• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.364-367
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• 2018

The phase evolution, microstructure, and microwave dielectric properties of Sr-substituted $Ba(Mg_{0.5}W_{0.5})O_3$ ceramics, i.e., $(Ba_{1-x}Sr_x)(Mg_{0.5}W_{0.5})O_3$ ($0{\leq}x{\leq}0.30$), sintered at $1700^{\circ}C$ for 1 h were investigated. All compositions showed a 1 : 1 ordered perovskite structure. In all the compositions, $BaWO_4$ was detected as the secondary phase. With increasing x in ($Ba_{1-x}Sr_x$) $(Mg_{0.5}W_{0.5})O_3$, the lattice parameter increased linearly, indicating that a substitutional solid solution occurred. All compositions exhibited a dense microstructure. The value of ${\varepsilon}_r$ increased slightly with increasing x. The value of $Q{\times}f_0$ increased with the increase in x up to x = 0.10 and reached a saturated value of about 100,000 GHz. The composition for x = 0.20, i.e., $(Ba_{0.80}Sr_{0.20})(Mg_{0.5}W_{0.5})O_3$, sintered at $1700^{\circ}C$ for 1 h exhibited superior microwave dielectric properties of ${\varepsilon}_r=19.6$, $Q{\times}f_0=99,358GHz$, and ${\tau}_f=0.0ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.212-215
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• 2018

The phase evolution, microstructure, and microwave dielectric properties of $Ba(Mg_{0.5-2x}Y_{2x}W_{0.5-x}Ti_x)O_3$ (x = 0.005~0.05) ceramics sintered at $1,700^{\circ}C$ for 1h were investigated. All compositions exhibited a 1:1 ordered cubic perovskite structure. The field emission scanning electron microscopy image revealed a dense microstructure in all the compositions. As the value of x increased, the lattice parameter, dielectric constant, and quality factor increased. The temperature coefficient of resonant frequency changed from $-19.6ppm/^{\circ}C$ to $-5.9ppm/^{\circ}C$ with increasing x value. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of $Ba(Mg_{0.40}Y_{0.10}W_{0.45}Ti_{0.05})O_3$ were 21.7, 132,685 GHz, and $-5.9ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.356-360
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• 2017

We investigated the phase evolution, microstructure, and microwave dielectric properties of Na- and Zr-doped $Ba(Mg_{0.5}W_{0.5})O_3$ [i.e., ($Ba_{1-2x}Na_{2x})(Mg_{0.5-x}Zr_xW_{0.5})O_3$] ceramics. $BaWO_4$ as a secondary phase was observed in all compositions, and it increased as the dopant concentration increased. All specimens revealed a dense microstructure. For the composition of x=0.01, polyhedral grains were observed. As the dopant concentration increased, the densification and the grain growth were promoted by a liquid phase. The quality factor($Q{\times}f_0$) decreased remarkably, whereas the dielectric constant (${\varepsilon}_r$) tended to decrease as the dopant concentration increased. The dielectric constant, quality factor, and temperature coefficient of the resonant frequency of the composition of x=0.01 sintered at $1,700^{\circ}C$ for 1 h were 18.6, 216,275 GHz, and $-22.0ppm/^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.56 no.4
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• pp.399-402
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• 2019

The phase evolution, microstructure, and microwave dielectric properties of (Ba_1-xNa_x)(Mg_0.5-2xY_2xW_0.5-xTa_x)O₃ (0 ≤ x ≤ 0.05) ceramics were investigated. All compositions exhibited a 1:1 ordered perovskite structure. As the value of x increased, the dielectric constant (ε_r) exhibited a tendency to increase slightly. The quality factor reached the maximum value at x = 0.01. The temperature coefficient of resonant frequency (τ_f) increased from -19.32 ppm/℃ to -5.64 ppm/℃ in the positive direction as x increased. The dielectric constant (ε_r), quality factor (Q × f₀), and temperature coefficient of resonant frequency (τ_f) of the composition x = 0.05, i.e., (Ba_0.95Na_0.05)(Mg_0.4Y_0.1W_0.45Ta_0.05)O₃ were 19.9, 128,553 GHz, and -5.6 ppm/℃, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.210-213
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• 2002

