• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.4
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• pp.988-996
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• 1998

BN ceramics with 0.07wt% $V_{2}O_{5}$ and 0.03wt% CuO(BNC3V7) sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. Dielectricconstant of 44.3, TCF of 22 ppm$/^{\circ}C$ and $Qxf_{o}$ value of 22,000 GHz can be obtained from BNC3V7, multilayer type band pass filters using tapped method and conventional method were designed for PCS (Personal Communication System) applications. Tapped method by adopting input/output-tapping scheme the chip filter stucture becomes simpler and needs fewer layers than that using the conventional input/output-coupling scheme. A multilayer type band pass filter fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at $900^{\circ}C$ were compared with the designed ones. Even though the centered frequencies of tapped and conventional band pass chaip filters were measured to shift about 90MHz downward, the band pass characteristics of both filters were similar that of designed ones. The spuriousresonance characteristic of tapped pass chip filter was better than that of conventional chip filer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.563-566
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• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.387-391
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• 2012

Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.159-163
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• 2016

In this paper, in order to develop optimum composition ceramics with excellent piezoelectric properties, $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.823}Sb_{0.08}Ta_{0.037})O_3+0.3wt%Bi_2O_3+0.4wt%Fe_2O_3$ lead-free piezoelectric ceramics were synthesized by conventional soild-state method. The calcination temperature of columbite precursors were fabricated at temperature range from $950^{\circ}C$ to $1,150^{\circ}C$ and sintering aids with low melting point were added to densify these ceramics. Effect of calcination temperature on dielectric and piezoelectric properties of ceramics were investigated. the ceramics with B-site columbite precursors at temperature of $1,100^{\circ}C$ obtained the optimal values of $d_{33}=272$ [pC/N], $k_p=0.51$, $Q_m=102$, ${\varepsilon}_r=978$.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.19-25
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• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.637-640
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• 2017

In this study, $(1-x)(Na_{0.52}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3-x(Bi_{0.5}(Na_{0.7}K_{0.3})_{0.5}ZrO_3$ ceramics were fabricated by BNKZ substitution using a conventional solid-state method to develop excellent lead-free piezoelectric ceramics for piezoelectric actuators; their dielectric and piezoelectric properties were then investigated. All specimens were in the orthorhombic phase. $NKL-NSTO_3$ ceramics with x=0.01 showed excellent piezoelectric properties. The density (${\rho}$), piezoelectric charge constant ($d_{33}$), planar piezoelectric coupling coefficient ($k_p$), mechanical quality factor ($Q_m$), and dielectric constant (${\varepsilon}_r$) had optimized values of $4.56g/cm^3$, 208 pC/N, 0.43, 96, and 975, respectively.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.211-219
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• 1991

본 논문은 고주파에서의 Ni-Zn페라이트의 첨가물에 따른 소결특성에 관하여 연구한 것이다. 연구에서 사용한 시편은 20mol% NiO, 30mol% ZnO 및 50mol% Fe$_{2}$ $O_{3}$이 조성으로된 페라이트를 모재로 하고 첨가물로서 각각 0.0025mol%, 0.005mol% 및 0.001mol%의 비율로 Nb$_{2}$ $O_{5}$, Bi$_{2}$ $O_{3}$ 및 V$_{2}$ $O_{5}$를 첨가하였다. 그리고 소결을 1100.deg.C에서 이루어졌다. 초투자율은 V$_{2}$ $O_{2}$가 첨가된 시편의 100KHz-1000KHz주파수대에서 4*$10^{2}$~8*$10^{2}$의 높은 값을 얻었다. 손실계수는 100KHz~500KHz주파수대에서 1*10~3*$10^{-2}$이었다. 1/(.mu.*Q)값은 0.005mo;% Bi$_{2}$ $O_{3}$가 첨가된 시편에서 가장 높은 값을 나타내었다. 자기저항은 초유자율과 반비례의 관계를 나타내었다. 실험의 결과 첨가물에 의한 소결특성은 액상형성에 의하여 고른 입자성장을 확인할 수 있었다. 따라서 0.01mol% V$_{2}$ $O_{5}$를 첨가한 시편이 가장 우수한 자기특성을 나타내고 있음을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.184-184
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• 2009

Lead-free Piezoelectric $[Li_{0.04}(Na_{0.44}K_{0.56})](Nb_{0.88}Ta_{0.1}Sb_{0.02})$ (abbreviated as NKNLTS) has been synthsized by conventional mixed oxide method traditional ceramics process without cold-isostatic pressing. Effect of $Bi_2O_3$ addition on NKNLTS ceramics was investigated. Piezoelectric properties of the ceramic were varied with the amount of $Bi_2O_3$ addition and showed the maximum Kp value at 0.4wt% $Bi_2O_3$ addition. The results show that the optimum poling condition for NKNLTS ceramics of 3.5kV/mm, poling temperature of $120^{\circ}C$ and poling time of 30min. At the sintering temperature of $1100^{\circ}C$ and the calcination temperature $800^{\circ}C$, the optimal values of density=$4.7g/cm^2$, Kp=0.44, $\varepsilon_r$=1309 were obtained. Consequently, lead free piezoelectric ceramics with the excellent piezoelectric could be fabricated using a conventional mixed oxide process and the optimal manuacturing condition of those was obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.20.1-20.1
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• 2011

The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.