• Title/Summary/Keyword: $CO_2$ leakage

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A Study on the Stability of ZnO-${Pr_6}{O_{11}}$-CoO-${Er_2}{O_3}$Based Varistors (ZnO-${Pr_6}{O_{11}}$-CoO-${Er_2}{O_3}$계 바리스터의 안정성에 관한 연구)

  • 남춘우
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.8
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    • pp.667-674
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    • 2000
  • The stability of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_3$based varistors was investigated with Er$_{2}$/O$_3$additive content of the range 0.0 to 2.0 mol%. All varistors sintered at 130$0^{\circ}C$ exhibited the thermal runaway within short times even under weak d.c. stress. As a result these varistors were completely degraded. On the contrary the stability of varistors sintered at 135$0^{\circ}C$ was far better than that of 130$0^{\circ}C$. In particular the varistors added with 0.5mol% Er$_{2}$/O$_3$ which the nonlinear exponent is 34.83 and the leakage current is 7.38 $mutextrm{A}$ showed a excellent stability which the variation rate of the varistors voltage the nonlinear coefficient and the leakage current is below 1%, 2%, and 3.5% respectively even under more severe d.c. stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$12h) Consequently it is estimated that the ZnO-0.5 mol% Pr$_{6}$/O sub 11/-1.0 mol% CoO-0.5 mol% Er$_{2}$/O sub 3/ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors having the high performance and stability in future. future.ure. future.

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Effects of Spinel on the Formation Process of Nonohmic ZnO Ceramics (비오옴 ZnO 세라믹스의 형성과정에서 스피넬의 영향)

  • 김경남;한상목
    • Journal of the Korean Ceramic Society
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    • v.29 no.2
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    • pp.101-106
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    • 1992
  • Sintering behavior, distribution of dopant oxides and electrical properties in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems were studied. The linear shrinkage of ZnO varistors from 850 to 950$^{\circ}C$ was related to the decomposition reaction (py\longrightarrowsp+Bi2O3) of the pyrochlore phase. In the distribution of the dopant oxides (CoO, Sb2O3, Cr2O3), Co distribute uniformly throughout the sample, the distribution of Sb coincided with small particles (spinel phase, Zn7Sb2O12), and Cr distributed very consistently with Sb. The increase in breakdown voltage, due to the addition of Cr2O3, was not only attributed to the decrease in the ZnO grain size but also to the solution of Cr2O3 in the spinel phase. The leakage current (80% V60 ${\mu}\textrm{A}$) was increased by the addition of Cr2O3.

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Voltage Enhancement of ZnO Oxide Varistors for Various Y2O3 Doping Compositions

  • Yoon, Jung-Rag;Lee, Chang-Bae;Lee, Kyung-Min;Lee, Heun-Young;Lee, Serk-Won
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.5
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    • pp.152-155
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    • 2009
  • The microstructure and the electrical properties of a ZnO varistor, which was composed of a ZnO-$Bi_2O_3$-$Sb_2O_3$-CoO- $MnO_2$ -NiO-$Nd_2O_3$ system, were investigated at various $Y_2O_3$ addition concentrations. $Y_2O_3$ played a role in the inhibition of the grain growth. As the $Y_2O_3$ content increased, the average grain size decreased from $6.8{\mu}m$ to $4{\mu}m$, and the varistor voltage($V_{1mA}$) greatly increased from 275 to 400 V/mm. The nonlinearity coefficient ($\alpha$) decreased from 72 to 65 with increasing $Y_2O_3$ amount. On the other hand, the leakage current ($I_L$) increased from 0.2 to 0.9 ${\mu}A$. These results confirmed that doping the varistors with $Y_2O_3$ is a promising production route for production of a higher fine-grained varistor voltage ($V_{1mA}$) which can dramatically reduce the size of the varistors.

