• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.26-29
• /
• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in $Cl_2(20)/CF_4(20)/Ar(80)$. As rf power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass sperometry.

• 열처리공학회지
• /
• 제25권6호
• /
• pp.279-282
• /
• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

• 태양에너지
• /
• 제20권2호
• /
• pp.55-65
• /
• 2000

이온빔 스퍼터링을 이용하여 Indium tin oxide (ITO)박막을 증착하였다. Ar 가스만을 이용하여 플라즈마를 형성한 경우와 $O_2$를 첨가한 경우에 대해 기판온도를 상온에서 $200^{\circ}C$까지 증가시키면서 온도의 영향을 관찰하였으며 이온빔 에너지의 변화가 박막의 특성에 미치는 영향을 관찰하였다. Ar 이온만으로 증착한 ITO 박막은 domain 구조를 보였으며 Ar+$O_2$ 이온으로 증착한 경우 grain 구조를 나타내었다. Ar 이온만으로 증착된 ITO박막의 전기 비저항의 최소값은 $100^{\circ}C$ 기판온도에서 $1.5\times10^{-4}{\Omega}cm$ 값을 보였으며 산소 첨가의 경우에는 $150^{\circ}C$에서 $4.3\times10^{-4}{\Omega}cm$이었다. 모든 박막이 $100^{\circ}C$이상의 기판 온도에서 가시광 영역에서의 투과도는 80%이상의 값을 보였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.938-941
• /
• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• 전기학회논문지
• /
• 제56권2호
• /
• pp.349-354
• /
• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2015년도 춘계학술대회 논문집
• /
• pp.143-144
• /
• 2015

Here we report the Ar-ion milling rates of ultrathin Si and GaAs single crystals. The thickness change is measured using convergent beam electron diffraction (CBED) technique with the help of Bloch wave simulation method. This study suggests the experimental procedures to determine the references for an etching rate to reduce a sample thickness or to remove the damaged sample surface using Ar-ion source.

• 한국표면공학회지
• /
• 제26권5호
• /
• pp.225-234
• /
• 1993

Titanium nitride coatings were deposited onto SUS304 stainless steel substrates pretreated by mechanical scrubbing, chemical etching at 50% HCl solution and Ar ion etching. Adhesion strength were measured by scratch tester and confirmed by SEM with EDS. Adhesion strength of Ar ion etched substrate was 10 to 15 times higher than that of mechanical scrubbed or chemical etched substrate. Ar ion etching brought about an uniform and fine spherical shaped surface, while chemical etching gave rise to a rough and irregular surface on SEM micrograph. It was suggested that higher adhesion strength might be caused by anchoring effect of Ar ion etched surface prior to TiN deposition.

• 한국재료학회지
• /
• 제16권6호
• /
• pp.367-372
• /
• 2006

Polytetrafluoroethylene (PTFE) surface was modified for improving hydrophilicity by ion irradiation in environmental gas of $N_2$ and $NH_3$, respectively. The water contact angle onto the PTFE surface increased from $104{\circ}$ to over $140{\circ}$ by Ar ion irradiation in $N_2$ gas. In the case of $NH_3$ as environmental gas, there were a slight increase of contact angle from ion dose of $1{\times}10^{15}\;to\;5{\times}10^{15}\;ions/cm^2$, and its dramatic decrease to the value of 35o at the conditions of ion dose higher than $1{\times}10^{16}\;ions/cm^2$. It was found from SEM results that the surface morphology of PTFE was changed into one with filament structure after Ar ion irradiation in $N_2$ gas environments. On the contrary, Ar ion irradiation in $NH_3$ gas condition induced the PTFE surface with network structure. Hydrogen ion irradiation resulted in a little change of PTFE surface morphology, comparing with the case of Ar ion irradiation. The water contact angle of hydrogen ion irradiated PTFE surface in reactive gas decreased with increment of ion dose. Hydrogen ion irradiation could improve hydrophilicity with little change of surface morphology. It might be considered from FT-IR results that the improvement in wettability of PTFE surface by ion irradiation in $N_2$ and $NH_3$ gases could be due to the hydrophilic groups of NHx bonds.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
• /
• pp.132-132
• /
• 1994

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1993년도 춘계학술발표회
• /
• pp.144-144
• /
• 1993