는 가스의 연구가 필요한 상황이다. 그 후보군으로 떠오르고 있는 가스 중의 하나가 바로 $C_3F_6$ 가스이다. 이 가스를 이용하여 $Si_3N_4$ 박막을 건식식각 방법인 Reactive Ion Etching 공정을 수행하여 식각 특성에 관하여 연구하였으며, 흡착제 Zeolite 5A를 이용하여 식각공정 중 배출되는 가스 성분을 감소시켰다. Plasma Enhanced Chemical Vapor Deposition 장비를 이용하여 500 nm 두께의$Si_3N_4$ 박막을 증착하였으며, 노광 공정을 통해 패터닝을 한 후 Reactive Ion Etching 공정을 수행하였다. 그리고 Scanning Electron Microscope 장비를 이용하여 $Si_3N_4$ 박막의 식각된 단면과 식각율을 확인하였다. 또한 공정 후 흡착제 Zeolite 5A를 통과하기 전과 후에 배출되는 가스를 포집하여 Gas Chromatograph-Mass Spectrophotometry 장비를 이용하여 가스 성분을 측정 및 비교하였다.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.305-310
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• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.27.2-27.2
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• 2006

• 한국표면공학회지
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• 제34권5호
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• pp.403-408
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• 2001

In this work, the cyclic perfluorinated ether (c-C$_4$F$_{8}$O) with very high destructive removal efficiency (DRE) than other alternative gases, such as $C_3$F$_{8}$, c-C$_4$F$_{8}$ and NF$_3$ was used as an alternative process chemical. The plasma cleaning of silicon nitride using gas mixtures of c-C$_4$F$_{8}$O/O$_2$ and c-C$_4$F$_{8}$O/O$_2$+ $N_2$ was investigated in order to evaluate the effects of adding $N_2$ to c-C$_4$F$_{8}$O/O$_2$ on the global warming effects. Under optimum condition, the emitted net perfluorocompounds (PFCs) during cleaning of silicon nitride were quantified and then the effects of additive $N_2$ by obtaining the destructive removal efficiency (DRE) and the million metric tons of carbon equivalent (MMT-CE) were calculated. DRE and MMTCE were obtained by evaluating the volumetric emission using. Fourier transform-infrared spectroscopy (FT-IR). During the cleaning using c-C$_4$F$_{8}$O/O$_2$+$N_2$, DRE values as high as (equation omitted) 98% were obtained and MMTCE values were reduced by as high as 70% compared to the case of $C_2$F$_{6}$O$_2$. Recombination characteristics were indirectly investigated by combining the measurements of species in the chamber using optical emission spectroscopy (OES), before and after the cleaning, in order to understand any correlation between plasma and emission characteristics as well as cleaning rate of silicon nitride.silicon nitride.

• 한국광학회지
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• 제6권3호
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• pp.214-221
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• 1995

레이저매질의 넓은 압력범위(0.5-3.5 기압)에 대해 70ns[FWHM]의 전자빔 가속기(800kV, 21kA)로 여기할 때 free-running XeF$(C\rightarrowA$ 엑시머 레이저의 출력과 Xe 농도와의 상호관계를 조사하였다. 공진기를 쌍색성의 출력거울로 구성하고, 레이저 출력을 레이저매질 $(Xe/F_2/Ar)$의 총압력과 가스혼합비의 함수로써 최적화 하였다. $F_2$ 0.46%를 고정한 조건에서 레이저 고유효율은 총압력 1, 2, 3기압에서 최대 0.38%, 1.03%, 0.29%로 측정되었다. 이때 레이저의 최대 고유효율은 레이저매질의 총압력이 낮을수록 높은 Xe 농도에서 높게 나타났다. 이같은 상호관계를 $XeF^*(C)$의 형성효율 및 XeF$(C\rightarrowA$ 레이저 추출 효율에 대해 동력학적으로 해석하므로써 Xe 농도의 의존성을 설명하였다. 그 결과로 대기압 XeF$(C\rightarrowA$ 레이저의 효율적인 동작을 제안한다.

• 한국표면공학회지
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• 제44권2호
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• pp.50-54
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• 2011

Hydrophobic a-C:F film was coated on polycarbonate film with $CF_4$, $C_2F_6$ and HFC ($C_2F_4H_2$) gas in helium discharge generated by 5~100 kHz AC power supply at atmospheric pressure and room temperature. The highest water contact angle of the a-C:F film formed with $He/C_2F_6$ mixed gas is $155^{\circ}$. X-ray photoelectron spectrum showed that there was 40% of C-$CF_3$ bond at the surface of the super hydrophobic film. The contact angle and deposition rate were decreased with increasing substrate temperature. The contact angle was generally increased with the surface roughness of the film. The contact angle was high when the surface microstructure of the film was fine and sharp at the similar roughness and chemical composition of the surface.