Effect of Sintering Time on Degradation Characteristics of ZPCCY-Based Varistors (ZPCCY계 바리스터의 열화특성에 미치는 소결시간의 영향)

  • 남춘우;박종아
    • Journal of the Korean Ceramic Society
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    • v.41 no.6
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    • pp.464-470
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    • 2004
  • The electrical stability of ZPCCY-based varistors composing of ZnO-Pr$_{6}$O$_{11}$-CoO-C $r_2$ $O_3$- $Y_2$ $O_3$ ceramics were investigated in various DC accelerated aging stress with sintering times. Sintering time greatly affected electrical properties and stability. Sintering time decreased nonlinear exponent in the range of 51.2∼23.8 and increased leakage current in the range of 1.3∼5.6 ${\mu}$A. The varistor sintered for 1 h exhibited high nonlinearity, whereas relatively low stability. On the contrary, the varistor sintered for 3 h exhibited low nonlinearity, whereas relatively high stability. But the varistor sintered for 2 h exhibited not only good nonlinearity, with nonlinear exponent of 38.6 and leakage current of 3.6 ${\mu}$A but also high stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, and dissipation factor are -0.80%, -1.81 %, +74.4%, and +0.88%, respectively.

Investigation of Water Leakage in Seosan A-Region Sea Wall using Integrated Analysis of Remote Sensing, Electrical Resistivity Survey, Electromagnetic Survey, and Borehole Survey (원격탐사, 전기탐사, 전자기탐사 및 시추공영상의 융합적 분석을 통한 서산지역 방조제 누수구역 판별)

  • Hong, Seong-In;Lee, Dongik;Baek, Gwanghyun;Yoo, Youngcheol;Lim, Kookmook;Yu, Jaehyung
    • Economic and Environmental Geology
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    • v.46 no.2
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    • pp.105-121
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    • 2013
  • This study introduces integrated approach on detection of a leakage in a sea wall based on remote sensing, electric resistivity survey, electromagnetic survey, and borehole survey for the Seosan A-Region sea wall. The satellite temperature distribution from Landsat ETM+ data identifies water leakage distribution and period by analyzing temperature mixing patterns between sea water and fresh water. Electric resistivity survey provides both horizontal and vertical anomaly distributions over the sea wall showing below average electric resistivity. Electromagnetic survey(electrical conductivity survey) reveals the potential possible leakage areas with minimal background impact by comparing electrical conductivity values between high and low tides. Borehole image processing system confirmed the locations of anomalies identified from the other survey methods and distributions of vertical fracture zones. The integrated approach identified 41.7% of the sea wall being the most probable area vulnerable to water leakage and effectively approximated both horizontal and vertical distribution of water leakage. The integrated analysis of remote sensing, electric resistivity survey, electromagnetic survey and borehole survey is considered to be an optimal method in identifying water leakage distribution, period, and extent of fractures knowledged from the boreholes.

Degradation Characteristics of Pr/Co/Cr/Er Co-doped Zinc Oxide Varistors by Impulse Current Stress

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.348-352
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    • 2014
  • In light of the sure protection function, the most important factors of a varistor are the clamping voltage ratio and degradation characteristics. The degradation characteristics of Pr/Co/Cr/Er co-doped zinc oxide varistors were investigated by impulse currents (0.4~2.1 kA) stress for the specified content of $Er_2O_3$ (0.5 and 2.0 mol%). The varistor doped with 2.0 mol% $Er_2O_3$ exhibited the best clamp characteristics, with the clamp voltage ratio (K) in the range of K = 1.63~1.88 at the impulse currents of 5-50 A. However, the varistor doped with 0.5 mol% exhibited excellent electrical stability, with variation rates for the breakdown field, for the nonlinear coefficient, and for the leakage current density of -6.9%, -12.6%, and -14.3%, respectively, after application of an impulse current of 2.1 kA. In contrast, the varistor doped with 2.0 mol% was destroyed after application of an impulse current of 1.2 kA.

A Study on the Characteristics of Volumetric Efficiency of an Axial Piston Pump considering Piston Tilting

  • Park, In-Kyu;Rhim, Yoon-Chul
    • KSTLE International Journal
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    • v.10 no.1_2
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    • pp.37-42
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    • 2009
  • This paper presents the characteristics of volumetric efficiency of an axial type piston pump considering the piston tilting. A numerical analysis is carried out in order to obtain the pressure distribution considering the fluid inertia at the notch of the valve plate. The cylinder pressure variation and the discharge flow rate are measured experimentally according to the operating conditions such as supply pressure, rotational speed, and viscosity of the working fluid by using the cam type test apparatus. Leakage is also measured considering piston tilting. The characteristics of the volumetric efficiency are analyzed with respect to various operating conditions and leakage is also analyzed according to the piston tilting angle. Results are applicable to improve the design of an axial type piston pump.

