• 대한전기학회논문지
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• 제43권5호
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• pp.789-794
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• 1994

In this study, the structural and microwave dilelectric properties of 0.15BaO-0.15SmS12TOSI3T-0.7TiOS12T ceramics with sintering and annealing conditions were investigated. In the specimen sintered at 1350 [$^{\circ}C$], dielectric constant and quality factor were good values of 80.19,2006 (fS10T=4.6851[GHz]). To improve the $\tau$S1fT of specimen which was manufactured by the optimumsintering condition (1350[$^{\circ}C$],2[Hr.]), annealed from 2[hr.] to 16[hr.] at the annealing temperature of 1200 [$^{\circ}C$]. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. In the specimen of 4[hr.] annealed, the temperature coefficient of resonant frequency was minimum value, and increased with increasing the annealing time.

• 한국진공학회지
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• 제22권4호
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• pp.181-187
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• 2013

$Dy^{3+}$ 이온이 도핑된 $BaMoO_4$ 형광체 분말을 고상반응법으로 합성하였으며, 형광체의 결정 구조, 입자의 형상과 크기, 흡광과 발광 특성을 조사하였다. 모든 형광체 분말의 결정 구조는 $Dy^{3+}$ 이온의 몰 비에 관계없이 주 회절 피크 (112)를 갖는 정방 정계이었다. $Dy^{3+}$ 이온의 몰 비가 증가함에 따라 결정 입자는 용해되면서 큰 덩어리 형태의 결정 입자를 형성하였다. 흡광 스펙트럼은 293 nm에 피크를 갖는 전하 전달 밴드와 230~320 nm 영역에서 상대적으로 세기가 약한 다수의 $Dy^{3+}$ 이온의 전이 신호로 구성되었다. 발광 스펙트럼의 경우에 $Dy^{3+}$ 이온의 $^4F_{9/2}{\rightarrow}^6H_{11/2}$와 $^4F_{9/2}{\rightarrow}^6H_{9/2}$ 전이에 의한 666 nm와 754 nm에 피크를 갖는 적색 발광의 세기는 미약하였고, $^4F_{9/2}{\rightarrow}^6H_{15/2}$와 $^4F_{9/2}{\rightarrow}^6H_{13/2}$ 전이에 의한 각각 486 nm와 577 nm에 피크를 갖는 청색과 황색 발광의 세기는 상대적으로 매우 컸다. 실험 결과는 $Dy^{3+}$의 황색과 청색의 발광 세기 비를 제어함으로써 백색 발광을 구현할 수 있음을 제시한다.

• 한국산림과학회지
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• 제84권2호
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• pp.145-150
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• 1995

기내배양된 아까시나무(Robinia pseudoacacia L.)의 줄기기부에서 발생된 callus로부터 기관발생을 통하여 식물체재분화 시스템을 확립하였다. Callus는 줄기를 BA 또는 NAA가 함유된 MS배지에 배양하였을 때 유도되었으며, BA처리구가 NAA처리구보다 유도율이 높았다. BA가 첨가된 배지에 줄기를 배양하였을 때 기부 callus의 생장은 광조건 및 암조건에서도 잘 증식되었다. 줄기기부에서 발생된 callus는 녹색과 희면서 노란색을 띠는 callus로 분리되어 2.0mg/l BA와 0.5mg/l NAA가 함유된 mMS배지에 배양하였을 때 녹색의 callus로부터 줄기가 재분화되었다. 재분화된 줄기는 생장조절제가 함유되지 않은 ${\frac{1}{2}}MS$배지에서 발근되었다.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.140-142
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• 1989

1.54um 파장에서 최대 형광을 나타내는 ZrF4-BaF2-LaF3-AlF3-NaF : ErF3 유리를 built-in-casting 법에 의해 제조하였다. Er+3 이온을 0.2몰부터 4몰까지 첨가하였으며, Er+3 이온의 4I13/2 준위의 lifetime 은 Er+3 이온 0.2몰부터 2몰까지 28msec로 최대값을 갖으며 4몰일때는 급격히 감소하였다.

• 한국표면공학회지
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• 제54권3호
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• pp.112-118
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• 2021

