• 제목/요약/키워드: $CH_4$ Selectivity

검색결과 187건 처리시간 0.027초

PTMSP-PDMS-Silica/PEI 복합막의 제조 및 투과특성 (Preparation and Permeation Characteristics of PTMSP-PDMS-Silica/PEI Composite Membranes)

  • 이현경;홍세령
    • 멤브레인
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    • 제18권2호
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    • pp.146-156
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    • 2008
  • 본 연구에서는 높은 투과도를 갖는 고분자량의 PTMSP를 합성하고 PTMSP와 hydroxy-terminated PDMS로부터 PTMSP-PDMS graft copolymer를 합성하였다. 그리고 PTMSP-PDMS graft copolymer에 TEOS의 함량을 15, 30, 50 wt%로 달리하여 졸-겔 방법에 의해 PTMSP-PDMS-silica 복합물을 제조하였다. PTMSP-PDMS-silica/PEI 복합막의 물리화학적 특성은 $^1H$-NMR, FT-IR, TGA, XPS, GPC, SEM 등을 사용하여 조사하였고, $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4,\;n-C_4H_{10}$ 기체에 대한 기체 투과도와 선택도 성질을 고찰하였다. 복합막의 투과도는 TEOS의 함량과 압력이 증가함에 따라 증가하였다. 그리고 기체들의 선택도는 TEOS 함량 30wt%에서 최대값을 나타내고 그 이상에서는 감소하는 경향을 나타내었다.

3상 교류 부채꼴 방전을 이용한 메탄으로부터 수소 생산 (Production of Hydrogen from Methane by 3phase AC GlidArc Plasma)

  • 전영남;김성천;임문섭
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회B
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    • pp.2232-2237
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    • 2007
  • Steam reforming and catalytic reforming of $CH_4$ conversion to produce synthesis gas require both high temperatures and high pressure. Non-thermal plasma is considered to be a promising technology for the hydrogen rich gas production from methane. In this study, three phase AC GlidArc plasma system was employed to investigate the effects of gas composition, gas flow rate, catalyst reactor temperature and applied electric power on the $CH_4$ and $H_2$ yield and the product distribution. The studied system consisted of three electrode and it connected AC generate power system different voltages. In this study, air was used for the partial oxidation of methane. The results showed that increasing gas flow rate, catalyst reactor temperature, or electric power enhanced $CH_4$ conversion and $H_2$ concentration. The reference conditions were found at a $O_2$/C molar ratio of 0.45, a feed flow rate of 4.9 ${\ell}$/min, and input power of 1kW for the maximum conversions of $CH_4$ with a high selectivity of $H_2$ and a low reactor energy density.

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공유 유기 골격체 기반 복합 분리막 : 고찰 (Covalent Organic Framework Based Composite Separation Membrane: A Review)

  • 심정환;라즈쿠마 파텔
    • 멤브레인
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    • 제33권4호
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    • pp.149-157
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    • 2023
  • 공유 유기 프레임워크(COF)는 분자 분리, 염료 분리, 가스 분리, 여과 및 담수화를 포함한 다양한 응용 분야에서 가능성을 보여주었습니다. COF를 막에 통합하면 투과성, 선택성 및 안정성이 향상되어 분리 공정이 향상됩니다. 단일 벽 탄소 나노튜브(SWCNT)와 COF를 결합하면 염료 분리에 이상적인 높은 투과성과 안정성을 가진 나노 복합막을 생성합니다. COF를 폴리아미드(PA) 막에 통합하면 합성 계면 전략을 통해 투과성과 선택성이 향상됩니다. 혼합 매트릭스 막(MMM)의 3차원 COF 필러는 CO2/CH4 분리를 향상시켜 바이오가스 업그레이드에 적합합니다. COF와 금속 유기 프레임워크(MOF) 막을 결합한 모든 나노 다공성 복합재(ANC) 막은 투과성-선택성 트레이드오프를 극복하여 가스 투과성을 크게 향상시킵니다. 가상 COF (hypoCOF)를 사용한 계산 시뮬레이션은 CO2 분리 및 H2 정제와 관련하여 우수한 CO2 선택성과 작업 능력을 입증합니다. 박막 복합재(TFC) 및 폴리술폰아미드(PSA) 막에 통합된 COF는 유기 오염물, 염 오염물 및 중금속 이온에 대한 거부 성능을 향상시켜 분리 능력을 향상시킵니다. TpPa-SO3H/PAN 공유 유기 프레임워크 막(COFM)은 대전된 그룹을 활용하여 정전기적 반발을 통해 효율적인 담수화를 가능하게 함으로써 기존의 폴리아미드 막에 비해 우수한 담수화 성능을 보여 이온 및 분자 분리의 잠재력을 제시했습니다. 이러한 연구 결과는 투과성, 선택성 및 안정성을 향상시켜 향상된 분리 공정을 위한 막 기술에서 COF의 잠재력을 강조합니다. 이 검토에서는 분리 공정에 적용된 COF에 대해 논의합니다.

