• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.410-414
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• 2001

The microstructure, V-I characteristics, and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Y$_2$O$_3$based vairstors were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, and the varistor voltage and the leakage current in the V-I chracteristics. But the nonlinear exponent relatively strongly affected by cooling rate. And the cooling rate also greatly affected the stability for DC stress. In gross, the varistors cooled with 4$^{\circ}C$/min exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent is -1.44% and -4.85%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12 h)+(0.85 V$_{1mA}$115$^{\circ}C$/12 h)\`(0.90 V$_{1mA}$12$0^{\circ}C$/12 h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12 h)+(0.95 V$_{1mA}$15$0^{\circ}C$/12 h). It should be emphasized that the stability of these varistors is much superior to that of others.s.of others.s.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.511-516
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• 2002

Hexagonal $YMnO_3$ thin films were prepared from $Y(NO_3)_3{\cdot}5H_2O$ and $Mn(CH_3CO_2)_2{\cdot}4H_2O$ as starting materials on the Si(100) substrates by the sol-gel method. The crystal structure and the electrical properties of the $YMnO_3$ thin films were investigated as a function of heat treatment temperature, the amount of water(Rw) of hydrolysis and the addition of catalysis. The crystallization of the $YMnO_3$ thin film began at 700${\circ}C$ and completed at 800${\circ}C$ for 1 h. The c-axis (0001) preferred orientation of hexagonal $YMnO_3$ was detected for the $YMnO_3$ thin films with Rw=6 and that was decreased for the $YMnO_3$ thin films with Rw=1 and Rw=12. The crystallinity and preferred orientation of the $YMnO_3$ thin films were depended on the addition of acid and/or alkali catalysis, which, in turn, the preferred orientation of c-axis was decreased and the orthorhombic phase of $YMnO_3$ was detected to the specimens with the addition of catalysis. The $YMnO_3$ thin film with Rw=6 showed good leakage current density of $1.2{\times}10-8 A/cm^2$ at the applied voltage of 0.2V and the leakage current density was not changed drastically with applied voltage.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1631-1633
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• 2001

In manufacturing processes, various and suitable pulse shapes are required for the purpose of material processing and the pulseshape is regarded as a dominant factor due to the specific property of processing materials. Therefore, in this study, a variable pulse width, high duty cycle Pulse Forming Network(PFN) is constructed by time sequently. The power supply for this experiment consists of three switching circuits. The PFN elements operate at low voltage and drive the primary of HV leakage transformer. The secondary of the transformer has a full-wave rectifier, which passes the pulse energy to the load in a continuous sequence of properly phased and nested increments. We investigated laser pulse width as various delay time among three switching circuit. As a result, we tan obtain various laser pulse width from about 4ms to 10ms. The maximum laser pulse width obtained at this experiment was about 10ms at delay time of 4ms among each switching circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.117-118
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• 2008

High-pressure deuterium annealing process is proposed and investigated for enhanced electrical and reliability properties of 512Mb DDR2 DRAM without increase in process complexity. High pressure deuterium annealing (HPDA) introduced during post metal anneal (PMA) improves not only DRAM performance but also reliability characteristics of MOSFET. Compared with a control sample annealed in a conventional forming gas, additional annealing in a high pressure deuterium ambient at $400^{\circ}C$ for 30 min decreased G1DL current and junction leakage. The improvements can be explained by deuterium incorporation at $SiO_2$/Si substrate interface near isolation trench edge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• Journal of Ocean Engineering and Technology
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• v.35 no.6
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• pp.393-402
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• 2021

As greenhouse gas emissions from maritime transport are increasing, the International Maritime Organization is continuously working to strengthen emission regulations. Liquefied natural gas (LNG) fuel is less advantageous as a point of CO₂ reduction due to the methane leakage that occurs during the bunkering and operation of marine engines. In this study, greenhouse gas emissions from an LNG-fueled ship were analyzed from the perspective of the life cycle. The amount ofmethane emission during the bunkering and operation procedures with various boil-off gas (BOG) treatment methods and gas engine specifications was analyzed by dynamic simulation. The results were also compared with those of other liquid fuel engines. As a result, small LNG-fueled ships without a BOG treatment facility emitted 32% more greenhouse gas than ships utilizing marine gas oil or heavy fuel oil. To achieve a greenhouse gas reduction via a BOG treatment method, a gas combustion unit or re-liquefaction system must be mounted, which results in a greenhouse gas reduction effect of about 25% and 30%. As a result of comparing the amount of greenhouse gas generated according to the BOG treatment method used with each tank size from the perspective of the operating cycle with the amounts from using existing marine fuels, the BOG treatment method showed superior effects of greenhouse gas reduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.58-58
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• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.920-926
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• 1994

Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${\mu}{\textrm}{m}$ compared with that of 5 ${\mu}{\textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$\times$10-8 A/$\textrm{cm}^2$ and the charge storge density as large as 25.8$\mu$C/$\textrm{cm}^2$ was obtained.

• Proceedings of the KSME Conference
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• 2001.06c
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• pp.263-268
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• 2001

MCPs means Micro Cellular Plastics. The micro-cells are generated in the products by the difference of dissolution through the pressure drop after super critical fluid of CO2 or N2 dissolves into polymer. We have developed injection molding process adopting MCPs and applied it to a broad range of injection molded thermoplastic materials and applications. It can prevent the leakage of impact strength and increase the thermal conductivity, moreover regulate the thermal conductivity. Then we can develop the high strength foaming plastics. Also, it can be gained a competitive advantage by utilizing its processing benefits, e.g. the lightweight products and significant reductions in material consumption.