• Journal of the Korean Applied Science and Technology
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• v.35 no.3
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• pp.595-605
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• 2018

In recent years, researches on organic-inorganic coating films have conducted a nanocomposite system composed of organic resin matrices having excellent flexibility and chemical stability and inorganic materials having excellent mechanical properties. The o-phenylphenoxyethyl acrylate (OPPEA) used as the acrylate monomer has a high refractive index of 1.58, and the bisphenol A ethoxylate diacrylate (BAEDA) has a low refractive index but improves the chemical stability of the organic resin. In addition, zirconia used as an inorganic material exhibits excellent durability and optical properties. In this study, the BAEDA contents in acrylate monomer were controlled to produce a film with suitable optical transparency. And optimum conditions were established by comparing the changes in surface properties of PET films detected with pencil hardness tester, Abbe's refractometer, and UV-vis spectrophotometer. The hydrophobicity and the dispersibility of zirconia in acrylate monomer were much improved after modification with ${\gamma}$-methacryloxypropyltrimethoxysilane (MPS), which is a silane coupling agent. And the existence of ester C=O bond peak at $1716cm^{-1}$ introduced by MPS through FT-IR ATR spectrophotometer confirmed the completion of surface modification of zirconia with MPS. In addition, the presence of silicon atom on the surface modified zirconia was also proved using X-ray fluorescence spectrometer. When the photocurable hybrid coating was prepared by introducing chemically modified zirconia into acrylate monomer, the refractive index of this coated PET film was improved by 1.2%, compared to the only acrylate coated PET film. The homogeneous distribution of zirconia in acrylate coating layer on PET film was also identified through SEM/EDS mapping analysis technique.

• Journal of Life Science
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• v.19 no.1
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• pp.9-14
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• 2009

The prostate cancer is the critical health problem, increasing of its related death in worldwide. Unfortunately present surgery and chemotherapeutic choices seem to be impossible in curing or controlling prostate cancer, because metastasis occasionally advances even after these potentially curative therapies. Therefore, there is immediate need to alternative chemoprevention and chemotherapeutic agents. Over one hundred species of dried medicinal herbs were tested for proliferation inhibitory effects on prostate cancer cell line, PC-3. One of them, Anthriscus sylvestris was selected because of potent anti-proliferation effect. The dried root of A. sylvestris was extracted with 100% methanol for 2-3 days and its extract was fractionated by using ethyl acetate. And ethyl acetate layer was subjected to column chromatographies on silica gel, reverse phase-18 (RP-18) and Sephadex LH-20, in turn. Finally, the pure compound was obtained by crystallization in methanol at $4^{\circ}C$ for overnight and identified as deoxypodophyllotoxin by NMR spedorscopic and physico-chemical analyses. In addition, it was confirmed that deoxypodophyllotoxin clearly inhibits the proliferation of PC-3 cells in a dose and time-dependent manner.

• Journal of Biosystems Engineering
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• v.40 no.4
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• pp.409-416
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• 2015

Purpose: This study evaluates a new banana bulk packaging method under the real transport conditions of Sri Lanka. Methods: A field evaluation of optimized 8-mm thick Styrofoam sheets used as the cushioning material was applied. A trial transport was conducted from Thambuttegama to Colombo using a medium-sized open truck, with banana leaves as the control material. Data were recorded at the farmer, transporter, retailer, and consumer stages of the supply chain. Mechanical damage, physiological loss in weight, fruit firmness, total soluble solids, ripeness index, visual quality ratings, and the physical damage index of the bananas were measured at each stage. A cost-benefit analysis was also conducted for both packaging methods. Results: The 8-mm styrofoam sheets significantly reduced (p < 0.05) the mechanical damage from 26.3% to 12.9% compared to the conventional method for long-distance transport, and the physiological loss in weight showed a decrease of 2.88%. The loss of firmness of the fruits followed a simmilar pattern for both methods until reaching the retailer, but at the consumer was significantly higher (p < 0.05) for the control. However, the physical damage index at the retail stage for the control showed symptoms of physical injury, whereas the bananas transported using the cushioning materials exhibited only minor symptoms. Further, the visual quality of the fruits after transport from the farmer to the consumer was preserved, which is one of the main factors affecting consumer preference and retail price. The proposed method increases the profit margin by 51.2% for Embul bananas owing to the reduced postharvest losses. Conclusion: The 8-mm thick Styrofoam sheets reduced the physical damage to the bananas, with the quality parameters maintained at the prefered level. Moreover, profits may be increased.