Analysis of Monitored Insulation Data Using Standard Deviation of Leakage Current Data in High-Power Cables at a Thermoelectric Power Station (화력발전소 고전력 케이블의 누설 전류 측정 데이터의 표준 편차값을 사용한 절연감시 데이터 분석)

  • Kim, Bo-Kyeong;Um, Kee-Hong
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.17 no.2
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    • pp.245-250
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    • 2017
  • From the instant of installation and operation, power cables start deteriorating. Cable systems can be maintained not only by monitoring the insulation status of the insulation layer and oversheath, but also the insulation status of the terminal and junction in high-voltage power cables. When the cable system (the cable itself and cable junctions combined) deteriorates, fire accidents happen due to dielectric breakdowns. We have invented a device to monitor the deteriorating status of cables, and installed it at Korea Western Power Co. Ltd. located in Taean, Chungcheongnam-do Province. In this paper, we present the results obtained using our device, through analysing and calculating the standard deviation of leakage current from cable insulators attached to the cables. When the standard deviation of analysed leakage current falls below a critical value, a cable system is deemed to be operating safely. But when the standard deviation of analysed leakage current is larger than the critical value, the insulation status of the terminal and junction in the cable system is considered to have seriously deteriorated. The terminal and junction in the relevant system should then be replaced preemptively in order to prevent blackout accidents of cables caused by the suspension of power supply.

Study of Failure Mechanisms of Wafer Level Vacuum Packaging for MEMG Gyroscope Sensor (웨이퍼 레벨 진공 패키징된 MEMS 자이로스코프 센서의 파괴 인자에 관한 연구)

  • 좌성훈;김운배;최민석;김종석;송기무
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.3
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    • pp.57-65
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    • 2003
  • In this study, we carry out reliability tests and investigate the failure mechanisms of the anodically bonded wafer level vacuum packaging (WLVP) MEMS gyroscope sensor. There are three failure mechanisms of WLVP: leakage, permeation and out-gassing. The leakage is caused by small dimension of the leak channel through the bonding interface and internal defects. The larger bonding width and the use of single crystalline silicon can reduce the leak rate. Silicon and glass wafer itself generates a large amount of outgassing including $H_2O$, $C_3H_5$, $CO_2$, and organic gases. Epi-poly wafer generates 10 times larger amount of outgassing than SOI wafer. The sandblasting process in the glass increases outgassing substantially. Outgassing can be minimized by pre-baking of the wafer in the vacuum oven before bonding process. An optimum pre-baking temperature of the wafers would be between $400^{\circ}C$ and $500^{\circ}C$.

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The Effects of Nanocrystalline Silicon Thin Film Thickness on Top Gate Nanocrystalline Silicon Thin Film Transistor Fabricated at 180℃

  • Kang, Dong-Won;Park, Joong-Hyun;Han, Sang-Myeon;Han, Min-Koo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.2
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    • pp.111-114
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    • 2008
  • We studied the influence of nanocrystalline silicon (nc-Si) thin film thickness on top gate nc-Si thin film transistor (TFT) fabricated at $180^{\circ}C$. The nc-Si thickness affects the characteristics of nc-Si TFT due to the nc-Si growth similar to a columnar. As the thickness of nc-Si increases from 40 nm to 200 nm, the grain size was increased from 20 nm to 40 nm. Having a large grain size, the thick nc-Si TFT surpasses the thin nc-Si TFT in terms of electrical characteristics such as field effect mobility. The channel resistance was decreased due to growth of the grain. We obtained the experimental results that the field effect mobility of the fabricated devices of which nc-Si thickness is 60, 90 and 130 nm are 26, 77 and $119\;cm^2/Vsec$, respectively. The leakage current, however, is increased from $7.2{\times}10^{-10}$ to $1.9{\times}10^{-8}\;A$ at $V_{GS}=-4.4\;V$ when the nc-Si thickness increases. It is originated from the decrease of the channel resistance.