• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.377-380
• /
• 2001

The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.124-125
• /
• 2006

Multilayer ceramic capacitor (MLCC) miniaturization has increased the demand for superfine $BaTiO_3$ powder due to its thin dielectric layer. Hydrothermally synthesized $BaTiO_3$ powder a pseudo-cubic phase resulting in poor dielectric properties due to size effect and hydroxyl ion inclusion in the $BaTiO_3$ lattice. We attempted a superfine (lower than 100 nm) highly tetragonal $BaTiO_3$ powder via a solvothermal method without precipitating agent. The lattice parameters and the relative amounts of tetragonal and cubic phases were determined using Rietveld refinement.

• Journal of Powder Materials
• /
• v.16 no.1
• /
• pp.37-42
• /
• 2009

In this study, the feasible test for the mechanical property characterization of $BaTiO_3$ ceramics and multi-layer ceramic capacitor(MLCC) was performed with nanoindentation technique. In case of $BaTiO_3$ ceramics, hardness and elastic modulus are dependent on the densification of specimen showing the highest hardness and elastic modulus values of 12.3 GPa and 155 GPa, respectively at $1260^{\circ}C$. In case of MLCC chip, hardness of dielectric layer was lower than that of margin region. The nanoindentation method could be useful tool for the measurement of mechanical property within $BaTiO_3$ dielectric layer of very thin thickness in high capacitance MLCC.

• Journal of the Korean Vacuum Society
• /
• v.11 no.1
• /
• pp.1-7
• /
• 2002

We deposited $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin-films on Pt/Ti/$SiO_2$/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.313-313
• /
• 2008

Aerosol Deposition(AD) method is based on the impact consolidation phenomenon of ceramic fine particles at room temperature. AD is promising technology for the room temperature deposition of the dielectrics thin films with high quality. Embedding of passive components such as capacitors into printed circuit board is becoming an important strategy for electronics miniaturization and device reliability, manufacturing cost reduction. So, passive integration using aerosol deposition. In this study, we examine the effects of the characteristics of raw powder on the thickness, roughness, electrical properties of $BaTiO_3$ thin films. Thin films were deposited on the copper foil and copper plate. Electrical and material properties was investigated as a change of annealing temperature. We final aim the effects of before and after of laminated on the electrical properties and suit of embedded capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.616-619
• /
• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.3
• /
• pp.407-410
• /
• 1998

The characteristics of $(Ba,Sr)TiO_3$[BST] thin films with the variation of $O_2/Ar$ ratio in sputtering gas deposited on $RuO_2$ bottom electrode were investigated. Dielectric constant of BST film increases from 135 to 190 with increasing oxygen partial pressure from 10 to 50, which is mainly due to the improved crystallinity of BST film. The instability of $RuO_2$ surface in $BST/RuO_2$ interface and the increase in the surface roughness of BST thin films with higher $O_2/Ar$ ratio appeared to play an important roles on the degradation of the leakage current characteristics of $Al/BST/RuO_2$ capacitor with various $O_2/Ar$ ratio in sputtering gas. As a consequence, the leakage current of BST thin film showed the lowest value of $1.9{\times}10^{-7}\; A/{\textrm}{cm}^2$ at $O_2/Ar{\approx}1/9$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.31-31
• /
• 2008

고주파 잡음 발생과 고집적화 문제 해결을 위해 고용량 디커플링 캐패시터를 기판에 내장하는 연구가 활발히 진행되고 있다. 본 연구에서는 초고주파 환경에서 고용량 기판 내장형 디커플링 캐패시터로의 응용을 위해 $BaTiO_3$박막을 에어로졸 데포지션 법을 이용하여 12~0.2 ${\mu}m$의 두께로 제조하였고 그 유전특성을 조사하였다. 그결과, 1 MHz에서 permittivity가 70, loss tangent은 3% 이하였으며, capacitance density는 $1{\mu}m$의 두께에서 59 nF/$cm^2$이었다. 하지만, 박막의 두께가 $1{\mu}m$ 이하에서는 XRD를 통해 결정성이 확인 되었음에도 큰 누설전류로 인해 유전특성을 확인할 수 없었다. 이 누설전류의 발생 원인을 조사하기 위해 $BaTiO_3$박막의 표면의 미세구조를 SEM으로 관찰한 결과 여러 결함들이 확인되었으며, 또한 전극 직경의 크기를 1.5 mm에서 0.33 mm로 작게 변화시킴으로서 그 유전특성을 조사하여 박막의 불균일성과 박막화의 가능성을 확인하였다.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.124-124
• /
• 2005

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.111-111
• /
• 2005