• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권8호
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• pp.392-398
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• 2006

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1275-1276
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• 2007

For fabrication of $BaTiO_3$ system Ferroelectric thick films, (Ba,Sr,Ca)$TiO_3$ (BSCT) powders, prepared by using the alkoxide-based sol-gel method, were doped $MnCO_3$ as acceptor and $Dy_{2}O_{3}$ as donor. $MnCO_3$ and $Dy_{2}O_{3}$-doped (Ba,Sr,Ca)$TiO_3$ thick films were fabricated by screen printing techniques on high purity alumina substrates. The structure and dielectric properties were investigated with variation of $Dy_{2}O_{3}$ amount. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size and thickness of specimens no doped with $Dy_{2}O_{3}$ was 1.32mm, 52mm, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Dy_{2}O_{3}$ were 4043 and 0.4% at 1 kHz, respectively. The relative dielectric constant gradually decreased in the measured frequency range from 0.1 to 100 kHz

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.77-77
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• 2009

$Pb(Zr,Ti_O_3$계 세라믹스는 우수한 압전 특성으로 인하여 압전변압기 및 액츄에이터, 센서 등 많은 분야에 응용이 되어져 왔다. 그러나, 최근 들어 $1000^{\circ}C$에서 급속도로 많은 휘발을 하는 PbO는 환경 및 인체에 나쁜 영향을 미칠 뿐 아니라 사용 후의 처리도 어려워 선진국에서는 사용을 제한하거나 줄이고 있는 추세에 있다. 따라서, PbO를 포함하지 않은 무연 (Lead-free)계 압전 세라믹스에 대한 연구가 많은 관심을 끌고 있으며 앞으로는E 장래성 있는 하나의 이슈 분야가 될 것이다. 이러한 Pb-based System 세라믹스를 대체 할 재료로서 $(Bi_{1/2}Na_{1/2})TiO_3$나 Tungsten-Bronze type, $(K_{1/2}Na_{1/2})NbO_3$ 등이 주로 연구가 되고 있다. 특히, alkali niobate를 기초로 한 $(K_{1/2}Na_{1/2})NbO_3(NKN)$은 무연 압전 물질로서 많은 주목을 받고 있다. 그러나, NKN의 주요 성분인 K 의 높은 조해성 때문에 일반적인 고상방법으로는 고 밀도의 세라믹을 얻기 힘들뿐더러 낮은 상전이 온도 때문에 많은 응용에는 제약이 되고 있다. 이러한 세라믹의 단점을 보완하고자 Hot forging, RTGG, SPS 등 과 같이 특수한 소결방법을 사용하여 고밀도의 세라믹을 제작하지만 이 방법들은 제품 대량 생산에 있어 경제적으로나 복잡한 제조과정을 고려할 때 매우 비효율적이라고 판단된다. 그러므로 $BaTiO_3$, $LiTaO_3$, Mg, Ca등을 첨가 시켜 소결을 향상시키고 고밀도를 얻기 위해 많은 연구가 진행 중이다. 따라서 본 연구에서는 Pb-based계의 세라믹스를 대체할 우수한 특성의 세라믹스를 제작하고자 기존의 $(K_{1/2}Na_{1/2})NbO_3(NKN)$세라믹스에서 낮은 용융온도 때문에 소결하기 어려운 $KNbO_3$를 제거한 $NaNbO_3$에 $LiNbO_3$와 $BaTiO_3$를 추가한 $NaLiNbO_3-BaTiO_3$세라믹스에 $K_4CuNb_8O_{23}$(KCN)을 첨가함으로서 이에 따른 압전 및 유전 특성을 조사하였다.

• 한국세라믹학회지
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• 제26권5호
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• pp.617-624
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• 1989

Piezoelectric composites of O-3 connectivity were prepared by thermosetting barium titanate-phenolic resin composite under various cruing pressure. Among three kinds of pore in O-3 type ceramic-polymer composite, such as matrix pores, particle pores, and ceramic-polymer interface pores, the effect of interface porosity on the dielectric and piezoelectric constant was investigated. In pure barium titanate ceramics, the porosity factor of dielectric and piezoelectric constants were 5.7 and 5.0, respectively. However, in BaTiO3-polymer composite, the interface porosity factor of the piezoelectric constant was greater than that of the dielectric constant, interface porosity factor b in d33 was 9.8 and in r 4.6. On the other, piezoelectric voltage constant g33 was independent of the porosity of barium titanate ceramics. But in composite system, the piezoelectric voltage constant g33 was decreased with interface porosity.

