• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.9
• /
• pp.714-719
• /
• 2001

SrBi$_2$Ta$_2$$O_{9}$ thn films were etched in inductively coupled Cl$_2$/CF$_4$/Ar plasma. THe maximum etch rate was 1060 $\AA$/min at a Cl$_2$/(Cl$_2$+CF$_4$+Ar)=0.2. The 20% additive Cl$_2$ into CF$_4$/Ar plasma decreased carbon and fluorine radicals, but increased Cl radicals. Sr was effectively removed by reacting with Cl radical because the boiling point of SrCl$_2$(125$0^{\circ}C$) is lower than that of SrF$_2$(246$0^{\circ}C$). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching profile was evaluated by using scanning electron microscopy.y.

• Journal of Radiation Protection and Research
• /
• v.13 no.2
• /
• pp.1-8
• /
• 1988

The energy losses of ${\alpha}$-particle with 3 to 5.4 MeV energy were measured as a function of gas absorber thickness and ${\alpha}$-particle energy in three light gaseous media; He, Ar, and $N_2$. The stopping powers and stopping cross-sections were determined by analyzing these data. For Ar gas, the experimental values are very well consistent with the corresponding values of Srivastava's stopping-power theory with the condition of the completely and partially stripped ion. For $N_2$ and He gases, these experimental values express the inconsistencies of about $13{\sim}36%$ and $27{\sim}28%$, respectively.

• Korean Journal of Materials Research
• /
• v.31 no.3
• /
• pp.162-171
• /
• 2021

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

• Journal of Surface Science and Engineering
• /
• v.37 no.4
• /
• pp.220-225
• /
• 2004

A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of $4${\times}$10^{11}$＃/㎤. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of $1\AA$/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed $Ar^{+}$ beam was detected at the $2^{nd}$ QMS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.6
• /
• pp.547-551
• /
• 2006

We studied liquid crystal (LC) alignment with ion beam (IB) on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide surface using obliquely ion beam (IB) exposure with new IB type equipment. A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-LCD on polyimide surface. Also, the EO characteristics of the ion-beam-aligned TN-LCD on a polyimide (PI) surface with ion beam exposure using new type IB equipment is same or more superior than ion-beam-aligned TN-LCD on a polyimide (PI) surface with ion beam exposure using Kaufman-type Ar ion gun.

• Proceedings of the Optical Society of Korea Conference
• /
• 2001.02a
• /
• pp.192-193
• /
• 2001

높은 파장 선택도를 가지고 광신호를 제어하는 광섬유격자는 단주기 격자, 장주기 격자, 첩 격자 등이 있는데 이러한 격자의 제작 기술은 여러 응용분야에서 활용도 높은 소자를 제작하는 데 이용되어져 왔다. 본 논문에서는, 주어진 반사 파장 내에 매우 좁은 선폭의 여러 투과 스펙트럼 밴드를 가지며 그 응용성이 다양한 격자 제작을 목표로 이미 수행되어진 위상천이 격자의 시뮬레이션[1]을 토대로 $\pi$위상천이 격자를 제작하였다. (중략)

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1512-1514
• /
• 2001

In this work, PZT thin films were etched as a function of $Cl_2$/Ar and additive $CF_4$ into $Cl_2$(80%)/Ar(20%). The etch rates of PZT films were 1600 $\AA$/min at $Cl_2$(80%)/Ar(20%) gas mixing ratio and 1973 $\AA$/min at 30% additive $CF_4$ into $Cl_2$(80%)/Ar(20%). Therefore the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. From XPS and SIMS analysis, metal halides and C-O, FCI and $CClF_2$ were detected. The etching of PZT films in Cl-based plasma is primarily chemically assisted ion etching and the remove of nonvolatile etch byproducts is the dominant step. Consequently, we suggest that the increase of Cl radicals and the volatile oxy-compound such as $CO_y$ are made by adding $CF_4$ into $Cl_2$/Ar plasma. Therefore, the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. The etched profile of PZT films was obtained above 70$^{\circ}$ by the SEM micrograph.

