• Title/Summary/Keyword: $Ba_2SiO_4$

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The Photoluminescence Characteristic of Ba2-xSrxSiO4:Eu2+ Phosphor Particles Prepared by Spray Pyrolysis (분무열분해 공정에 의해 제조된 Ba2-xSrxSiO4:Eu2+ 형광체의 발광특성)

  • Kang, Hee Sang;Park, Seung Bin;Koo, Hye Young;Kang, Yun Chan
    • Korean Chemical Engineering Research
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    • v.44 no.6
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    • pp.609-613
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    • 2006
  • Ba2-xSrxSiO4:Eu2+ phosphor particles with the high photoluminescence (PL) intensity under long wavelength ultraviolet (UV) were prepared by spray pyrolysis. The photoluminescence, morphological and crystalline characteristics of $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles prepared by spray pyrolysis were investigated. $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles prepared by spray pyrolysis had various colors from bluish green to yellow by changing the ratio of barium and strontium of the host material. In case of x=0, the main emission peak of $Ba_2SiO_4:Eu^{2+}$ phosphor was 500 nm. In case of x=2, the main emission peak of $Sr_2SiO_4:Eu^{2+}$ phosphor was 554nm. $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles obtained by spray pyrolysis had spherical shape and hollow structure. On the other hand, the post-treated $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles had large size and irregular shape. The $Ba_{1.488}Sr_{0.5}SiO_4:Eu_{0.012}{^{2+}}$ phosphor particles had the maximum PL intensity after post-treatment at temperature of $1300^{\circ}C$ for 3h under reduction atmosphere.

Effect of $CaTiO_3$Additions on Microwave Dielectric Properties in $BaWO_4$-$Mg_2$$SiO_4$Ceramics ($BaWO_4$-$Mg_2$$SiO_4$세라믹스의 $CaTiO_3$첨가에 따른 고주파 유전특성)

  • 박일환;김경용;김병호
    • Journal of the Korean Ceramic Society
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    • v.38 no.3
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    • pp.280-286
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    • 2001
  • 10 이하의 저유전율을 갖는 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스의 미세구조와 고주파 유전특성을 조사하였다. (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 정방정(tetragonal) 구조를 가진다. 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$세라믹스는 BaWO$_4$$Mg_2$SiO$_4$의 상들이 공존하는 혼합상을 보였으며, $Mg_2$SiO$_4$가 이차사으로 형성된 것이 관찰되었다. 120$0^{\circ}C$~140$0^{\circ}C$에서 2시간 동안 소결된 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 $\varepsilon$$_{r}$=6.37~8.21, Q.f=15000~99422 그리고 $ au$$_{f}$=73.9~48.9 ppm/$^{\circ}C$의 고주파 유전특성을 가졌다. $\tau$$_{f}$를 보정하기 위해, CaTiO$_3$(1,5 wt%)가 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x$\geq$0.9) 세라믹스에 첨가되었다. 135$0^{\circ}C$에서 2시간 동안 소결된 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$+CaTiO$_3$(5 wt%) 세라믹스는 $\varepsilon$$_{r}$=7.3, Q.f=30532 그리고 $\tau$$_{f}$=-30 ppm/$^{\circ}C$의 고주파 유전특성을 얻었다. 얻었다.

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(Ba,Sr)$_2SiO_4:Eu^{2+}$ Phosphor Particles by Spray Pyrolysis Process

  • Kang, Hee-Sang;Kang, Yun-Chan;Park, Hee-Dong;Shul, Yong-Gun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.811-814
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    • 2002
  • $(Ba,Sr)_2SiO_4:Eu^{2+}$ phosphor particles with high brightness were prepared by spray pyrolysis. The changes in the photoluminescence intensity and morphology of $(Ba,Sr)_2SiO_4:Eu^{2+}$ were investigated by changing the posttreatment temperature and the concentration of dopant. The prepared $(Ba,Sr)_2SiO_4:Eu^{2+}$ particles has a dense structure, but irregular shape after the posttreatment. When they were excited by the ultraviolet light of 410 nm, a broad emission band with a peak at 508 nm was observed. The photoluminescence intensity of the prepared $(Ba,Sr)_2SiO_4:Eu^{2+}$ particles was enhanced by increasing the posttreatment temperature up to 1300 $^{\circ}C$ and further improved by adding several rear-earth codopants. The $(Ba,Sr)_2SiO_4:Eu^{2+}$ particles prepared by spray pyrolysis had a good excitation spectrum in the wavelength longer than 350 nm. Therefore, it was concluded that the $(Ba,Sr)_2SiO_4:Eu^{2+}$ prepared by spray pyrolysis is a good green-emitting phosphor for LED application.

