• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1005-1011
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• 1994

The three different composition of BaTi4O9, Ba2Ti9O20 and BaTi5O11 were prepared by coprecipitation process, and then the dielectric properties of these compounds were measured at low microwave frequencies. The powder showing high level of purity was synthesised by the coprecipition reaction of BaCl2 and TiCl4 where (NH4)2CO3 and NH4OH were used as a deflocculent. Followings are the result of this study: 1. The sintering temperature increased with increasing TiO2 content. 2. BaTi4O9 powder were synthesized as a single phase by this processing technique, but the resultant Ba2Ti9O20 and BaTi5O11 phase existed with Ba2Ti9O20 and BaTi5O11 phases. 3. Single phase BaTi4O9 showed high dielectric constant value of 35, high Q value of 8100.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1327-1334
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• 1999

Behaviors of abnormal expansion during calcination process of Ba2Ti9O20 ceramics and its related effects on the sintering characteristics were investigated as a function of precursors. When BaCO3 and TiO2 powders were used as starting materials. BaTi4O9 phase which has relatively large molar volume was formed drastically with abnormal ex-pansion during the calcination at 95$0^{\circ}C$ to 115$0^{\circ}C$ ON the contrary using BaTiO3 and TiO2 powders as starting materials led to retardation of the formation of BaTi4O9 phase and concurrently suppressed the abnormal expansion during cal-cination process. Especially the calcined powder of BaTiO3 and TiO2 had advantages in the densification and formation of Ba2Ti9O20 single phase in the sintering process.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.895-900
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• 1996

Ba(Ti1-xSnx)4O9 powder was synthesized by oxalate method. With the substitution of Sn into Ti site the sintered BaTiO4 crystal phase was stabilized due to the formation of solid solution. The optimal amounts of Sn solutbility for formation of BaTi4O9 crystalline phase was 0.16mole and of Sn was substituted and sintering was done at 135$0^{\circ}C$ for 30 minutes long rod type crystal was well developed and the highest Q value was obtained. But dielectric constant wasnearly constant without regarding to the Sn addition and the sintering time.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.915-920
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• 2004

The main phase of $BaTi_{4}O_9$-based ceramics was transformed to $BaTi_{5}O_{11}$ caused by the sintering with borosilicate glass, which was analyzed by using XRD and TEM. We considered that the phase change from $BaTi_{4}O_9$-based ceramics to the Ti-rich $BaTi_{5}O_{11}$ phase resulted from borosilicate glass selective absorbing of Ba ions from the $BaTi_{4}O_9$. In these results, we found a dependence on the amounts of the glass frits and the annealing temperature, and the phase change is also dependent of the main phases of $Ba_{4}Ti_{13}O_{30},\;and\;Ba_{2}Ti_{9}O_{20}$, which are involved in the $BaO-TiO_2-based$ Ti-rich region. In the case of sintering of middle- and high- permittivity material with additional glass frits for middle- and high- dielectric coefficients LTCC composition, control of weight fraction of the glass frits accompanying low-temperature sintering property with appropriate phase change is required.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.25-25
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• 2003

