• Proceedings of the KWS Conference
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• 2010.05a
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• pp.20-20
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• 2010

GTA (Gas Tungsten Arc)용접은 불활성 분위기에서 용접이 이루어지기 때문에 타 아크용접법에 비해 용접부 품질이 우수하여 고품질이 요구되는 산업분야에 널리 이용되고 있다. 하지만 스테인리스강으로 pipe를 제조하기 위해 GTA 용접을 적용할 경우, Laser 및 고주파 용접 (HFIW)에 비해 용접부 품질 및 용접속도가 낮기 때문에 pipe를 제조하는 산업에서 적용에 제한을 받고 있다. 하지만, GTA는 laser 혹은 HFIW에 비해 가격이 1/10수준으로 낮고, 용접부 gap tolerance 및 용접면 관리범위가 넓은 장점이 있기 때문에 GTA의 용접속도 및 용접품질을 향상시키기 위한 연구가 꾸준히 진행되고 있다. 일반적으로 스테인리스강 GTA용접 시 용접속도를 향상시키기 위해, 모재의 성분 제어 (합금성분 최적화-Al, S, Se, O등), Flux 도포 기술 (산화물을 용접전에 도포하여 용접속도 향상) 및 혼합보호가스 적용 등이 있다. 스테인리스강 용접 시 보호가스로는 용접부 품질을 확보하기 위해 Ar을 주로 사용하고 있다. 하지만 용입 특성을 향상시키기 위해 아크의 온도를 높일 수 있는 He, 혹은 $H_2$ gas를 단독 혹은 혼합하여 사용하고 있다. 오스테나이트계 스테인리스의 경우 용입특성을 향상시키기 위해 Ar에 $H_2$를 2~10%정도 혼합하여 사용하고 있다. 페라이트계 스테인리스강은 수소에 대한 고용도가 상대적으로 작아 용접부 수소 취화를 일으킬 수 있기 때문에 적용에 제한을 받고 있어 그 대안으로 산소를 극히 소량을 혼합하여 용입성 향상에 대한 연구가 보고 되고 있다. 따라서 본 연구에서는 페라이트계 스테인리스강의 용입특성을 향상시킬 목적으로 Ar에 산소를 미량 첨가 (1%미만) 하여 용접전류 및 산소 함량에 따른 용입특성의 변화에 대해 연구하였다. 또한 기계적인 물성 및 부식특성을 평가하였고, 최종적으로 실용화 가능성을 파악하기 위해 용접전극의 수명 테스트를 실시하였다. 실시한 결과, 산소가 첨가량 증가 할수록 용입특성은 상승하였으며, 기계적인 물성 또한 산소를 첨가하지 않은 경우에 비해 거의 유사한 값을 얻을 수 있었다, 하지만 산소함량이 증가 할수록 전극의 수명은 감소하여 교체주기가 증가함을 알 수 있다. 본 연구를 통해 얻어진 기술을 상용화시키기에는 극복해야할 문제가 있지만, 소재 합금성분 설계 시 용접생산성 향상위한 산소성분 범위를 제시할 수 있으리라 판단된다.

• Journal of Welding and Joining
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• v.15 no.6
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• pp.57-65
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• 1997

A study was undertaken to determine the influence of welding variables such as shielding and plasma gases, torch standoff, travel speed and heat input, etc. on the quality of plasma arc welds in Zircaloy-4 sheet, 2mm thick. Effect of shielding gases and their flow rates on the mechanical properties of Zircaloy-4 welds by plasma arc welding were determined in terms of tensile, bardness and bend tests. The microstructure and fracture surface of Zircaloy-4 welds were investigated by optical and scanning electron microscopies. In addition, the causes of porosity and undercut in plasma arc welds of Zircaloy-4 were also investigated. Zircaloy-4 weld bead width and depth by helium shielding gas showed a wider and deeper than those by argon. It was found that Zircaloy-4 welds with shielding gas of helium did dxhibit a little smoother and uniform weld beads than those with shielding gas of argon. It was also found that the optimum gas flow rates for Zircaloy-4 welding were 0.45l/min for plasma gas with Ar and 4.5 - 6 l/min for shielding gas with He. In addition, there was no big difference in the microstructure and fracture surface of the weld metals made by either Ar shielding gas or He shielding gas.

