• Journal of Korea Foundry Society
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• v.2 no.3
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• pp.2-15
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• 1982

In this study, the influenced of graphite shape on the boriding of cast iron and boride structure was investigated. Gray cast iron, ferritic and pearlitic ductile cast iron were borided at 750,850,900 and $950^{\circ}C$ for 1,3 and 5 hours by powder pack method with the mixture of $B_4C_9\;Na_2B_4O_7$, $KBF_4$ and Shc. The boride layer was consisted of FeB(little), $Fe_2B$ (main) and graphite. Some possibility of the existence of unknown Fe-B-C compound in the boride layer was suggested. And precipitates in the diffusion zone was $Fe_3(B,C)$. The concentration of Si and precipitation of $Fe_3(B,C)$ in the ${\alpha}$ layer raised the hardness of this Zone. The depth and hardness of boride layer increased with the increase of treating temperature and tim. But high temperature (over $950^{\circ}C)$ caused pore at graphite position and long treating time (5hrs) sometimes caused formation of graphite layer beneath the boride layer. So, for the practical application of borided cast iron, treating in short time and at low temperature was recommended. And for ductile cast iron, ferritizing or pearlitizing heat treatment was seemmed to be possible at the same time with boriding. The graphite in the boride layer was deeply concerned with the qualitx and characteristics of the boride layer. And it greatly influenced on the shape of the boride phase, structure of the boride layer. Generally speaking, the existance of graphite restrained the growth of the boride phase. But the boundary between the gsaphite and the matrix acted as the shortcut of boron diffusion. So, for gray cast iron, the graphite layed length-wise led the formation of boride layer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1079-1082
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• 2004

CuPc와 ZnPc를 이용하여 이종 접합 구조에서의 광기전 특성을 연구하였다. $CuPc/C_{60}$, $XnPc/C_{60}$의 이종 접합 구조에서 $C_{60}$의 접합 두께 비율을 1:1 (20nm:20nm), 1:2 (20nm:40nm), 1:3 (20nm:60nm)로 가변하여 두께와 물질에 따른 광기전 특성 및 엑시톤 억제층의 효과를 분석하였다. 광원은 500W Xe lamp를 이용하였으며, 광원의 세기는 보정된 radiometer/photometer와 Si-photodiode로 dark, 10, 25, 60, 80 그리고 100mW/$cm^2$로 주사하였다.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Korean Journal of Materials Research
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• v.23 no.2
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• pp.123-127
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• 2013

The electrolytic reduction of a spent oxide fuel involves liberation of the oxygen in a molten LiCl electrolyte, which is a chemically aggressive environment that is too crosive for typical structural materials. Therefore, it is essential to choose the optimum material for the process equipment for handling a molten salt. In this study, the corrosion behavior of pyro-carbon made by CVD was investigated in a molten LiCl-$Li_2O$ salt under an oxidation atmosphere at $650^{\circ}C$ and $750^{\circ}C$ for 72 hours. Pyro-carbon showed no chemical reactions with the molten salt because of its low wettability between pyro-carbon and the molten salt. As a result of XRD analysis, pyro-carbon exposed to the molten salt showed pure graphite after corrosion tests. As a result of TGA, whereas the coated layer by CVD showed high anti-oxidation, the non-coated layer showed relatively low anti-oxidation. The stable phases in the reactions were $C_{(S)}$, $Li_2CO_{3(S)}$, $LiCl_{(l)}$, $Li_2O$ at $650^{\circ}C$ and $C_{(S)}$, $LiCl_{(l)}$, $Li_2O_{(S)}$ at $750^{\circ}C$. $Li_2CO_{(S)}$ was decomposed at $750^{\circ}C$ into $Li_2O_{(S)}$ and $CO_{2(g)}$.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.146.4-146
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• 1998

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.371-380
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• 2004

In the dust separation by using porous filter media, the structure of dust layer deposited on the filter surface of filter medium directly affects the effective filtration. The present study has investigated the specific resistance (K$_2$') of the dust layer and its porosity ($\varepsilon$$_{c}$) for three different filters; FA composite filter, metal fiber filter and stainless filter. The specific resistance (K$_2$') increased and at the same time the cake porosity ($\varepsilon$$_{c}$) decreased with the increase of filtration velocity, possibly due to the compressible effect of dust layer. However, under the low dust concentration, subsequent dust particles would block the open channels through the layer resulting in high specific resistance of the layer. The FA composite filter among three filters was shown to be the most effective filter for dust cake filtration at low filtration velocities less than 0.1 m/s for an approximate dust concentration of 5 g/㎥.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.21-26
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• 2004

Deposition condition of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films on moving IBAD templates (CeO$_2$/IBAD-YSZ/SS) was studied in a hot-wall type metal organic chemical vapor deposition (MOCVD) process using single liquid source. The reel velocity was 40 cm/hr and the source mole ratios of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$ were 1:2.3:3.1 and 1:2.1:2,9, Two different types of IBAD templates with thin CeO$_2$ and thick CeO$_2$ layers were used, The YBCO films were successfully deposited at the deposition temperatures of 780~89$0^{\circ}C$ ; the a-axis growth was observed together with the c-axis growth up to 83$0^{\circ}C$. while the c-axis growth became dominant above 83$0^{\circ}C$. The top surface of the c-axis film was fairly dense and included a small amount of the a-axis growth, although the peaks of the a-axis grains were not observed in XRD pattern, The YBCO film deposited on IBAD template with thin CeO$_2$ layer showed low critical current of 2.5 A/cm-width. while the YBCO film deposited on IBAD template with thick CeO$_2$ layer showed higher critical current of 50 A/cm-width. This result indicates that thick CeO$_2$ layer is thermally more stable than thin CeO$_2$ layer at the high deposition temperature of the MOCVD process.s.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.52-59
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• 1998

The ZnS:Mn thin film electroluminescent(TFEL) devices fabricated by ALE system were investigated. Yellow-orange light emission was observed when the applied voltage exceeded 134 V and luminance increased sharply as the applied voltage increased. Luminance of 568 Cd/c $m^{2}$ was obtained under 1 KHz sinusoidal voltage wave application at the peak applied voltage of 230 V. The peak wavelength of the emissionwas 577 nm. The C-V, Q-V, $Q_{t}$ - $F_{p}$ , L- $Q_{cond}$, and V- $Q_{pol}$ have been measured under theapplication of the trapezoidal wave with its pulse width varying 0 to 75 .mu.sec. The phoshor and the insulator capacitance of the TFEL device under test were 24.3 nF/c $m^{2}$ and 9 nF/c $m^{2}$, respectively. It was observed that the threshold voltage changed from 137V to 100V as the pulse width varied from 0 to 75 .mu.sec. The L- $Q_{cond}$ characteristics showed that the light emission increased in proportion to the $Q_{cond}$. The luminance increased from 386 Cd/ $m^{2}$ to 607 Cd/ $m^{2}$ when the $Q^{+}$$_{cond}$ increased from 1.3 .mu.C/c $m^{2}$ to 2.3 .mu.C/c $m^{2}$. The V- $Q_{pol}$ characteristics showed that the V was inversely proportional to $Q_{pol}$./. th/ was inversely proportional to $Q_{pol}$./. pol/./.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.