• Advances in materials Research
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• 제1권2호
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• pp.115-128
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• 2012

The structural and electrical properties of $(1-x)Ba(Sm_{1/2}Nb_{1/2})O_3-xBaTiO_3$; ($0{\leq}x{\leq}1$) ceramics were prepared by conventional ceramic technique at $1375^{\circ}C$/7 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were derived from the X-ray diffraction (XRD) data using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm m. Dielectric study revealed that the compound $0.75Ba(Sm_{1/2}Nb_{1/2})O_3-0.25BaTiO_3$ is having low and ${\varepsilon}^{\prime}$ and ${\varepsilon}^{{\prime}{\prime}}$ a low $T_{CC}$ (< 5%) in the working temperature range (up to+$100^{\circ}C$) which makes this composition suitable for capacitor application and may be designated as 'Stable Low-K' Class I material as per the specifications of the Electronic Industries Association. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in the system. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compounds.

• 전기학회논문지
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• 제61권2호
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• pp.339-341
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• 2012

The high Tc superconductor of YBCO system with the nominal composition of precursor was prepared from mixed powders of $Y_2O_3$, $BaCO_3$, CuO and $TiO_2$ by the thermal pyrolysis method. The effect of $TiO_2$ doping to Y based ceramics superconductors fabricated by the thermal pyrolysis reaction, to investigate the effect of the dopant on the superconductivity. The voltage appearing across the field-cooled HTS sample increased with external magnetic field. The improvement of critical current property as well as the mechanical property is important for the application. The improvement of the critical current can be achieved by forming the nano size defect working as a flux pining center inside the superconductor. We simply added $TiO_2$ to starting materials to dope $TiO_2$ and observed an increase in the trapped field and the critical current density up to at least 5 wt % $TiO_2$. The $TiO_2$ was converted to fine $BaTiO_3$ particles which were trapped in YBCO matrix during the sintering process. We observed a peak effect of Jc that can be attributed to $TiO_2$ doping and results suggest that introducing a proper amount of pinning centers can significantly enhance current density.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.139.2-139.2
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• 2000

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.78.1-78
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• 2003

• 한국세라믹학회지
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• 제39권5호
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• pp.438-445
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• 2002

본 연구에서는 $PbO-TiO_2-SiO_2-BaO-ZnO-Al_2O_3-CaO-B_2O_3-Bi_2O_3-MgO$계의 유리를 $1,400{\circ}C$에서 용융시킨 후, 급랭, 분쇄하여 glass frit을 제조하였다. Glass frit 분말을 일축가압성형한 후 $750~1,000{\circ}C$의 온도범위에서 2시간 동안 소성 및 결정화 하였다. Glass frit의 결정화는 $750{\circ}$ 전후의 온도에서 시작되었고, 저온에서의 주된 결정상은 $Al_2O_3$와 hexagonal celsian($BaAl_2Si_2O_8$)이었다. 소성온도가 높아지면서 monoclinic celsian, $ZnAl_2O_4,\;Zn_2SiO_4,\;CaTi(SiO_4)O,\;TiO_24 등이 주된 결정상으로 나타났고, 특히 celsian은 hexagonal에서 monoclinic으로 상전이가 발생하였다. 그리고 15wt%의 PbO를 첨가한 glass frit에만 $PbTiO_3-CaTiO_3$ 고용체가 나타났다. 1MHz 대역에서 유전특성을 살펴본 결과 유전상수는 11~16이었고, 유전손실은 0.020 미만이었다. 그러나 15wt%의 PbO를 첨가한 glass frit의 경우는 $PbTiO_3-CaTiO_3$ 고용체 결정상의 존재로 유전상수가 17~26으로 높았고, 유전손실은 0.010~0.015로서 다른 조성들에 비하여 우수한 특성을 나타내었다.