• Title/Summary/Keyword: $CF_4$ Plasma

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The Use of Inductively Coupled CF4/Ar Plasma to Improve the Etch Rate of ZrO2 Thin Films

  • Kim, Han-Soo;Woo, Jong-Chang;Joo, Young-Hee;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.1
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    • pp.12-15
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    • 2013
  • In this study, we carried out an investigation of the etching characteristics (etch rate, and selectivity to $SiO_2$) of $ZrO_2$ thin films in a $CF_4$/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 60.8 nm/min for $ZrO_2$ thin films was obtained at a 20 % $CF_4/(CF_4+Ar)$ gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter, namely ICP chamber pressure. X-ray photoelectron spectroscopy (XPS) analysis showed efficient destruction of the oxide bonds by the ion bombardment, as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch characteristics for the $CF_4$-containing plasmas.

CF4 Treatment Characteristics using an Elongated Arc Reactor (신장 아크 반응기를 이용한 CF4 처리특성)

  • Kim, Kwan-Tae;Lee, Dae-Hoon;Lee, Jae-Ok;Cha, Min-Suk;Song, Young-Hoon
    • Journal of Korean Society for Atmospheric Environment
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    • v.26 no.1
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    • pp.85-93
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    • 2010
  • $CF_4$ removal characteristics were investigated using an elongated arc reactor. The advantage of the elongated arc reactor includes direct use of treated gas as plasma operating gas and the enhancement of the removal reaction by using a thermo-chemistry and a plasma induced chemistry at the same time. Geometrical configurations, such as the length of the reactor and the shape of a throat, were tested to get an optimized removal efficiency with low power consumption. As results, over 95% of $CF_4$ removal was obtained with 300 lpm of total flowrate for various $CF_4$ concentration (0.1~1%). Corresponding specific energy density (SED), which means required electrical energy to treat the unit volume of treated gas, is about 3.5 kJ/L, The present technique can be applied to real applications by satisfying three major concerns, those are the high flowrate of treated gas, high removal efficiency (> 95%), and low power consumption (< 10 kJ/L).

The study of ionization and attachment coefficients in $CF_4$ molecular gas by Boltzmann equation (볼츠만 방정식에 의한 $CF_4$ 분자가스의 전리 및 부착계수에 관한 연구)

  • Song, Byoung-Doo;Ha, Sung-Chul;Jeon, Byoung-Hoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.628-631
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    • 2004
  • A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

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Analysis of Process Parameter dependency on the characteristics of high density fluoro carbon plasma using global model (글로벌 모델에 의한 저온 고밀도 플루오로카본 플라즈마 특성의 공정변수 의존성 해석)

  • Lee, Ho-Jun;Tae, Heung-Sik
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.879-881
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    • 1999
  • Radical and ion densities in a CF4 plasma have been calculated as a function of input power density. 9as pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and CF+ become dominant neutral and ionic radical at the high power condition. As the pressure increases. ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of CF4 feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of CF4 monotonically decreases with flow rate. which results in increase in CF3 and decrease in CF density. The calculation results show that the SiO2 etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

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Plasma Uniformity Numerical Modeling of Geometrical Structure for 450 mm Wafer Process System (450 mm 웨이퍼 공정용 System의 기하학적 구조에 따른 플라즈마 균일도 모델링 분석)

  • Yang, Won-Kyun;Joo, Jung-Hoon
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.190-198
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    • 2010
  • Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.

A Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma (저압 플라즈마 세정가스에 따른 세정특성 연구)

  • Koo, H.J.;Ko, K.J.;Chung, C.K.
    • Clean Technology
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    • v.7 no.3
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    • pp.203-214
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    • 2001
  • A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

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Behaviors of Atomic Fluorine and Fluorocarbon Radicals in $CF_4+H_2$Electron Cyclotron Resonance Plasma Employing Actinometry and Appearance Mass Spectrometry (전자 회전 공명 플라즈마 발생 장치에서의 $CF_4+H_2$가스 방전시 Appearance Mass Spectrometry와 Actinometry를 통한 플루오로카본 래디칼과 플루오린 원자의 거동에 관한 연구)

  • 도현호;김정훈;이석현;황기웅
    • Journal of the Korean Vacuum Society
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    • v.4 no.4
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    • pp.417-424
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    • 1995
  • 전자 회전 공명 플라즈마 발생 장치에서 CF4를 방전시켰을 때 각종 플루오로카본 래디칼의 절대적, 상대적 밀도 변화를 수소 철가율, 동작 압력 그리고 축방향에 따라 appearace mass spectrometry(AMS)를 통해 조사하였으며, 플루오린 원자의 상대적 밀도 변화가 actinometry법에 의해 조사되었다. 수소첨가에 따른 CF2 래디칼의 거동을 actinometry와 AMS로 살펴보았을 때 서로 일치하는 경향을 얻었으며 마이크로웨이브전력 500W, 압력 7.5mTorr에서 CF3와 CF2 래디칼의 밀도가 CF에 비해 높았으며 각각 2X1013/㎤, 1X1013/㎤의 값을 가졌다. 수소를 첨가함에 따라 플루오린 원자와 CF3의 밀도는 감소하는 반면 CF2와 CF의 밀도는 현저히 증가하여 수소가 40% 첨가된 경우 CF2의 밀도가 CF3보다 커짐을 확인하였다. 또한, CF2가 증가하면서 C2F4의 존재가 확인되었으며, 수소가 30% 첨가된 경우 축방향을 따라 C2F4래디캄만이 증가하였고 플루오린 원자는 감소하는 반면 다른 CFx(x=1~3)래디칼은 거의 변화가 없었다. 이러한 실험 결과를 토대로 CF4+H2 플라즈마를 이용한 산화막 식각 특성이 설명되었다.

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Reduce of Etching Damage of PZT Thin Films in $Cl_2/CF_4$ Plasma with addition of Ar and $O_2$ ($Cl_2/CF_4$ 플라즈마 Ar, $O_2$ 첨가에 따른 PZT 막막의 식각 손상 효과)

  • Kang, Myoung-Gu;Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.21-25
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    • 2001
  • In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

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Reduce of Etching Damage of PZT Thiin Films in $Cl_{2}/CF_{4}$ Plasma with addition of Ar and $O_2$ ($Cl_{2}/CF_{4}$ 플라즈마에 Ar,$O_2$첨가에 따른 PZT 박막의 식각 손상 효과)

  • 강명구;김경태;김창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.21-25
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    • 2001
  • In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.

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Study of characteristics of SBT etching using $CF_4$/Ar Plasma ($CF_4$/Ar 플라즈마를 이용한 SBT 박막 식각에 관한 연구)

  • Kim, Dong-Pyo;Seo, Jung-Woo;Kim, Seung-Bum;Kim, Tae-Hyung;Chang, Eui-Goo;Kim, Chang-Il
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1553-1555
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    • 1999
  • Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

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