The blue phosphor, $BaMgAl_{10}O_{17}$:$Eu^{2+}$, showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC $O_3$, A $l_2$ $O_3$, MgO and E $u_2$ $O_3$ with Al $F_3$ as a flux. The thermal quenching of BaMgAl $O_{17}$:E $u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_1$ and $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_2$ transition of $Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$. The EPR spectrum also reveals that some part of E $u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for $L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E $u^{2+}$ and 6,984eV of $Eu^{3+}$. The combined X-ray and neutron data suggests that the new phase of EuMgA $l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.20-25
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• 2001

To develop the piezoelectric actuator, the structural, dielectric and piezoelectric properties and electric fieldinduced strain of the ceramics(Pb$\_$1-2/Ba$\_$x/)[Mg$\_$1/2/W$\_$1/2/)$\_$0.03/-Ni$\_$1/3/Nb$\_$2/3/)$\_$0.12/-(Zr$\_$0.5/Ti$\_$0.5/)$\_$0.85/]O$_3$(x=0, 0.01, 0.03, 0.05, 0.07, 0.1) were investigated with the substitution of Ba. The tetragonality of crystal structure and grain size decreased by the substitution of Ba. Curie temperature decreased due to the decrease of the tetragonality, and dielectric constants increased with the substitution of Ba. The coercive field, remnant polarization and electromechanical coupling factor also decreased, whereas the piezoelectric constatns d$\_$33/ and d$\_$31/ were showed the highest value of 430 and 209(x10$\^$-12/C/N), respectively, because of the increase of dielectric constant. The strain induced by 60Hz AC electric field had the maximum value of 204x10$\^$-6/Δℓ/ℓ at the substitution of Ba 3mol%. As the applied electric field approaches to the coercive field, the piezoelectric element is depolarized and the electric field induced strain revealed non-linearity.

• Economic and Environmental Geology
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• v.40 no.6
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• pp.713-726
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• 2007

The Daebong deposit consists of gold-silver-bearing mesothermal massive quartz veins which fill fractures along fault zones($N10{\sim}20^{\circ}W,\;40{\sim}60^{\circ}SW$) within banded gneiss or granitic gneiss of Precambrian Gyeonggi massif. Ore mineralization of the deposit is composed of massive white quartz vein(stage I) which was formed in the same stage by multiple episodes of fracturing and healing and transparent quartz vein(stage II) which is separated by a major faulting event. The hydrothermal alteration of stage I is sericitization, chloritization, carbonitization, pyritization, silicification and argillization. Sericitic zone occurs near and at quartz vein and includes mainly sericite, quartz, and minor illite, carbonates and epidote. Chloritic zone occurs far from quartz vein and is composed of mainly chlorite, quartz and minor sericite, carbonates and epidote. Fe/(Fe+Mg) ratios of sericite and chlorite range 0.36 to 0.59($0.51{\pm}0.10$) and 0.66 to 0.73($0.70{\pm}0.02$), and belong to muscovite-petzite series and brunsvigite, respectively. Calculated $Al_{IV}-Fe/(Fe+Mg)$ diagrams of sericite and chlorite suggest that this can be a reliable indicator of alteration temperature in Au-Ag deposits. Calculated activities of chlorite end member are $a3(Fe_5Al_2Si_3O_{10}(OH){_6}=0.00964{\sim}0.0291,\;a2(Mg_5Al_2Si_3O_{10}(OH){_6}= 9.99E-07{\sim}1.87E-05,\;a1(Mg_6Si_4O_{10}(OH){_6}=5.61E-07{\sim}1.79E-05$. It suggest that chlorite from the Daebong deposit is iron-rich chlorite formed due to decreasing temperature from $T>450^{\circ}C$. Calculated $log\;{\alpha}K^+/{\alpha}H^+,\;log\;{\alpha}Na^+/{\alpha}H^+,\;log\;{\alpha}Ca^{2+}/{\alpha}^2H^+$ and pH values during wall-rock alteration are $4.6(400^{\circ}C),\;4.1(350^{\circ}C),\;4.0(400^{\circ}C),\;4.2(350^{\circ}C),\;1.8(400^{\circ}C),\;4.5(350^{\circ}C),\;5.4{\sim}6.5(400^{\circ}C)\;and\;5.1{\sim}5.5(350^{\circ}C)$, respectively. Gain elements (enrichment elements) during wallrock alteration are $K_2O,\;P_2O_5,\;Na2O$, Ba, Sr, Cr, Sc, V, Pb, Zn, Be, Ag, As, Ta and Sb. Elements(Sr, V, Pb, Zn, As, Sb) represent a potentially tools for exploration in mesothermal and epithermal gold-silver deposits.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.