• 마이크로전자및패키징학회지
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• 제7권3호
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• pp.7-11
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• 2000

공침법을 이용하여 제조한 $SrTiO_3$분말에 $CuO-SiO_2$첨가물을 혼합하여 저전압구동형 SrTiO$_3$세라믹 바리스터 소자를 제조하였다. $CuO-SiO_2$첨가물을 이용한 $SrTiO_3$세라믹 바리스터제조 공정은 복잡한 공정을 단순화시킬 수 있을 뿐만 아니라, 일반적인 소결온도보다 100~$150^{\circ}C$ 낮은 온도에서도 소결이 되었다. 이 바리스터의 비직선계수($\alpha$) 값은 첨가물 5 wt% 혼합하여 $1350^{\circ}C$에서 하소한 시편에서 8.47의 최고값을 나타냈으며, 이때의 구동전압은 7 V 이하로 낮은 구동전압을 가진 바리스터를 제조할 수 있었다.

• 전자공학회논문지A
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• 제30A권5호
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• pp.30-35
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• 1993

We have investigated microwave dielectric properties of TiO$_{2}$ added (Pb$_{1-x}$Ca$_{x}$)ZrO$_{3}$ Ceramics with x=0.33, 0.35, and 0.37 sintered at 1400$^{\circ}C$ for 2 h. For additions of up to 3wt% of TiO$_{2}$ in (Pb$_{0.63}$ Ca$_{0.37}$)ZrO$_{3}$ (x=0.37), TiO$_{2}$ was completely soluble in (Pb, Ca)ZrO3 phase and did not affect the grain size of ceramics. Dielectric constant and temperature coefficient of resonant frequency increased due to the formation of solid solution, whereas Q value decreased linearly as TiO$_{2}$ increased up to 1 wt%. However, the dielectric loss was very high as TiO$_{2}$ exceeded 2 wt%. It was also shown that as Ca ion content in 0.5 wt% TiO$_{2}$ added (Pb$_{1-x}$,Ca$_{x}$)ZrO$_{3}$ decreased from x=0.37 to x=0.33, dielectric constant increased and Q value decreased.

• 한국결정성장학회지
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• 제18권1호
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• pp.22-26
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• 2008

[ $CaCO_3$ ]와 $ZrO_2$를 모체결정으로 하고 Pr을 부활제로, 융제로 $B_2O_3$을 사용하였으며 고상반응법으로 합성하여 $CaZrO_3$ : Pr 적색 축광성 형광체를 제조하였다. XRD 분석을 통하여 시료의 결정상을 확인하였고, PL 검사를 통하여 $480{\sim}570nm$영역과 $590{\sim}700nm$ 영역의 발광 스펙트럼을 관찰하였다. 융제로서 $B_2O_3$을 각각 1%, 5%, 10%를 첨가하여 고상반응법으로 합성하였을 때, 494 nm 에서 발광은 $B_2O_3$의 농도가 1%일 때 가장 높은 강도를 나타냈다. 적색을 나타내는 620 nm에서의 Peak는 $B_2O_3$의 농도가 10%일 때 가장 높은 강도를 나타내었다.

• 한국세라믹학회지
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• 제35권11호
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• pp.1121-1129
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• 1998

Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.

• Nuclear Engineering and Technology
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• 제54권9호
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• pp.3516-3525
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• 2022

The high capture cross-section (𝜎_c) of Gadolinium (Gd-155 and Gd-157) causes reactivity penalty and swing at the initial stage of fuel burnup in Pressurized Water Reactor (PWR). The present study is concerned with the feasibility of the combination of mixed burnable poison with both low and high 𝜎_c as an approach to minimize these effects. Two considered reference designs are fuel assemblies with 24 IBA rods of Gd₂O₃ and Er₂O₃ respectively. Models comprise nuclear fuel with a homogeneous mixture of Er₂O₃, AmO₂, SmO₂, and HfO₂ with Gd₂O₃ as well as the coating of PaO₂ and ZrB₂ on the Gd₂O₃ pellet's outer surface. The infinite multiplication factor was determined and reactivity was calculated considering 3% neutron leakage rate. All models except Er₂O₃ and SmO₂ showed expected results namely higher values of these parameters than the reference design of Gd₂O₃ at the early burnup period. The highest value was found for the model of PaO₂ and Gd₂O₃ followed by ZrB₂ and HfO₂. The cycle burnup, discharge burnup, and cycle length for three batch refueling were calculated using Linear Reactivity Model (LRM). The pin power distribution, energy-dependent neutron flux and Fuel Temperature Coefficient (FTC) were also studied. An optimization of model 1 was carried out to investigate effects of different isotopic compositions of Gd₂O₃ and absorber coating thickness.