Synthesis and Anion Binding Affinities of Novel Molecular Tweezers Based on Chenodeoxycholic Acid Bearing Different Lengths of Arm

  • Kim, Ki-Soo;Jang, Hyun-Seok;Kim, Hong-Seok
    • Bulletin of the Korean Chemical Society
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    • 제27권9호
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    • pp.1445-1449
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    • 2006
  • Molecular tweezers based on chenodeoxycholic acid bearing different lengths of arm were synthesized andtheir anion binding affinities were evaluated by $^1H$ NMR, isothermal calorimetric titration, and ESI mass spectrometry. Molecular tweezer 6 showed a high selectivity toward $H_2PO_4\;^-$ over $Cl^-,\;Br^-,\;I^-, $ and $CH_3CO_2\;^-$ by $^1H$ NMR titration, whereas the association constant for $F^-$ revealed the largest value as determined by ITC. The selectivity of 6 towards $F^-$ was about 103 times higher than that of $Cl^-,\;H_2PO_4\;^- $, and $CH_3CO_2\;^-$. ITCexperiment of 6 with $F^-$ in a DMSO showed two binding modes; two sequential association constants $K_1\;=\;2.77\;{\times}\;10^5\;M^{-1}$ and $K_2\;=\;8.68\;{\times}\;10^6\;M^{-1}$ were found. These sequential bindings were confirmed by ESI massspectrometry. 1 : 1 and 1 : 2 complexes of 6 and $F^-$ were found at m/z 868.08 and 884.04.

유클리디언 거리 기반의 단계적 소거 방법을 통한 화학센서 어레이 성능 최적화 (A Step-wise Elimination Method Based on Euclidean Distance for Performance Optimization Regarding to Chemical Sensor Array)

  • 임해진;최장식;전진영;변형기
    • 센서학회지
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    • 제24권4호
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    • pp.258-263
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    • 2015
  • In order to prevent drink-driving by detecting concentration of alcohol from driver's exhale breath, twenty chemical sensors fabricated. The one of purposes for sensor array which consists of those sensors is to discriminate between target gas(alcohol) and interference gases($CH_3CH_2OH$, CO, NOx, Toluene, and Xylene). Wilks's lambda was presented to achieve above purpose and optimal sensors were selected using the method. In this paper, step-wise sensor elimination based on Euclidean distance was investigated for selecting optimal sensors and compared with a result of Wilks's lambda method. The selectivity and sensitivity of sensor array were used for comparing performance of sensor array as a result of two methods. The data acquired from selected sensor were analyzed by pattern analysis methods, principal component analysis and Sammon's mapping to analyze cluster tendency in the low space (2D). The sensor array by stepwise sensor elimination method had a better sensitivity and selectivity compared to a result of Wilks's lambda method.

Investigation on Etch Characteristics of FePt Magnetic Thin Films Using a $CH_4$/Ar Plasma

  • Kim, Eun-Ho;Lee, Hwa-Won;Lee, Tae-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.167-167
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    • 2011
  • Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

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플렉서블한 금속-유기 골격체(MOFs)를 활용한 메탄/질소 분리 (CH4/N2 Separation on Flexible Metal-Organic Frameworks(MOFs))

  • 정민지;박재우;오현철
    • 한국재료학회지
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    • 제28권9호
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    • pp.506-510
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    • 2018
  • Nitrogen is a serious contaminant in natural gas because it decreases the energy density. The natural gas specification in South Korea requires a $N_2$ content of less than 1 mol%. Thus, cost-effective $N_2$ removal technology from natural gas is necessary, but until now the only option has been energy-intensive processes, e.g., cryogenic distillation. Using porous materials for the removal process would be beneficial for an efficient separation of $CH_4/N_2$ mixtures, but this still remains one of the challenges in modern separation technology due to the very similar size of the components. Among various porous materials, metal-organic frameworks (MOFs) present a promising candidate for the potential $CH_4/N_2$ separation material due to their unique structural flexibility. A MIL-53(Al), the most well-known flexible metal-organic framework, creates dynamic changes with closed pore (cp) transitions to open pores (ops), also called the 'breathing' phenomenon. We demonstrate the separation performance of $CH_4/N_2$ mixtures of MIL-53(Al) and its derivative $MIL-53-NH_2$. The $CH_4/N_2$ selectivity of $MIL-53-NH_2$ is higher than pristine MIL-53(Al), suggesting a stronger $CH_4$ interaction with $NH_2$.

$CH_4$/Ar 유도 결합 플라즈마를 이용한 Sapphire 기판의 식각 특성 (Etching properties of sapphire substrate using $CH_4$/Ar inductively coupled plasma)

  • 엄두승;김관하;김동표;양설;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.102-102
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    • 2008
  • Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

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Etch Properties of HfO2 Thin Films using CH4/Ar Inductively Coupled Plasma

  • Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Dong-Pyo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제8권6호
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    • pp.229-233
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    • 2007
  • In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

$CO_2$ 분리를 위한 PEGDA/PETEDA dendrimer 막의 제조 (Preparation of PEGDA/PETEDA Dendrimer Membranes for $CO_2$ Separation)

  • 한나;이현경
    • 멤브레인
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    • 제23권1호
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    • pp.54-60
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    • 2013
  • PEGDA/PETEDA dendrimer 막은 PEGDA에 5~15 wt%의 PETEDA dendrimer를 첨가하고 UV를 조사하여 제조하였다. 제조된 막의 특성은 FT-IR, $^1H$-NMR 그리고 DSC를 통해 분석하였다. PEGDA/PETEDA dendrimer 막의 유리전이온도($T_g$)는 PETEDA dendrimer의 함량이 증가할수록 감소하였다. $CH_4$에 대한 $CO_2$ 투과 특성은 PETEDA dendrimer의 함량과 압력을 변화시키며 조사하였다. 10 wt%의 PETEDA dendrimer를 포함하는 막의 투과도는 162.2 barrer였으나 $CO_2/CH_4$ 이상분리 인자는 31.8로 가장 높게 나타났다.