• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.388-393
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• 2020

In this study, a PbS quantum dots (QDs)-based H₂ gas sensor with a Pd electrode was proposed. QDs have a size of several nanometers, and they can exhibit a high surface area when forming a thin film. In particular, the NH₂ present in the ligand of PbS QDs and H₂ gas are combined to form NH₃⁺, subsequently the electrical characteristics of the QDs change. In addition to the resistance change owing to the reaction between Pd and H₂ gas, the resistance change owing to the reaction between the NH₂ of PbS QDs and H₂ gas increases the current signal at the sensor output, which can produce a high output signal for the same concentration of H₂ gas. Using the XRD and absorbance properties, the synthesis and particle size of the synthesized PbS QDs were analyzed. Using PbS QDs, the sensitivity was significantly improved by 44%. In addition, the proposed H₂ gas sensor has high selectivity because it has low reactivity with heterogeneous gases such as C₂H₂, CO₂, and CH₄.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.302-307
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• 2013

The Sb-doped $SnO_2$ nanowire network sensors were prepared by thermal evaporation of the mixtures between tin and antimony powders. Pure $SnO_2$ nanowire networks showed high sensor resistance in air ($99M{\Omega}$), similar gas responses to 4 diffferent gases (5 ppm $C_2H_5OH$, CO, $H_2$, and trimethylamine), and very sluggish recovery speed (90% recovery time > 800 s). In contrast, 2 wt% Sb-doped $SnO_2$ showed the selective detection toward $C_2H_5OH$ and trimethylamine, relatively low resistance ($176k{\Omega}$) for facile measurement, and ultrafast recovery speed (90% recovery times: 6 - 18 s). The change of gas sensing charactersitics by Sb doping was discussed in relation to gas sensing mechanism.

• Journal of the Korean institute of surface engineering
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• v.50 no.2
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• pp.125-130
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• 2017

ZnO nanowires were synthesized and annealed at various temperatures of $500-800^{\circ}C$ in oxygen atmosphere to investigate hydrogen gas sensing properties. The diameter and length of the synthesized ZnO nanowires were approximately 50-100 nm and a few $10s\;{\mu}m$, respectively. $H_2$ gas sensing performance of the ZnO nanowires sensor was measured with electrical resistance changes caused by $H_2$ gas with a concentration of 0.1-2.0%. The response of ZnO nanowires at room temperature to 2.0% $H_2$ gas is found to be two times enhanced by annealing process in $O_2$ atmosphere at $800^{\circ}C$. In the current study, the effect of heat treatment in $O_2$ atmosphere on the gas sensing performance of ZnO nanowires was studied. And the underlying mechanism for the sensing improvement of the ZnO nanowires was also discussed.

• Journal of the Korean Chemical Society
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• v.35 no.1
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• pp.38-45
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• 1991

The cytidine bio-sensors have been constructed by immobilizing the bacterium Proteus mirabilis and organelle on an ammonia gas sensor. The bacterial sensor was investigated for the effects of pH, temperature, buffer solution, bacterial amounts, interferences and lifetime. The bacterial sensor had linearity in the range of 5.0 ${\times}$ 10$^{-4}$M ∼ 1.0 ${times}$ 10$^{-2}$M cytidine with a slope of 56 mV/decade at pH 7.8, 30$^{\circ}C$ and 3 mg in 1.0 M phosphate buffer solution. This bacterial sensor was compared with it's organelle sensor.

• Journal of the Optical Society of Korea
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• v.2 no.1
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• pp.34-37
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• 1998

We present a novel method for the stabilization of the Sagnac current sensor with active twist control. The sensor output was improved more than 8 times by employing the proposed stabilization method. Stability within $\pm$1.7% was demonstrated between 36$^{\circ}C$ and 62$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.118-122
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• 1996

1wt% Pt/MoO$_3$ gas sensors for detecting H$_2$ gas were fabricated by the pressed pellet method and surface structures of Pt/MoO$_2$ were investigated by TEM and XRD. It was observed that as the calcination temperature is increased, the overlayers of MoO$_3$ on Pt are produced, but the Cl content in PtCl$\_$x/ are decreased. H$_2$ gas sensing properties in N$_2$ ambient and in air ambient were investigated, respectively, and Pt/MoO$_3$ had high sensitivity at low working temp ; 7.8% at 50$^{\circ}C$, 97.7% at 100$^{\circ}C$, 97.1% at 150$^{\circ}C$ when the specimens are treated at 400$^{\circ}C$, and 99.6% at 150$^{\circ}C$ when they are treated at 200$^{\circ}C$. It shows the development of a low-power type sensor is possible by using Pt/MoO$_3$.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.139-142
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• 1990

A gas sensor, comprised of both ZnO and $PdCl_2$ powders, has been developed to sense the CO gas of low concentration (100 ppm). When the weight ratio of ZnO/$PdCl_2$ element sintered at $600^{\circ}C$ was 99.5/0.5, the maximum sensitivity to CO gas was obtained at the operating temperature of $200^{\circ}C$. Also, the response characteristics of this element were examined, and then the response time was decreased from 90 to 45 sees, with operating temperature increase in the range of $100-400^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.57-65
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• 2003

In this study, we carry out reliability tests and investigate the failure mechanisms of the anodically bonded wafer level vacuum packaging (WLVP) MEMS gyroscope sensor. There are three failure mechanisms of WLVP: leakage, permeation and out-gassing. The leakage is caused by small dimension of the leak channel through the bonding interface and internal defects. The larger bonding width and the use of single crystalline silicon can reduce the leak rate. Silicon and glass wafer itself generates a large amount of outgassing including $H_2O$, $C_3H_5$, $CO_2$, and organic gases. Epi-poly wafer generates 10 times larger amount of outgassing than SOI wafer. The sandblasting process in the glass increases outgassing substantially. Outgassing can be minimized by pre-baking of the wafer in the vacuum oven before bonding process. An optimum pre-baking temperature of the wafers would be between $400^{\circ}C$ and $500^{\circ}C$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.367-368
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.310.2-310.2
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• 2007