• YAKHAK HOEJI
• /
• v.40 no.2
• /
• pp.135-140
• /
• 1996

Ion-selective poly(vinyl chloride)(PVC) membrane electrodes for the determination of the calcium antagonist verapamil and its pharmaceutical preparations were described. Verapam il-superchrome garnet Y(SGY), lumogallion(LG), acid red 97(AR97), Dragendorff(DD) and Meyer reagent ion pairs were inverstigated as an electroactive compound for membrane electrode. Stable potentiometric response was obtained with azo dye at pH 6.5-4.0 and with DD, and Meyer reagent at pH 6.5-3.0. The best plasticizer was 49w/w% 2-nitrophenyl octyl ether for azo dye, and 65.3w/w% tri(n-butyl) citrate for DD and Meyer reagent. Potentiometric response slopes of optimized membrane electrodes based on SGY, LG, AR97, DD, and Meyer complex for verapamil were 52.49, 54.88, 50.81, 54.13 and 49.31 mV/dec., respectively. Lower limits of linear range were $1.0{\times}10^6M$ for SGY, LG, and AR97, while those for DD and Meyer reagent were $4{\times}10^{-6}M$. Detection limits for all these electrodes were $1{\times}10^{-5}M,\;4{\times}10^{-6}M,\;1.8{\times}10^{-6}M,\;8{\times}10^{-7}M,\;and\;1{\times}10^{-6}M$ with relative standard deviation of 2.56, 3.6, 3.96, 2.56, 3.20%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.624-627
• /
• 2001

Two kinds of Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$, the sintering samples and zone melting samples, were heat treated under pure Ar at 95$0^{\circ}C$. The substitution of Nd ion for Ba ion in the Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ before and after the heat treatment were investigated by XRD. In order to know the effects of the heat treatment, the T$_{c}$ and J$_{c}$ of samples with the heat treatment and those without the heat treatment by Ar were comparatively studied. The results show that the substitution of Nd for Ba decreased, T$_{c}$, and J$_{c}$ increased after the treatment under Ar at 95$0^{\circ}C$. The Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ samples were oxygenated under pure oxygen at 30$0^{\circ}C$. From the XRD pattern it was found that the sample with x< 0.4 could transfer from tetragonal phase to orthorhombic phase after the oxygenation, but the sample with x>0.4 could not make the phase transition even after a long time oxygenation.ion even after a long time oxygenation.ation.n.ation.ation.

• Proceedings of the KSME Conference
• /
• 2004.04a
• /
• pp.1505-1509
• /
• 2004

A novel technique for fine particle beam focusing under the atmospheric pressure is introduced using a radiation pressure assisted aerodynamic lens. To introduce the radiation pressure in the aerodynamic focusing system, a 25 mm plano-convex lens having 2.5 mm hole at its center is used as an orifice. The particle beam width is measured for various laser power, particle size, and flow velocity. In addition, the effect of the laser characteristics on the beam focusing is evaluated comparing an Ar-Ion continuous wave laser and a pulsed Nd-YAG laser. For the pure aerodynamic focusing system, the particle beam width was decreased as increasing particle size and Reynolds number. For the particle diameter of 0.5 ${\mu}m$, the particle beam was broken due to the secondary flow at Reynolds number of 694. Using the Ar-Ion CW laser, the particle beam width becomes smaller than that of the pure aerodynamic focusing system about 16 %, 11.4 % and 9.6 % for PSL particle size of 2.5 ${\mu}m$, 1.0 ${\mu}m$, and 0.5 ${\mu}m$ respectively at the Reynolds number of 320. Particle beam width was minimized around the laser power of 0.2 W. However, as increasing the laser power higher than 0.4 W, the particle beam width was increased a little and it approached almost a constant value which is still smaller than that of the pure aerodynamic focusing system. The radiation pressure effect on the particle beam width is intensified as Reynolds number decreases or particle size increases relatively. On the other hand, using 30 Hz pulsed Nd-YAG laser, the effect of the radiation pressure on the particle beam width was not distinct unlike Ar-Ion CW laser.