• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.7-11
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• 2000

The low-voltage driven $SrTiO_3$ceramic varistor device was fabricated from $SrTiO_3$ powders prepared by co-precipitation method with $CuO-SiO_2$additives. Compare with conventional process, this process has advantages such as the reduction of the sintering temperature of $SrTiO_3$ ceramics by 100-$150^{\circ}C$ and the simplification of processing procedure. The non-linear coefficient value ($\alpha$) of the varistor showed 8.47 when it was sintered at $1350^{\circ}C$ for 2 h with 5 wt% additives in reducing atmosphere of 5% $H_2/N_2$ mixed gas. The low-voltage driven $SrTiO_3$ceramic varistor was obtained which has a breakdown voltage as low as 7 V.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.5
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• pp.30-35
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• 1993

We have investigated microwave dielectric properties of TiO$_{2}$ added (Pb$_{1-x}$Ca$_{x}$)ZrO$_{3}$ Ceramics with x=0.33, 0.35, and 0.37 sintered at 1400$^{\circ}C$ for 2 h. For additions of up to 3wt% of TiO$_{2}$ in (Pb$_{0.63}$ Ca$_{0.37}$)ZrO$_{3}$ (x=0.37), TiO$_{2}$ was completely soluble in (Pb, Ca)ZrO3 phase and did not affect the grain size of ceramics. Dielectric constant and temperature coefficient of resonant frequency increased due to the formation of solid solution, whereas Q value decreased linearly as TiO$_{2}$ increased up to 1 wt%. However, the dielectric loss was very high as TiO$_{2}$ exceeded 2 wt%. It was also shown that as Ca ion content in 0.5 wt% TiO$_{2}$ added (Pb$_{1-x}$,Ca$_{x}$)ZrO$_{3}$ decreased from x=0.37 to x=0.33, dielectric constant increased and Q value decreased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.22-26
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• 2008

Red long persistent phosphors of $CaZrO_3$ : Pr was synthesized by a solid reaction method. $CaCO_3\;and\;ZrO_2$ were used as hosting materials and Pr was doped as luminescence center element, and $B_2O_3$ was used as flux. The XRD pattern confirmed crystalline phase of the phosphor, and photoluminescence investigation showed emission spectrum at $480{\sim}570nm\;and\;590{\sim}700nm$. Phosphor samples were synthesized with $B_2O_3$ flux concentration of 1, 5, 10%, and luminescent peak of maximum intensity at 494 nm was obtained for 1% $B_2O_3$. Luminescent peak of red color at 620 nm was of highest intensity for 10% $B_2O_3$.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1121-1129
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• 1998

Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.

• Nuclear Engineering and Technology
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• v.54 no.9
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• pp.3516-3525
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• 2022

The high capture cross-section (𝜎_c) of Gadolinium (Gd-155 and Gd-157) causes reactivity penalty and swing at the initial stage of fuel burnup in Pressurized Water Reactor (PWR). The present study is concerned with the feasibility of the combination of mixed burnable poison with both low and high 𝜎_c as an approach to minimize these effects. Two considered reference designs are fuel assemblies with 24 IBA rods of Gd₂O₃ and Er₂O₃ respectively. Models comprise nuclear fuel with a homogeneous mixture of Er₂O₃, AmO₂, SmO₂, and HfO₂ with Gd₂O₃ as well as the coating of PaO₂ and ZrB₂ on the Gd₂O₃ pellet's outer surface. The infinite multiplication factor was determined and reactivity was calculated considering 3% neutron leakage rate. All models except Er₂O₃ and SmO₂ showed expected results namely higher values of these parameters than the reference design of Gd₂O₃ at the early burnup period. The highest value was found for the model of PaO₂ and Gd₂O₃ followed by ZrB₂ and HfO₂. The cycle burnup, discharge burnup, and cycle length for three batch refueling were calculated using Linear Reactivity Model (LRM). The pin power distribution, energy-dependent neutron flux and Fuel Temperature Coefficient (FTC) were also studied. An optimization of model 1 was carried out to investigate effects of different isotopic compositions of Gd₂O₃ and absorber coating thickness.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.545-549
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• 2001

Glass-ceramics were prepared and evaluated for the properties to expand the scope of application of the rare earth aluminosilicate glasses, A glass-ceramic added with $TiO_2$as a nucleating agent, which was crystallized internally and it was characterized for physical, thermal and mechanical properties of crystal and residual glass in the glass-ceramic, X-ray diffractometer reveals an unknown crystal as $Nd_{4.6}Si_{7.6}Al_{4.0}Ti_{2.4}O_{32}$ which was found in surface and internal crystals dependent on composition and heat treatments. The thermal expansion coefficients of glass-ceramics were $5.4~6.2{\times}10^{-6}/^{\circ}C$, which increased with increasing crystal growth. Considering that the hardness and the elastic constant of crystal in glass-ceramics are 12GPa and 220GPa, respectively, the application of the glass-ceramics would be applicable for structural materials at elevated temperature.

• Journal of the Korean Ceramic Society
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• v.15 no.1
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• pp.3-8
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• 1978

Effects on the sintering of zircon by minor additives such as $Al_2O_3$, MgO and CaO were studied at $1450^{\circ}C$~$1550^{\circ}C$ for 30 minutes. Shrinkage, compressive strength, bulk density and apparent porosity of sintered specimens were measured in relation to content of minor additives and temperature. Mineral constitutions of the sintered specimens were idenified with X-ray diffractometer. And microstructures of the sintered specimens were observed by scanning electron microscope. The results obtained were as follow. 1) Effect ofthe minor additives such as Al2O3, MgO and CaO on the sintering of zircon was related to reaction between added oxide and silica by dissociation of zircon. 2) Zircon did not dissociate at $1550^{\circ}C$, but it did slightly on the specimen added by Al2O3 5 wt% at $1550^{\circ}C$. 3) Sintering of zircon was promoted by the addition of MgO, $(Al_2O_3＋CaO)$ and (MgO＋CaO), then, this phenomenon was due to the formation of liquid phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.553-560
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• 1997

A fine $\alpha$-Al2O3 powder was prepared by sol-gel process for membrane application. And it was carried out by adding 1.5wt% $\alpha$-Al2O3 powders(mean size : 87 nm) as seeds to the prepared sols and by controlling the heating schedule (the heating rate and the soaking time) to prevent the microstructural change, which occured during $\theta$-to $\alpha$Al2O3 phase transformation. The seeded $\alpha$-Al2O3 particles acted as the heterogeneous nucleation sites for the $\alpha$-Al2O3 nucleation during the transformation of $\theta$- to $\alpha$-Al2O3 and resulted in increasing the driving force of phase transformation to activate the formation of $\alpha$-Al2O3 phase at 82$0^{\circ}C$. By $\alpha$-Al2O3 seeding and controlling of heating condition the phase transformation of $\theta$- to $\alpha$-Al2O3 was accomplished at low temperature and the grain growth process was depressed. Therefore, the unsupported membrane could be fabricated in $\alpha$-Al2O3 . The average diameter of pores in the fabricated membrane was 7 nm and the porosity was 47%.