• Journal of the korean Society of Automotive Engineers
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• v.5 no.4
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• pp.47-61
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• 1983

In this paper the simulation of a thermodynamic power cycle for a 4-stroke, single-cylinder, spark-ignition engine was studied. In this simulation the cylinder volume was restricted to two zones, a burnt and an unburnt zone, and the convective heat transfer from cylinder contents to surroundings was considered. The chemical species in burnt gas considered was 12 species including H$_{2}$O, H$_{2}$, OH, H, N$_{2}$, NO, N, CO$_{2}$, CO, $O_{2}$, O and Ar. Using this model, computer program for compression, ignition and expansion processes was composed and pressure, temperature and composition of cylinder gas at each crank angle were computed. The composition of CO$_{2}$, CO, $O_{2}$ in the burnt gas when exhaust valve opens, the maximum temperature, the maximum flame speed and the combustion duration were also computed as a function of equivalence ratio. The relation between burnt mass fraction and burnt volume fraction was also computed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.1085-1091
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• 1995

Molybdenum disilicide (MoSi2) was synthesized from Mo, MoO3, Si and Al powders by self-propagating high temperature synthesis (SHS). The effect of processing parameters such as Mo/MoO3 molar ratio, Ar gas pressure in the reactor and pressing pressure of compacts in synthesis of MoSi2 were investigated. h-MoSi2 was transformed into t-MoSi2 with increasing the Mo/MoO3 mole ratio, and only t-MoSi2 phase was identified above 3.5 : 1 (molar ratio). The synthesized phases did not change with the variation of Ar gas pressure and pressing pressure of compacts. It was found that the combustion temperature was above 2,50$0^{\circ}C$. The products were separated into MoSi2 (s) and $\alpha$-Al2O3 by the difference of their specific grativities. Bending strength, hardness and density of sintered specimen exhibited 82 MPa, 5.368 GPa and 5.43 g/㎤, respectively.

• Journal of Surface Science and Engineering
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• v.38 no.5
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• pp.202-206
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• 2005

Nitriding treatments were conducted on tool steel (SKD 61) at a temperature of $500^{\circ}C$ for 5 hr using high vacuum direct current (DC) plasma, with ammonia and argon as source gases. The structural and compositional changes produced in the nitrided layers by applying different ratios of Ar to $NH_{3}\;(n_{Ar}/n_{NH3}) were investigated using glancing x-ray diffraction (GXRD), optical microscopy, atomic force microscopy (AFM), micro-Vickers hardness testing, and pin-on-disc type tribometer. Nitriding case depths of around of $50{\mu}m$ were produced, varying slightly with different ratios of $n_{Ar}/n_{NH3}. It was found that the specimen surface hardness was 1150 Hv with $n_{Ar}/n_{NH3}=1, increasing to a maximum value of 1500 Hv with $n_{Ar}/n_{NH3}=5. With a further increase in ratio to $n_{Ar}/n_{NH3}=10, the surface hardness of the specimen reduced slightly to a value of 1370 Hv. These phenomena were caused by changes of the crystallographic structure of the nitride layers, i.e the $\gamma'-Fe_{4}N$ phase only was observed in the sample treated with $n_{Ar}/n_{NH3}$=1, and the intensity of the $\gamma'-Fe_{4}N$ phase were reduced but new phase of $\varepsilon'-Fe_{3}N$, which was known as a high hardness, with increasing $n_{Ar}/n_{NH3}. Also, the relative weight loss of counterface of the pin-on-disc with unnitrided steel was 0.2. And that of nitrided steel at a gas mixture ($n_{Ar}/n_{NH3}) of 1, 5, 7, and 10 was 0.4, 0.7, 0.6, and 0.5 mg, respectively. This means that the wear resistance of the nitrided samples could be increased by a factor of 2 at least than that of unnitrided steel.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.223-224
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• 2009

