• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.85-90
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• 1998

Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.319-324
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• 2002

In this study, the reduce of plasma etching damage in PZT thin film with addictive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively coupled plasma. The etch rates of PZT thin films were 1450 ${\AA}/min$ at 30% additive Ar and 1100 ${\AA}/min$ at 10% auditive $O_2$ into $Cl_2/CF_4$ gas mixing ratio of 8/2. In order to reduce plasma damage of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures at $O_2$ atmosphere. From the hysteresis curries, the ferroelectric properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed PZT films is consistent wish the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x ray photoelectron spectroscopy (XPS) analysis, the intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• 한국진공학회지
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• 제6권4호
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• pp.364-371
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• 1997

MERIE 플라즈마 장비를 사용하여 실리콘의 트렌치 식각을 HBr, He-$O_2,SiF_4,CF_4$ 등의 가스를 주입하여 수행하였으며 식각 속도, 식각 프로파일 변화, 잔류물 생성 및 표면 상태 등을 관찰하였다. HBr만을 이용한 플라즈마 식각시에는 트렌치 하부 영역에 상당한 횡방향 식각이 일어나 항아리 모양의 식각 프로파일이 관찰되었으며, HBr에 He-$O_2$가스와 $SiF_4$나 $CF_4$등의 주입량을 변화시켜 벽면 기울기와 횡방향 식각의 정도를 제어할 수 있었다. 표면 잔류물 특성 및 표면 거칠기(roughness)등은 HBr/He-$O_2$/$SiF_4$가스를 동시에 주입하여 식각하였을 때 가장 양호한 식각 특성을 나타내었으며, 첨가 가스로 $SiF_4$를 이용함으로써 기존의 C-F계 플라즈마를 이용한 트렌치 식각 특성들보다 우수한 공정 결과를 얻었다. 또 한 $SiF_4$를 이용함으로써 $CF_4$ 첨가시보다 C의 잔류물을 크게 줄이고 표면 손상을 개선할 수 잇음을 X-선 광전자 분석과 주사전자현미경(scanning electron microscopy) 및 AFM(atomic force microscopy)의 결과로써 확인하였다.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.570-575
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• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2001년도 춘계학술발표회요약집
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• pp.373-373
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• 2001

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1999년도 추계학술발표회요약집
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• pp.300-300
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• 1999

• 한국동물위생학회지
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• 제20권4호
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• pp.359-370
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• 1997

This study was carried out to Investigate the biochemical characteristics, antibiotic susceptibility, serogroups and pili producibility test of enterotoxigenic Escherichia coli(ETEC) isolated from piglets with diarrhea in Kangwon province from March to October 1996. 1. Sixty eight E coli strains were isolated from 72 piglets with diarrhea and the biochemical and cultural reaction were compared with the classification criteria of Edwards and Ewing. 2. The serogroups of 26 isolates were classified as 08 : K87 6(8.8%), O20 : K1O1 4(5.9%), O141 : K85 4(5.9%), 09 : K103 : P987 3(4.4%), O45 : K 2(2.9%) 0139 : K82 2(2.9%), O64 : $K^{-}$2(2.9%), O149 : K91 1(1.5%), O157 : K88ac 1(1.5%) and O115 : $K^{-}$1(1.5%), respectively. 3. In antibiotic susceptibility test, the isolates showed high susceptible to Ak, Eno, Na, Gm, Am and Km, whereas resistance to Tc, Sm and Cf. 4. Sixty one strains(89.7%) of 68 I coli Isolates were resistant to one or more drugs. The isolates resistant to 2 and 3 or more drugs were 60.3% and 19.1%, respectively. Amog the 16 multiple resistant patterns, Sm Tc(11.5% ), Cf Sm Tc(11.5% ), Cf Cp Sm Su Tc(9.8% ) and Cf Cp Sm Su Tc(8.2%) patterns were frequently observed. 5. MRHA of guinea pig erythrocytes was detected in 9 out of 26 OK serotype and 9 out of 42 unidentified serotypes. MRHA titers of serotypes showed from 16 to 32 in O141 : K85 and no titers in O139 : K82. 6. By the GM1 ganglioside ELISA, $\beta$-, $\alpha$-, and $\gamma$-hemolysin producing strains was detected as 36, 6, and 5 from heat labile enterotoxin(LT) of 47 ETEC, respectively. The distribution of LT toxin from 112 isolates was showed $\beta$- hemolysin, 2 isolates $\alpha$-hemolysin and 3 isolates $\gamma$-hemol-ysin from 26 OK serotypes.