• 한국재료학회지
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• 제11권7호
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• pp.545-549
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• 2001

고온 안정성의 유리계로 알려진 회토류 알루미나 규산염계중, Nd$_2$O$_3$-Al$_2$O$_3$-SiO$_2$(NdAS)계 유리의 응용범위를 찾고자 결정화유리를 제조하여 그 물성의 특성을 평가하였다. NdAS에 결정화제로 TiO$_2$를 첨가하여 내부결정화를 유도하여 생성된 결정화유리에 대하여 결정상과 잔류유리의 물리적, 열적, 기계적 물성을 측정하였다. NdAS-TiO$_2$유리계는 열처리와 조성 조건에 따라 생성된 표면 및 내부결정상은 같은 결정상을 갖는 것으로 X선회절의 결과로 확인되었으나, 알려 있지 않은 결정상으로 내부결정의 경우, 원자구성비는 $Nd_{4.6}Si_{7.2}Al_{4.0}Ti_{2.4}O_{32}$이었다. 결정화유리의 선팽창계수는 $5.4~6.2{\times}10^{-6}/^{\circ}C$ 정도로 경정성장이 일어날수록 증가되었다. 결정화유리중의 결정상의 경도와 탄성계수는각 각 12GPa, 220Gpa으로 나타난 것을 고려한다면 내부결정화에 의한 결정화유리의 물성은 고온 구조용 재료로 활용도가 넓을 것으로 본다.

• 한국세라믹학회지
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• 제15권1호
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• pp.3-8
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• 1978

Effects on the sintering of zircon by minor additives such as $Al_2O_3$, MgO and CaO were studied at $1450^{\circ}C$~$1550^{\circ}C$ for 30 minutes. Shrinkage, compressive strength, bulk density and apparent porosity of sintered specimens were measured in relation to content of minor additives and temperature. Mineral constitutions of the sintered specimens were idenified with X-ray diffractometer. And microstructures of the sintered specimens were observed by scanning electron microscope. The results obtained were as follow. 1) Effect ofthe minor additives such as Al2O3, MgO and CaO on the sintering of zircon was related to reaction between added oxide and silica by dissociation of zircon. 2) Zircon did not dissociate at $1550^{\circ}C$, but it did slightly on the specimen added by Al2O3 5 wt% at $1550^{\circ}C$. 3) Sintering of zircon was promoted by the addition of MgO, $(Al_2O_3＋CaO)$ and (MgO＋CaO), then, this phenomenon was due to the formation of liquid phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• 한국세라믹학회지
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• 제34권6호
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• pp.553-560
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• 1997

A fine $\alpha$-Al2O3 powder was prepared by sol-gel process for membrane application. And it was carried out by adding 1.5wt% $\alpha$-Al2O3 powders(mean size : 87 nm) as seeds to the prepared sols and by controlling the heating schedule (the heating rate and the soaking time) to prevent the microstructural change, which occured during $\theta$-to $\alpha$Al2O3 phase transformation. The seeded $\alpha$-Al2O3 particles acted as the heterogeneous nucleation sites for the $\alpha$-Al2O3 nucleation during the transformation of $\theta$- to $\alpha$-Al2O3 and resulted in increasing the driving force of phase transformation to activate the formation of $\alpha$-Al2O3 phase at 82$0^{\circ}C$. By $\alpha$-Al2O3 seeding and controlling of heating condition the phase transformation of $\theta$- to $\alpha$-Al2O3 was accomplished at low temperature and the grain growth process was depressed. Therefore, the unsupported membrane could be fabricated in $\alpha$-Al2O3 . The average diameter of pores in the fabricated membrane was 7 nm and the porosity was 47%.