Dy³⁺- and Eu³⁺-codoped BaWO₄ phosphors for white light-emitting diode were synthesized with different activator ions via a solid-state reaction process. The structural, morphological, and optical properties of the BaWO₄:Dy³⁺,Eu³⁺ phosphors were investigated as a function of Eu³⁺ concentration at a fixed concentration of Dy³⁺ ions. XRD patterns exhibited that all the synthesized phosphors had a tetragonal system, irrespective of the concentrations of Dy³⁺ and Eu³⁺ ions. The excitation spectra of the synthesized phosphors were composed of three intense bands centered at 251, 355, and 393 nm and several weak peaks. For the BaWO₄:Dy³⁺,Eu³⁺ phosphors synthesized with 1 mol% of Eu³⁺, the emission spectra under ultraviolet excitation at 393 nm showed two strong blue and yellow bands at 485 and 577 nm corresponding to the ⁴F_9/2⁶H_15/2 and ⁴F_9/2⁶H_13/2 transitions of Dy³⁺ ions, respectively and several weak bands in the range of 600-700 nm resulting from the 4f transitions of Eu³⁺ ions. As the concentration of Eu³⁺ ions increased, intensities of the blue and yellow emission bands gradually decreased while those of the red emissions increased rapidly and the energy transfer efficiency from Dy³⁺ to Eu³⁺ ions was 95.3% at 20 mol% of Eu³⁺. The optimum white light emission with x=0.363, y=0.357 CIE 1931 chromaticity coordinates was obtained for the sample doped with 5 mol% Dy³⁺ and 1 mol% of Eu³⁺.

• 대한전기학회논문지
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• 제44권8호
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• pp.1068-1074
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• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.134-136
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• 1993

Using the extended H$\ddot{u}$ckel molecular orbital method in connection with the tight binding model, we have studied electronic structure and related properties of superconducting $YBa_2Cu_3O_{7-x}$ crystals in which O-atoms in regular sites were selectively replaced with F atoms. The calculations are based on the crystal structure of Y-Ba-Cu-O obtained by Beno et al.. We use atomic coordinates that refer to the unrelaxed Y-Ba-Cu-O system. In analogy to the isomerism problem with molecules, we discuss all possible combinations of F-substitutions in O-sites with one, two, and four F atoms. The calculations are carried out within charged clusters model for the analogues of the YBa-free copperoxide. Our results suggest that the electronic structure of the symmetrically F-substituted or F-added compound is closer to that of the oxygen-deficient superconducting compound than that obtained from unsymmetrical substitution. This applies in particular if O is replaced with in an O(1) site. This suggests that superconductivity is very sensitive to the oxygen content of the $CuO_2$ layers.

• 한국재료학회지
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• 제24권4호
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.325-325
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• 2007

The perovskites in the $LaAlO_3-BaZrO_3$ system (i.e., $(1-x)LaAlO_3-xBaZrO_3$ were fabricated by a solid state reaction and their dielectric properties were investigated. For the compositions of x=0.1~0.9, the mixture of $LaAlO_3$ with a rhombohedral structure and $BaZrO_3$ with a cubic was observed when the sintering was conducted at $1500^{\circ}C$, indicating that the solubility of constituent elements was very low and a narrow solid solution region might exist. The large difference of ionic radii between $La^{3+}$ ion (0.136nm, C.N.=12) and $Ba^{2+}$ ion (0.161nm) or $Al^{3+}$ ion (0.0535nm, C.N.=6) and $Zr^{4+}$ ion (0.072nm) might hinder the mutual substitution. Within the compositions of x=0~0.7, the dielectric constant of the mixture increased with the amount of $BaZrO_3$, i.e., x value, which was in good agreement with the logarithmic mixing rule (In $_{r,i}={\Sigma}v_iln\;_{r,i}$). The increase in $BaZrO_3$ doping decreased $Q{\times}f$ value significantly due to the low $Q{\times}f$ value of $BaZrO_3$ itself, a poor microstructure of the mixture with an increased grain boundary area per volume, and defects in the cation and oxygen sub-lattices which were respectively caused by the evaporation of barium during the sintering process and the substitution of Ba on La-site or Al on Zr-site.

• ETRI Journal
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• 제18권1호
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• pp.15-27
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• 1996

The effects of $Nd_2O_3$ and $TiO_2$ addition on the microstructures and microwave dielectic properties of $BaO-Nd_2O_3-TiO_2$ system were investigated. $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_{5}O_{14}$ phases were observed for compositions based on BaO/$Nd_2O_3$ = 1 ratio. The compositions deviated from $BaO/Nd_2O_3=1$ ratio were composed of major phases of $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_5O_{14}$, and the compound of $Nd_2O_3$ and $TiO_2(Nd_2Ti_2O_7)$ or that of BaO and $TiO_2(BaTi_4O_9)$. The microstructure of ceramic with $BaO{\cdot}Nd_2O_3{\cdot}4TiO_2$ composition varied from spherical grains to needlelike grains with increasing sintering temperature. With increasing $Nd_2O_3$, the optimum sintering temperature with maximum density increased, and the dielectric constant(${\varepsilon}_r$) and quality factor(Q) decreased due to the formation of secondary phases. With increasing $TiO_2$, the optimum sintering temperature and the dielectric constant decreased with increased Q value. And the temperature coefficient of resonant frequency, ${\tau}_f$ shifted toward positive direction. The dielectric ceramics with $BaO/Nd_2O_3=1$ showed Q values of above 2000 and dielectric constants of above 80 at 3GHz.