BaTi₄O/sub 9/계 세라믹스에 저온 소결 조제로 첨가된 lithium-borosilicate계 유리 프리트의 첨가에 따른 상분해 현상을 XRD, TEM에 의하여 분석하였다. 유리 프리트의 첨가가 없는 BaTi₄O/sub 9/계 세라믹스는 첨가량과 열처리 온도에 관계없이 BaTi₄O/sub 9/상과 소량의 TiO₂상만이 관찰되었으나 저온 소결 조제로 사용된 유리 프리트의 첨가량이 증가할수록 BaTi₄O/sub 9/계 세라믹스는 BaTi₄O/sub 9/상 보다 Ti-rich상인 Ba₂Ti/sub 9/O/sub 20/상, BaTi/sub 5/O/sub 11/상, 또는 BaTi/sub 5/O/sub 11/상과 Ba₄Ti₃O/sub 30/상으로 공존하며 분해되는 것을 관찰하였다. 공존하며 분해되는 것을 관찰하였다. 유리 프리트가 10 wt% 첨가시 600℃ 까지는 BaTi₄O/sub 9/상과 TiO₂상으로 존재하였으나 700℃ 전후에서 BaTi/sub 5/O/sub 11/상과 Ba₄Ti/sub 13/O/sub 30/상으로 분해되기 시작하여 875℃에서는 BaTi₄O/sub 9/상이 완전히 분해되어 BaTi/sub 5/O/sub 11/상이 주상으로 Ba₄Ti/sub 13/O/sub 30/상은 이차상으로 존재하는 것을 확인하였다. 또한, 열처리 온도가 증가할수록 Ba₄Ti/sub 13/O/sub 30/상이 상대적으로 감소하고 있는 것도 관찰할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1023-1028
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• 1993

To obtain a single phase of Ba2Ti9O20 at lower temperature than previious other researches. We investigated the effect of Zr substitution for predetermined portions of Ti in Ba2Ti9O20. In this study, the four compounds(x=0, 0.028, 0.048, 0.068) of Ba2(Ti1-xZrx)9O20 were prepared by coprecipitation reaction of BaCl2, TiCl4 and ZrOCl2 with (NH4)2CO3 and NH4OH as the coprecipitating agents and pH regulators, in queous solution. Owing to 4.8 mol% addition, the single phase of Ba2Ti9O20 showing high Q was obtained at 115$0^{\circ}C$ which is lower by 25$0^{\circ}C$ than the temperature in case of mechanical mixtures of BaCO3 and TiO2.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.8
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• pp.1068-1074
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• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.125-129
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• 2004

[ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.995-1004
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• 1994

Phase relation and microwave dielectric properties of the system BaO.(Nd1-xSmx)2O3.TiO2 (n=4, 5) were studied. With n=5 (1 : 1 : 5), Ba2Ti9O20 and TiO2 formed in case of X$\leq$0.7, and Ba2Ti9O20 and Sm2Ti2O7 formed at X=1.0 as the second phases dispersed in fine-grained orthorhombic matrix phase. With n=4 (1 : 1 : 4). on the contrary, only fine grains of an ortho-rhombic phase were observed irrespective of Nd/Sm ratio. The compositions of these two stable orthorombic phases having distinct lattic constants even with the same Nd/Sm ratio were estimated as 4BaO.5(Nd1-xSmx)2O3.18TiO2 and BaO.(Nd1-xSmx)2O3.4TiO2 with n=5 and n=4 in the system BaO.(Nd1-xSmx)2O3.TiO2, respectively. Consequently the composition BaO.(Nd1-xSmx)2O3.5TiO2 lies in the compatible triangle of 4BaO.5(Nd1-xSmx)2O3.18TiO2 and the second phases mentioned above. The microwave dielectric properties (~4 GHz) of BaO.(Nd1-xSmx)2O3.5TiO2 can be controlled effectively by adjusting Sm content : with increasing X from 0 to 0.7, both dielectric constant and the temperature coefficient of resonant frequency decreased monotonically from 82 to 65 and from 91 (ppm/$^{\circ}C$) to -19(ppm/$^{\circ}C$), respectively, while unloaded Q(Qo) remained constant at about 2,600.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.1038-1044
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• 1996

The variations of sintering and electrical characteristics of semiconducting BaTiO3 ceramics with sintering agents added were investigated comparing the case of BaB2O4 addition to BN and TiO2 addition. When BaB2O4 added in BaTiO3 ceramics the densitifcation of specimen could be acheived more easily and recvealed the better PTCR characteristics than BN and TiO2 addition. As increase of addition of BaB2O4 in BaTiO3 spec imens the slope of resistivity jump also increased but the temperature of maximum resistivity decreased, It was supposed that addition of BaB2O4 led to increase of Ns (acceptor state density) value at grain boundaries.