• 한국연소학회지
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• 제11권3호
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• pp.26-35
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• 2006

This work forcus on the development of gas sensor that measure the concentrations of exhaust gas using diode laser, Each diode laser for exhaust gas measurement is set to work at near-IR using both DA and WMS methods. Also use of fiber-coupled optical elements makes such a sensor rugged and easy to align. The results showed that gas concentrations of $O_2$, CO, $CO_2$, NO are accurately measured within ${\pm}2%$ error. The application of WMS method increased the beam intensity 2-3 times higher than DA method. It were experimentally compared WMS (Wavelength Modulation Spectroscopy) with DA (Direct Absorption) for the accuracy.

• 전기학회논문지P
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• 제51권3호
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• pp.137-141
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권7호
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• 한국연소학회:학술대회논문집
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• 한국연소학회 제26회 KOSCO SYMPOSIUM 논문집
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• pp.75-83
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• 2003

Diode laser absorption system is advantageous of their non-invasive nature, fast response time, high sensitivity and real-time measurement capability. Furthermore, recent advances in room-temperature, near-IR and visible diode laser sources for telecommunication, optical data storage applications are enabling combustion diagnostics system based on diode laser absorption spectroscopy. So, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor system are now appearing for a variety of applications. The objective of this research is to take advantage of distributed feed-back diode laser and develope new gas sensing system. It experimentally found out that the wavelength, power characteristics as a function of injection current and temperature. In addition to direct absorption and wavelength modulation spectroscopy have been demonstrated in these experiments and have a bright prospect to this diode laser system.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.105-112
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• 1997

Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.

• Journal of Radiation Protection and Research
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• 제23권4호
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• pp.237-242
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• 1998

생체나 공기 등 일반 환경시료의 방사성탄소 측정을 위한 액체섬광측정기술의 최적화에 연구의 목적을 두었다 일반 환경시료의 경우 $CO_2$ 직접흡수법을 적용하였으며, 이산화탄소 흡수제 Carbosorb $E^{TM}$와 섬광용액 Permafluor $V^{TM}$기 혼합비율을 1:1로 결정하였다. 이 20 ml 혼합용액에 포화 흡수되는 이산화탄소의 양은 평균 2.35 g 이며, 포집에 소요되는 시간은 약 40 분이었다 백그라운드 계수율은 1.88±0.06 cpm 이었으며, NIST 옥살산표준시료 측정결과 계측효율은 58.8±1.4 % 이었다. 이산화탄소 흡수량에 따른 계측효율을 보정하기 위하여 소광보정곡선을 구하였다. 자연준위 시료의 경우 4시간 계측시 비방사능 측정에 따른 전반적인 오차는 95 % 신뢰도상 약 7 %이었다. 이 측정방법에 대하여 2주 동안 시료의 안정성을 조사한 결과 계측효율과 백그라운드 계수율의 안정성을 의심할 만한 현상은 발견되지 않았다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권1호
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• pp.1-5
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• 2003

Zn$_4$SnSe$_{6}$ and Zn$_4$SnSe$_{6}$ :Co$^{2+}$ single crystals were by the chemical transport reaction method. They crystallized in the monoclinic structure. The direct energy band gaps of the Zn$_4$SnSe$_{6}$ and Zn$_4$SnSe$_{6}$ :Co$^{2+}$single crystals at 289k were found to be 2.146eV and 2.042eV. Optical absorption due to impurity in the Zn$_4$SnSe$_{6}$ :Co$^{2+}$single crystal was observed and described as originating from the electron transition between energy levels of Co$^{2+}$ion sited at T$_{d}$ symmetry point.y point.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.296-302
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• 1999

$CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ singlecrystals of thenormal spinel structure were grown by the C.T.R. method. The optical energy band structure of these compounds had a indirect band gap at the fundamental optical absorption band edge. The direct and the indirect energy gaps are found to be 2.325 and2.179eV for $Cdln_2S_4$ , and 2.303 and 2.169eV for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ at 5K, respectivly. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region with decreasing temperature, and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The Varshni constants$\alpha and \beta$ of the direct energy gap are given by $13.39{\times}10_{-4}eV/K$ and 509 K for $Cdln_2S_4$ and $29.73{\times}10_{-4} eV/K$ and 1398K for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$. The Varshni constants ${\alpha}and {\beta}$ of the indirect energy gap are given by 9.68${\times}10^{-4}$ eV/K 308K for $Cdln_2S_4$ and $13.33{\times}10_{-4}eV/K$ and 440K for $CdIn_2S_4 : Co^{2+}$ respectivly. The impurity optical absorption peaks due to cobalt dopant are observed in $CdIn_2S_4 : Co^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Co_{2+}$ ions located at $T_d$ symmetry site of $Cdln_2S_4$ host lattece.

• Transactions on Electrical and Electronic Materials
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• 제2권1호
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• pp.27-31
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• 2001

$\beta$-$In_2S_3$ and $\beta$-$In_2S_3$:$Co^{2+}$ thin films were grown using the spray pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap of the thin films was found to be 2.32 eV for $\beta$-$In_2S_3$ and 1.81 eV for $\beta$-$In_2S_3$:$Co^{2+}$(Co:1.0 mol%) at 198K. The direct energy band gap was found to be 2.67 eV for $\beta$-$In_2S_3$ and 2.17 eV for $\beta$-$In_2S_3$:$Co^{2+}$(Co:1.0 mol%). Impurity optical absorption peaks were observed for the ${\beta}$-$In_2S_3$:$Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory, to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.