• Title/Summary/Keyword: $CF_4$ Plasma

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The etching characteristics of $(Ba_{0.6}Sr_{0.4})TiO_{3}$ film Using $Ar/CF_{4}$ Inductively Coupled Plasma ($Ar/CF_{4}$ 유도결합 플라즈마로 식각된 $(Ba_{0.6}Sr_{0.4})TiO_{3}$ 박막의 특성분석)

  • Kang, Pill-Seung;Kim, Kyoung-Tae;Kim, Dong-Pyo;Kim, Chang-Il;Lee, Soo-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.16-19
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    • 2002
  • (Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

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Structural Properties of Dielectric Barrier Reactor with Hole (DBH) for CF4 Decomposition

  • Jung Jung Gun;Kim Jong Suk;Park Jae Yoon;Kim Kwang Soo;Rim Geun Hie
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.4
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    • pp.30-35
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    • 2003
  • In this paper, the $CF_4$ decomposition efficiency is investigated for three simulated plasma reactors that are needle plate reactor, metal particle reactor, and dielectric barrier reactor with hole (DBH). The$CF_4$ decomposition efficiency by DBH is much better than that by needle plate reactor or metal particle reactor. When applied voltage is increased up to the critical voltage for spark formation in the all reactors, the $CF_4$ decomposition efficiency is increased. The $CF_4$ decomposition efficiency in needle plate reactor and metal particle reactor is about $12\%$ and $22\%$ respectively at applied voltage of 23 kV (consumption power: 110 W) and $CF_4$ concentration of 500 ppm, however, the $CF_4$ decomposition efficiency is more than $95\%$ in case of DBH. DBH should be much better than two reactors investigated for $CF_4$ decomposition.

Etching characteristics and modeling of BST thin films using inductively coupled plasma (유도결합 플라즈마를 이용한 BST 박막의 식각 특성 및 모델링)

  • Kim, Gwan-Ha;Kim, Kyoung-Tae;Kim, Dong-Pyo;Lee, Cheol-In;Kim, Tae-Hyung;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.29-32
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    • 2004
  • This work was devoted to an investigation of etching mechanisms for $(Ba,Sr)TiO_3$ (BST) thin films in inductively coupled $CF_4/Ar$ plasma. We have found that an increase of the Ar content in $CF_4/Ar$ plasma causes non-monotonic behavior of BST etch rate, which reaches a maximum value of 40 nm/min at 80% Ar. Langmuir probe measurements show a weak sensitivity of both electron temperature and electron density to the change of $CF_5/Ar$ mixing ratio. O-D model for plasma chemistry gave monotonic changes of both volume densities and fluxes for active species responsible for the etching process. The analysis of surface kinetics confirms the possibility of non-monotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.

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The Dry Etching Characteristics of TiO2 Thin Films in N2/CF4/Ar Plasma

  • Choi, Kyung-Rok;Woo, Jong-Chang;Joo, Young-Hee;Chun, Yoon-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.1
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    • pp.32-36
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    • 2014
  • In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

Experimental Analysis and Optimization of Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process Plasma Etching Process (실험계획법에 의한 $CF_4/O_2$ 플라즈마 에칭공정의 최적화에 관한 연구)

  • Choi, Man-Sung;Kim, Kwang-Sun
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.4
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    • pp.1-5
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    • 2009
  • This investigation is applied Taguchi method and the analysis of variance(ANOVA) to the reactive ion etching(RIE) characteristics of $SiO_2$ film coated on a wafer with Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process mixture. Plans of experiments via nine experimental runs are based on the orthogonal arrays. A $L_9$ orthogonal array was selected with factors and three levels. The three factors included etching time, RF power, gas mixture ratio. The etching rate of the film were measured as a function of those factors. In this study, the etching thickness mean and uniformity of thickness of the RIE are adopted as the quality targets of the RIE etching process. The partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. The RIE are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a RIE etching process.

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The Study of Silica Surface Reaction with Fluorocarbon Plasma Using Inductively Coupled Plasma (Inductively Coupled Plasma에 의한 fluorocarbon 가스 플라즈마의 실리카 표면 반응 연구)

  • Park, Sang-Ho;Shin, Jang-Uk;Jung, Myung-Young;Choy, Tae-Goo;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.6
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    • pp.472-476
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    • 1998
  • The surface reactions of silica film($SiO_2-P_2O_5-B_2O_3-GeO_2$) with fluorocarbon plasma has been studied by using angle -resolved x-ray photoelectron spectroscopy(XPS). It has been confirmed that residual carbon consists of C-C and C-CFx bonds and fluorine mainly binds silicon in the case of etched silica by using $CF_4$ gas plasma. The surface reaction of silica with various fluorocarbon gases, such as $CF_4,C_2F_6 and CHF_3$ were investigated. XPS results showed that though the etching gases were changed, the elements and binding states of the residual layers on the etched silica by using various fluorocarbon gas plasma were nearly the same . This seems to be due to the high volatility of byproducts, that is, $SiF_4 and CO_2$ etc..

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