• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1133-1136
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• 1995

RF-magnetron sputtering 방법으로 형성한 $BaTa_2O_6$의 공정변수에 따른 전기, 광학적 특성변화를 관찰하여 $BaTa_2O_6$ 박막의 TFELD(thin film electroluminescent display) 절연막으로서 응용 가능성을 연구하였다. $BaTa_2O_6$ 박막의 유전특성은 증착시의 $O_2$ 함량과 sputtering 압력의 변화에는 큰 영향을 받지 않으나 기판온도에는 영향을 받는 것으로 확인되었다. 이들 공정변수를 가변하여 실험한 결과, $BaTa_2O_6$ 박막 형성의 최적조건으로 플라즈마 압력을 6 mtorr, sputtering gas 내의 $O_2$ 혼합비율은 40%, 기판온도는 $100^{\circ}C$로 결정하였다. 이상의 조건에서 제조된 $BaTa_2O_6$ 박막은 10.2 ${\mu}C/cm^2$의 매우 우수한 성능지수를 보였다. 이상의 $BaTa_2O_6$ 박막을 하부절연층으로, 절연파괴강도가 높은 $SiO_xN_y$를 상부 절연층으로 사용하여 제조된 EL 소자는 1 kHz, 삼각파 구동시 발광 임계전압은 약 32 volts, 최대휘도는 54 $cd/m^2$으로 측정되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.231-237
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• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.120-126
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• 1996

In the present study, we have studied on the characteristics of BST thin films with various Ba/Sr ratios by using sol-gel method. Barium-acetate, strontium-acetate and titanium isopropoxide are used as starting materials to fabricate BST thin films by sol-gel method. The fabrication conditions are estabilished through the TG-dT analyses and XRD measurements. BST thin films with the Ba/Sr ratios of 90/10, 70/30, 50/50 and 30/70 were deposited on the Pt/Ta/SiO$_{2}$Si substrate with the estabilished sol-gel process, and their characteristics were examined. The relative permittivity and the leakage current density at 5V vary from 287 to 395 and from 2.3 to 220${\mu}$A/cm$^{2}$, respectively, with various Ba/Sr ratio. Among the films investigatd in this research, BST (70/30) thin film shows the best relative permittivity and dielectric loss of BST (70/30) thin film are 395 and 0.045, respectively and the leakage current density at 5V is 2.3${\mu}$A/cm$^{2}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.