• Microbiology and Biotechnology Letters
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• v.17 no.2
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• pp.94-99
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• 1989

Seven gtrains of Lactobacillus produce bacteriocin being active for Lacidophilus. All strains producing bacteriocin were found to be L. acidophilus except with one strain of L. gasseri. The maximum activity of bacteriocin produced by Lactobacillus strains was obtained at a middle or late stage of the log phase, or a early stage of the stationary phase. After the maximum was reached, however, the activity was rapidly decreased. The bacteriocins were inactivated easily by the treatment with proteolytic enzymes but not with nucleolytic enzymes, suggesting that the bacteriocin was proteinaceous. The bacteriocins were different from the other previously reported lactobacillus bacteriocin in their flexibility to the treatment at 10$0^{\circ}C$. Bacteriocins of L. acidophilus ATCC 9857 and 4357 decreased in activity by the treatment with diethylether, presumably the bacteriocin contained of a lipid component. It sums likely that L. acidophilus A4 bacteriocin adsorb to a regularly arrayed layer of the cell wall.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.2A
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• pp.188-194
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• 2007

In order to become ubiquitous world, the compatibility of wireless machines has become the significant characteristic of a communication terminal. Thus, SDR is the most necessary technology and standard. However, among the environment which has different communication protocol, it's difficult to make a terminal with only hardware using ASIC or SoC. This paper suggests the processor that can accelerate several communication protocol. It can be connected with main-processor, and it is specialized PHY layer of network The C-program that is modeled with the wireless protocol IEEE802.11a and IEEE802.11b which are based on widely used modulation way; OFDM and CDM is compiled with ARM cross compiler and done simulation and profiling with Simplescalar-Arm version. The result of profiling, most operations were Viterbi operations and complex floating point operations. According to this result we suggested a co-processor which can accelerate Viterbi operations and complex floating point operations and added instructions. These instructions are simulated with Simplescalar-Arm version. The result of this simulation, comparing with computing only one ARM core, the operations of Viterbi improved as fast as 4.5 times. And the operations of complex floating point improved as fast as twice. The operations of IEEE802.11a are 3 times faster, and the operations of IEEE802.11b are 1.5 times faster.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

• Magazine of the Korean Society of Agricultural Engineers
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• v.15 no.1
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• pp.2913-2924
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• 1973

