• 반도체디스플레이기술학회지
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• 제11권3호
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• pp.63-67
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• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.

• 전기학회논문지
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• 제56권9호
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• pp.1609-1613
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• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-, Sr- and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around 670^{\circ}C $ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with increasing amount of $Dy_2O_3$. The average grain size and thickness of the BSCT specimens doped with 0.1 mol% $Dy_2O_3$ were approximately $1.9{\mu}m$ and $70{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_2O_3$, the values of the BSCT thick films doped with 0.1 mol% $Dy_2O_3$ were 3697 and 0.4% at 1 kHz, respectively. The leakage current densities in all BSCT thick films were less than $10^{-9}A/cm^2$ at the applied electric field range of 0-20 kV/cm.

• 전기의세계
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• 제28권5호
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• pp.39-43
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• 1979

The aging of permittivity of a barium titanate dielectrics doped with La$_{2}$O$_{3}$ under zero and low DC field has been studied. The aging rate was decreased as the amount of La$_{2}$O$_{3}$ addition is increased to 3 mole%. The zero field aging rate of barium titahate doped with La$_{2}$O$_{3}$. 3TiO$_{2}$ was similar to that doped with La$_{2}$O$_{3}$.5V/mil DC field aging rate of La$_{2}$O$_{3}$.3TiO$_{2}$ doped sample, howeve, was lowered to that of La$_{2}$O$_{3}$ doped sample. When the phase transformation is occured from the paraelectric state to the ferroelectric state, 90.deg. domains are mucleated in order that the system becomes thermodynamically more stable. It is concluded that the aging phenomenon is occured as the dielectric constant is decreasing by the nucleation and growth of 90.deg. domains.

• 한국세라믹학회지
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• 제35권6호
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• pp.640-646
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• 1998

PbO-TiO2-B2O3-BaO계 유리에서 PbTiO3의 핵생성 및 결정화를 위한 최적조건의 확입을 위해 핵생성 속도 곡선을 도출하고자 열시차 분석법(DTA)을 응용하였다. PbTiO3의 함량비가 60mol%인 4성분계 유리 샘플은 용융액으로부터 자연 냉각시켜 제조되었으며, 핵생성을 위해 유리 샘플은 40$0^{\circ}C$와 50$0^{\circ}C$ 사이에서 열처리하였다. 이때 46$0^{\circ}C$에서 핵생성 속도가 최대값을 나타내었다. DTA의 결정화 피크 온도는 핵생성을 위한 열처리시간이 증가함에 따라 감소하였으며, DTA의 승온속도에 비례하여 증가하였다. 이러한 결과는 계에 생성된 핵의 밀도가 핵생성 처리온도와 시간의 증가에 따라 증가함을 보여주고 있다.

• 한국결정성장학회지
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• 제32권5호
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• pp.175-182
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• 2022

MLCC(Multi-Layer Ceramic Capacitor)의 유전체 층에 사용되는 BaTiO₃는 유전 특성의 온도안정성을 향상시키기 위해 첨가제로서 희토류 및 Mg를 사용한다. 이러한 첨가제는 소결 중 입자성장 및 치밀화 거동, 결국 유전 특성에 지대한 영향을 주게 되므로 조성에 따른 미세구조 발현 양상을 살펴보는 것이 중요하다. 본 연구는 95BaTiO₃-1Dy₂O₃-2MgO-2SiO₂(mol%)의 조성에서 온도 변화에 따른 결정구조, 입자성장 및 밀도 변화를 관찰하고 이러한 변화가 유전 상수에 미치는 영향을 관찰하였다. 1200~1300℃의 온도범위에서 소결 온도가 증가함에 따라, 평균 입도는 눈에 띄게 커지는 반면 밀도의 변화는 미미하여 입자크기가 주요한 미세구조적 요소임을 밝혔다. 본 실험에서 관찰된 입자크기의 온도의존성은 기존 입자성장 이론에서 설명한 온도 변화에 따른 입자성장 거동의 변화양상과 잘 부합하였으며, 이러한 이해는 향후 희토류가 첨가된 BaTiO₃에서 유전 특성 향상을 위한 소결 미세구조 제어에 유용하게 활용될 수 있을 것이다.

• 한국분말재료학회지
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• 제13권2호
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• pp.119-123
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• 2006

The grain growth behavior of $0.95Na_{1/2}Bi_{1/2}TiO_{3}-0.05BaTiO_{3}$ (NBT-5BT) has been investigated with respect to the grain shape. The powder compacts of NBT-5BT were sintered at 1200 for various times. The corresponding equilibrium shape was a round-edged cube with flat {100}-faces. Abnormal grains were not observed in the specimens sintered for 1 to 12 h but abnormal grains appeared when sintered for 24 h. Before the formation of abnormal grains, a valley was observed in the measured grain size distribution of NBT-5BT, showing that the grain size distribution was a combination of two unimodal distributions. The present result suggests that the grain growth in NBT-5BT was governed by the growth of facet planes which would occur via 2-dimansional nucleation and growth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.3-5
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• 1993

It is very important that a spectrum of reflectance is in accord wi th a spectrum of absorbance for a effective heating. Therefore. the objective of this study was to achieve a technical composite for material plan which PTC thermistor increase a radiation property of far-infrared and keep a characteristic of R-T The Ceramic speciman studies had the composition $BaTiO_3$ with additive of 1.67 $Al_2O_3$, 3.75 $SiO_2$, 1.25 $TiO_2$, 0.15 $Sb_2O_3$ and 0.00-0.182 $MnO_2$. $MnO_2$ amounts of additives was both increase on the anomalous resistivity-temperature characteristics and high efficiency on the radiation properties bodies of far-infrared. This result shows that specimens produced high emissivity(average 0.8) of far-infrared at 4.5-15$[{\mu}m]$ by measuring a characteristic of IR and R-T.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.31-32
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• 1988

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.685-688
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The grain size decreased with increasing amounts of $MnO_2$, and the BSCT(50/40/10) thick film doped with 1wt% $MnO_2$ showed a value of 6.5mm. The thickness of thick films by four-cycle on printing/drying was approximately 100mm. The relative dielectric constant, dielectric loss and tunability of the BSCT(S0/40/10) thick films doped with 1.0wt% $MnO_2$ were 1296, 0.61% and 11.18%, respectively.

• 한국세라믹학회지
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• 제50권2호
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• pp.157-162
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• 2013

The need for lead-free piezoceramics has caused a renewal of interest in $BaTiO_3$-based systems. Recently, it was found that ceramics in the $(Ba,Ca)(Zr,Ti)O_3$ system have properties comparable to those of $Pb(Zr,Ti)O_3$. However, these ceramics require rather high sintering temperatures of $1450-1550^{\circ}C$. In this work, the effect of $TiO_2$ and CuO addition on the sintering behavior, microstructure, dielectric and piezoelectric properties of $(Ba_{0.85}Ca_{0.15})(Zr_{0.1}Ti_{0.9})O_3$ (BCTZ) ceramics will be discussed. BCTZ ceramics were prepared by the mixed oxide route and 1 mol % of $TiO_2$ or CuO was added. Undoped and doped ceramics were sintered at $1350^{\circ}C$ for 1-5 h. CuO was found to be a very effective sintering aid, with samples sintered for 1 h at $1350^{\circ}C$ having a bulk density of 95% theoretical density; however the piezoelectric properties were greatly reduced, probably due to the small grain size.