• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.75-78
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• 2009

Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.43-47
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• 2008

[ $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ ] nano-glass has been prepared by sol-gel method. The mean particle size was 60.3 nm with narrow size distribution. The nano-galss has been used as a sintering aid for the densification of the NiZnCu ferrites. The ferrite was sintered with nano-glass sintering aids at $840{\sim}900^{\circ}C$, 2 h and the initial permeability, quality factor, density, and saturation magnetization were also measured. The initial permeability of 0.5 wt% nano-glass added toroidal sample for NiZnCu ferrites sintered at $900^{\circ}C$ was 193.3 at 1 MHz. The initial permeability and saturation magnetization were increased with increasing annealing temperature. As a result, $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ nano-glass systems were found to be useful as sintering aids for multilayer chip inductors.

• Journal of the Korean Chemical Society
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• v.25 no.5
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• pp.318-324
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• 1981

The effects of$ Fe_2O_3$ aggregation on the sintering of Ba-ferrite (BaFe$_{12}O_{19}$) were studied. $BaCO_3-Fe_2O_3$ mixtures were prepared by partial precipitation mixing and ball-mill mixing method using two different $Fe_2O_3 $powders. Techniques employed were TG, XRD and SEM. X-ray diffraction analysis showed that the over all reaction basically consists of the two consecutive reaction; $BaCO_3 + 6Fe_2O_3\;{\longrightarrow}\;BaFe_2O_3 + 5Fe_2O_3 + CO_2{\uparrow}\;BaFe_2O_4 + 5Fe_2O_3 \;{\longrightarrow}\;BaFe_{12}O_{19}$ It is also shown that the aggregation state of $Fe_2O_3$ raw materials, as well as the mixing method, has a remarkable effect on solid state reaction between $BaCO_3\;and\;Fe_2O_3$.

• Journal of the Korean Ceramic Society
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• v.34 no.11
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• pp.1129-1138
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• 1997

Al2O3/20 vol%YAG composite containing equiaxed grains and Al2O3/20 vol%LaAl11O18 composite containing elongated grains were fabricated using Al2O3-Y2O3 composition and Al2O3-La2O3 composition, respectively, by hot-pressing. In order to investigate the influence of microstructural control of second phase on toughening effect of toughened ceramic composites, AE (acoustic emission) measurements have been coupled with fracture toughness experiments(SENB and SEPB method). A separation of the fracture toughness and analysis of toughening mechanism was possible using the AE technique. The fracture toughness of hot-pressed materials was estimated to be 3.2 MPam0.5 for monolithic alumina, 4.7 MPam0.5 for Al2O3/20 vol%YAG composite and 6.2 MPam0.5 for Al2O3/20 vol%LaAl11O18 composite. In monolithic Al2O3, toughening does not occur as a result of either microcracking or grain bridging, whereas, composites exhibit toughening effects by both microcracking in the frontal zone and gain bridging in the wake zone, resulting in an improvement of fracture toughness as compared with monolithic Al2O3. The fracture toughness of Al2O3/20 vol%LaAl11O18 composite is higher than that of Al2O3/20 vol%YAG composite. It may be attributed to the elongated microstructure of Al2O3/20 vol%LaAl11O18 composite, resulting relatively greater bridging effect.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.10
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• pp.831-838
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• 2009

In order to evaluate a removal characteristic of diclofenac, ibuprofen and naproxen by oxidizing agents, $Cl_2,\;O_3$ and $O_3/H_2O_2$ are used as oxidants in this study. In case of that $Cl_2$ is used for oxidizing pharmaceuticals, ibuprofen is not removed entirely at $Cl_2$ dose range of 0.5~5.0 mg/L for 60 minutes, however, removal tendency of diclofenac and naproxen are so obviously at $Cl_2$ dose higher than 0.5 mg/L. In addition, as $Cl_2$ dose and contact time are increased, the removal rate of diclofenac and naproxen is enhanced. When $O_3$ is used as oxidizing agent, ibuprofen is not eliminated at $O_3$ dose range of 0.2~5.0 mg/L. On the contrary, 72~100% of diclofenac and 49~100% of naproxen are removed at $O_3$ dose of 0.2~5.0 mg/L. From experiments using $O_3/H_2O_2$ as an oxidant, we can find that $O_3/H_2O_2$ is much more effective than $O_3$ only for removal of diclofenac and naproxen. Moreover, the efficiency is raised according to increase of $H_2O_2$ dose, however, experiments using $O_3/H_2O_2$ show that oxidation of pharmaceuticals is less effective as $H_2O_2$ to $O_3$ ratio increased to above approximately 1.0. On reaction rate constant and half-life of diclofenac, ibuprofen and naproxen depending on $Cl_2$, $O_3$ and $O_3/H_2O_2$ dose, an oxidation of pharmaceuticals by $Cl_2$ and $O_3$ particularly has a comparatively high reaction rate constant and short half-life comparing $O_3/H_2O_2$. From above results, we can fine that diclofenac and naproxen can be easily eliminated in oxidation processes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.103-109
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• 2020

The effect of La₂O₃ addition on the crystalline phase, microstructure, and dielectric properties of BaTiO₃ has been studied as a function of the amounts of La₂O₃. 0.3 mol% TiO₂-excess BaTiO₃ powder was synthesized by solid-state reaction, and then the powder compacts with various amounts of La₂O₃ were sintered at 1250℃ for 2 hours. Room temperature XRD showed changes in the lattice parameters and a decrease of tetragonality (c/a) as the amounts of La₂O₃ increased. It can be explained that the phase transition from tetragonal to cubic phase occurred because La³⁺ replaced Ba²⁺ site, which increased the instability of the tetragonal phase. As La₂O₃ was added over 0.1 mol%, the critical driving force for growth (Δg_c) increased over maximum driving force (Δg_max). As the result, the grain size decreased with La₂O₃ addition. Dielectric constant decreased as the amounts of La₂O₃ increased, which was analyzed with crystal structure and microstructure.

• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.231-236
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• 1999

Several series of morphologically controlled $MoO_3$/$SiO_2$ catalysts were prepared, characterized, and tested for hydrodesulfurization (HDS) of dibenzothiophene (DBT) activity. Molybdenum surface loaded with 4.0 atoms $Mo/nm^2$ was prepared as sintered hexagonal and sintered orthorhombic, as well as a novel "well dispersed hexagonal" phase. Characterization by XRD, Raman, and $O_2$ chemisorption results reveals that the dispersion of $MoO_3$ over silica depends on the final $MoO_3$ phase in the order of; sintered hexagonal < sintered orthorhombic < dispersed hexagonal phase. Temperature programmed reduction (TPR) results show that both bulk and dispersed microcrystalline of $MoO_3$ reduce to $MoO_2$ at $650^{\circ}C$ and to Mo metal at $1000^{\circ}C$. HDS of DBT was performed in a differential reactor at 30 atm over the temperature range $350{\sim}500^{\circ}C$. Activity of $MoO_3$/$SiO_2$ toward HDS of DBT is proportional to dispersion.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.35-40
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• 1985

The composition of the base glass was determined to be $Na_2O$ 15, $Fe_2O_3$ 35, $B_2O_3$ 0~20, $P_2O_5$ 30~50 by mole percent. The heating temperature for nucleation was determined by means of thermal expansion curve. Crystalline phases were investigated by X-ray diffraction method and I.R Spectra. Electrical conductivities of glass spec-imens were observed in the temperature range 25~20$0^{\circ}C$ The activation energies of these specimens were caculated. The results obtained were as follows : 1) The limit composition of the melts 15mol% $Na_2O$ 35mole% $Fe_2O_5$ 20mole% $B_2O_3$ 30mole% $P_2O_5$ was able to be formed into desired shapes during cooling, . 2) In the measurement of d. c conductivity($\delta$) on the glasses in the system $15Na_2O-35Fe_2O_3$-$B_2O_3$-(50-x) $P_2O_5$ the values decreased by replacing 5 mole% $P_2O_5$ with $B_2O_3$ 3) The d. c conducties of heat treated samples were increased by replacing $P_2O_5$ with $B_2O_3$ 4) $B_2O_3$ contributed to precipitate crystals such as${\gamma}$-$Fe_2O_3$ $Fe_3O_4$ which had the advantage of electronic conduction in heat treated samples. 5) The slope plotted Log($\delta$) versus 1/T in this glass system was linear in the measured temperature range.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.313-318
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• 2013

In order to investigate the effect of $V_2O_5$ loading of $V_2O_5-WO_3/TiO_2$ catalyst on the NO reduction and the formation of $N_2O$, the experimental study was carried out in a differential reactor using the powder catalyst. The NO reduction and the ammonia oxidation were, respectively, investigated over the catalysts compose of $V_2O_5$ content (1~8 wt%) based on the fixed composition of $WO_3$ (9 wt%) on $TiO_2$ powder. $V_2O_5-WO_3/TiO_2$ catalysts had the NO reduction activity even under the temperature of $200^{\circ}C$. However, the lowest temperature for NO reduction activity more than 99.9% to treat NO concentration of 700 ppm appeared at 340 with very limited temperature window in the case of 1 wt% $V_2O_5$ catalyst. And the temperature shifted to lower one as well as the temperature window was widen as the $V_2O_5$ content of the catalyst increased, and finally reached at the activation temperature ranged $220{\sim}340^{\circ}C$ in the case of 6 wt% $V_2O_5$ catalyst. The catalyst of 8 wt% $V_2O_5$ content presented lower activity than that of 8 wt% $V_2O_5$ content over the full temperature range. NO reduction activity decreased as the $V_2O_5$ content of the catalyst increased above $340^{\circ}C$. The active site for NO reduction over $V_2O_5-WO_3/TiO_2$ catalysts was mainly related with $V_2O_5$ particles sustained as the bare surface with relevant size which should be not so large to stimulate $N_2O$ formation at high temperature over $320^{\circ}C$ according to the ammonia oxidation. Currently, $V_2O_5-WO_3/TiO_2$ catalysts were operated in the temperature ranged $350{\sim}450^{\circ}C$ to treat NOx in the effluent gas of industrial plants. However, in order to save the energy and to reduce the secondary pollutant $N_2O$ in the high temperature process, the using of $V_2O_5-WO_3/TiO_2$ catalyst of content $V_2O_5$ was recommended as the low temperature catalyst which was suitable for low temperature operation ranged $250{\sim}320^{\circ}C$.