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Crystalline Phases and Dielectric Properties of Crystallized Glasses in the System (Ca, Sr, Ba) O-Al2O3-B2O3-SiO2-TiO2

  • Tuzuku, Koichiro;Kishi, Hiroshi;Taruta, Seiichi;Takusagawa, Nobuo
    • The Korean Journal of Ceramics
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    • v.5 no.2
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    • pp.189-194
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    • 1999
  • Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

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Synthesis of BaSrSiO4 Phosphors by Solid State Reaction and Its Luminescent Properties (고상법에 의한 BaSrSiO4 형광체의 분말합성 및 발광특성)

  • Kang, Joo Young;Won, Hyeong Il;Hayk, Nersisyan;Won, Chang Whan
    • Korean Journal of Materials Research
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    • v.23 no.12
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    • pp.727-731
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    • 2013
  • In this study, green barium strontium silicate phosphor ($BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$) was synthesized using a solid-state reaction method in air and reducing atmosphere. Investigation of the firing temperature indicates that a single phase of $BaSrSiO_4$ is formed when the firing temperature is higher than $1400^{\circ}C$. The effect of firing temperature and doping concentration on luminescent properties are investigated. The light-emitting property was the best when the molar content of $Eu_2O_3$ was 0.025 mol. Also, the luminescent brightness of the $BaSrSiO_4$ fluorescent substance was the best when the particle size of the barium was $0.5{\mu}m$. $BaSrSiO_4$ phosphors exhibit the typical green luminescent properties of $Eu^{3+}$ and $Eu^{2+}$. The characteristics of the synthesized $BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$ phosphor were investigated using X-ray diffraction (XRD) and scanning electron microscopy. The maximum emission band of the $BaSrSiO_4:Eu^{3+}$, $Eu^{2+}$ was 520 nm.

An Electrical Properties of Antifuses based on $BaTiO_3/SiO_2$ films ($BaTiO_3/SiO_2$로 구성된 안티퓨즈의 전기적 특성)

  • Lee, Young-Min;Lee, Jae-Sung;Lee, Yong-Hyun
    • Journal of Sensor Science and Technology
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    • v.7 no.5
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    • pp.364-371
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    • 1998
  • A novel antifuse has been developed for field programmable gate arrays (FPGA's) as a voltage programmable link with Al/$BaTiO_3/SiO_2$/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of $BaTiO_3$ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$, the program voltage was about l4.4V and on-resistances were ranged between 40 and $50{\Omega}$. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/$BaTiO_3$ and TiW-silicide/$SiO_2$.

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UV pumped three color phosphor blend White emitting LEDs

  • Choi, Kyoung-Jae;Park, Joung-Kyu;Kim, Kyung-Nam;Kim, Chang-Hae;Kim, Ho-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1338-1342
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    • 2005
  • We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

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Effect of $Si_3N_4$ Addition on the Microstructure and PTCR Characteristics in Semiconducting $BaTiO_3$ Ceramics (반도성 $BaTiO_3$ 세라믹스의 미세구조 및 PTCR 특성에 미치는 $Si_3N_4$ 첨가효과)

  • 김준수;정윤해;이병하
    • Journal of the Korean Ceramic Society
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    • v.31 no.10
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    • pp.1089-1098
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    • 1994
  • The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

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Luminescence Characteristics of Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes (LED용 Ba2+ Co-Doped Sr2SiO4:Eu 황색 형광체의 발광특성)

  • Choi, Kyoung-Jae;Park, Joung-Kyu;Kim, Kyung-Nam;Kim, Chang-Hae;Kim, Ho-Kun
    • Journal of the Korean Ceramic Society
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    • v.43 no.3 s.286
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    • pp.169-172
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    • 2006
  • We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

Valuation properties of $SiO_2-B_2O_3$-R(R=CaO, BaO, ZnO, $Bi_2O_3$) borosilicate glass system for fabricating low temperature ceramics (저온 소결 세라믹스 제조를 위한 $SiO_2-B_2O_3$-R(CaO, BaO, ZnO, $Bi_2O_3$)계 붕규산염 유리 특성 평가)

  • Yoon, Sang-Ok;Lee, Hyun-Sik;Kim, Kwan-Soo;Heo, Wuk;Shim, Sang-Heung;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.272-273
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    • 2006
  • LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 4 종류의 borosilicate계 glass를 선정하고 filler로 $Al_2O_3$ ceramics를 filler 사용하여 30~50 vol% glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 $SiO_2$$B_2O_3$ 함량비를 고정한 후 R(CaO, BaO, ZnO, $Bi_2O_3$)에 따라 유리 연화온도(Ts)와 함량이 소결에 미치는 영향 및 유전 특성 변화를 고찰한 결과, CaO-$B_2O_3-SiO_2$ glass의 경우 다량의 2 차상이 형성되었고, 이에 $900^{\circ}C$ 이하에서 완전 소결이 이루어지지 않았으며, BaO-$B_2O_3-SiO_2$ glass는 celsian($BaAl_2Si_2O_8$) 결정이 형성되면서 소결성의 저하를 갖고 왔으며, ZnO-$B_2O_3-SiO_2$ glass는 소결이 진행됨에 따라 주상이 $Al_2O_3$에서 gahnite($ZnAl_2O_4$) 결정이 형성되면서 품질계수가 크게 증가하였으며, $Bi_2O_3-B_2O_3-SiO_2$ glass는 45 vol%일 때 $900^{\circ}C$에서부터 일정한 선수축율 특성을 나타내었지만, 다량의 액상으로 인하여 유전 특성의 저하를 나타내었다.

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