This study was to investigate the drying mechanism of stratified soil by investigating 'effects of the upper soil on moisture loss of the lower soil and vice versa' and at the same time by examining how the drying progressed in the stratified soils with bare surface and with vegetated surface respectively. There were six plots of the stratified soils with bare surface($A_1- A_6$ plot) and the same other six plots($B_1- B_5$ plot), with vegetated surface(white clover). These six plots were made by permutating two kinds of soils from three kinds of soils; clay loam(CL). Sandy loam(SL). Sand(s). Each layer was leveled by saturating sufficient water. Depth of each plot was 40cm by making each layer 20cm deep and its area. $90{\times}90(cm^2)$. The cell was put at the point of the central and mid-depth of the each layer in the each plot in order to measure the soil moisture by using OHMMETER. soil moisture tester, and movement of soil water from out sides was cut off by putting the vinyl on the four sides. The results obtained were as follow; 1. Drying progressed from the surface layer to the lower layer regardless of plots. There was a tendency thet drying of the upper soil was faster than that of the lower soil and drying of the plot with vegetated surface was also faster than that of the plot with bare surface. 2. Soil moisture was recovered at approximately the field capacity or moisture equivalent by infiltration in the course of drying, when there was a rainfall. 3. Effects of soil texture of the lower soil on dryness of the upper soil in the stratified soil were explained as follows; a) When the lower soil was S and the upper, CL or SL, dryness of the upper soils overlying the lower soil of S was much faster than that overlying the lower soil of SL or CL, because sandy soil, having the small field capacity value and playing a part of the layer cutting off to some extent capillary water supply. Drying of SL was remarkably faster than that of CL in the upper soil. b) When the lower soil was SL and the upper S or CL, drying of the upper soil was the slowest because of the lower SL, having a comparatively large field capacity value. Drying of CL tended to be faster than that of S in the upper soil. c) When the lower soil was CL and the upper S or SL, drying of the upper soil was relatively fast because of the lower CL, having the largest field capacity value but the slowest capillary conductivity. Drying of SL tended to be faster than that of S in the upper soil. 4. According to a change in soil moisture content of the upper soil and the lower soil during a day there was a tendency that soil moisture contents of CL and SL in the upper soil were decreased to its minimum value but that of S increased to its maximum value, during 3 hours between 12.00 and 15.00. There was another tendency that soil moisture contents of CL, SL and S in the lower soil were all slightly decreased by temperature rising and those in a cloudy day were smaller than those in a clear day. 5. The ratio of the accumulated soil moisture consumption to the accumulated guage evaporation in the plot with vegetated surface was generally larger than that in the plot with bare surface. The ratio tended to decrease in the course of time, and also there was a tendency that it mainly depended on the texture of the upper soil at the first period and the texture of the lower soil at the last period. 6. A change in the ratio of the accumulated soil moisture consumption was larger in the lower soil of SL than in the lower soil of S. when the upper soil was CL and the lower, SL and S. The ratio showed the biggest figure among any other plots, and the ratio in the lower soil plot of CL indicated sligtly bigger than that in the lower soil plot of S, when the upper soil was SL and the lower, CL and S. The ratio showed less figure than that of two cases above mentioned, when the upper soil was S and the lower CL and SL and that in the lower soil plot of CL indicated a less ratio than that in the lower soil plot of SL. As a result of this experiments, the various soil layers wero arranged in the following order with regard to the ratio of the accumulated soil moisture consumption: SL/CL>SL/S>CL/SL>CL/S$\fallingdotseq$S/SL>S/CL.

• Solar Energy
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• v.17 no.4
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• pp.3-11
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• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.1014-1019
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• 1999

Copolyamic acid PMDA/6FDA-PDA(PAA) and homopolyamic acids PMDA-PDA(PAA) and 6FDA-PDA(PAA) were synthesized from 1,2,4,5-benzenetetracarboxylic dianhydride(PMDA) and 2,2'-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride(6FDA) as the dianhydride and 1,4-phenylenediamine (PDA) as the diamine. Residual stresses were detected in-situ during thermal imidization of the co- and homopolyimide precursors as a function of processing temperature over the range of $25{\sim}400^{\circ}C$ using thin film stress analyzer(TFSA), and morphological structures were investigated by WAXD. In comparison, the resultant residual stress of polyimide films composed of different compositions decreased with the increasing content of PMDA unit in the chain and was about 5 Mpa in compression mode for PMDA-PDA. In this study, the synthesis of random PMDA/6FDA-PDA copolyimide could be completed and compensate for the difficulty of process due to high $T_g$ of PMDA-PDA and relatively higher stress of 6FDA-PDA. It showed that we can make a low level stress copolyimied having excellent mechanical properties by incorporating appropriate rod-like rigid structure PMDA-PDA unit into 6FDA-PDA polyimide backbone which generally shows higher stress due to rotational hinges such as bulky di(trifluoromethyl). Specially, PMDA/6FDA-PDA(0.9:0.1:1.0) satisfied excellent mechanical property and low level stress as an inter layer showing low dielectric constant.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.