본 연구에서는 $Cl_2$/Ar 기반의 플라즈마 식각에 $N_2$가스를 첨가하여 ZnO 박막을 식각 하였을 때 관찰된 ZnO 박막의 식각 특성에 관하여 연구 하였다. ZnO 박막 식각 실험은 RF 800 W, bias power 400 W, 공정 압력 15 mTorr를 기준으로 하였으며 가스 혼합 비율로는 최적의 식각률을 보여주는 $Cl_2$/Ar=8:2 비율에서 실행하였다. 연구의 목적인 첨가 가스 $N_2$를 $Cl_2$ (80%)/Ar (20)%에 5 sccm 씩 첨가하여 20 sccm 까지 증가 시켜 실험 하였다. $N_2$ 가스가 15 sccm 첨가되었을 때 식각률 95.9 nm/min로 기존 $Cl_2$/Ar 기반의 플라즈마 식각보다 높은 식각률을 보여 주었으며 $N_2$ 가스 흐름 조절 외에도 공정 압력, RF power, bias power를 변경하며 실험하였다. 식각된 ZnO 박막의 표면은 최대 식각률을 보이는 공정 조건을 찾기 위해 surface profiler ($\alpha$-step)을 이용하여 식각률을 측정하였으며 ZnO 박막 표면의 화학적인 변화를 조사하기 위해 x-ray photoelectron spectroscopy (XPS)를 사용하였다. XPS 분석 결과 Zn $2p_{3/2}$ peak 가낮은 binding energy 쪽으로 이동한 것을 관찰 할 수 있었다. 또한 O 1s 의 스펙트럼을 분석한 결과 N-O bond와 O-H bond가 존재함이 밝혀졌다.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.249-255
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• 1999

Deposition characteristics of Cu thin films using Ar carrier gas and $H_2$ processing gas at various working pressures and substrate temperatures were investigated. Also, effects of $H_2$ pretreatment using plasma at $200^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure were stdied. Cu thin films were deposited on TiN/Si substrate at working pressure of 0.5~1.5 Torr, substrate temperatures of 140~$240^{\circ}C$ with (hface)Cu(tmvs). Substrates were pretreated by $H_2$ plasma, and Cu films deposited in situ using twofold shower head. The purity, electrical resistivity, thickness, surface morphology, optical properties of the deposited Cu films were measured b the AES, four point probe, stylus profiler, SEM,. and the uv-visible spectrophotometer. This study suggests that $H_2$ plasma is an effective method for enhancing deposition rate and for producing high quality copper thin films.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1321-1322
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• 2007

$Ar/Cl_2$, $Ar/CH_4$ 및 $Ar/Cl_{2}/CH_{4}$ 유도결합 플라즈마의 가스 혼합비에 따른 BLT 박막의 식각 메커니즘과 선택비, 식각 후 박막 표면의 조성변화를 조사하였다. BLT 박막의 최대식각률은 $Ar/Cl_2$ 플라즈마에서의 Ar 가스 혼합비가 80%일 때 50.8 nm의 값을 보였다. 이 때, 1sccm의 $CH_4$ 첨가를 통하여 선택비와 식각률을 개선할 수 있었다. 박막 표면의 xPS 분석을 통해 BLT 박막 표면의 조성변화는 Cl 원자와의 반응에 의한 화학적 식각 손상이 H 원자와의 반응에 의한 그것보다 크다는 것을 알 수 있었다.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.152-158
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• 1994

Diamondlike carbon thin film have been fabricated using methane as a reactive gas by plasma enhanced chemical vapor deposition. Effects of hydrogen gas on the optical properties of the thin film has been investigated. When the hydrogen was used as a secondary gas, the role of hydrogen changed with deposition power unlike inert gases such as Ar and He. From the changes of optical band gap and FT-IR analysis, it was predicted that the chemical etching, sputtering of C-H bond by hydrogen and the implantation of hydrogen into the thin film could occur. The validity of the possibilities was confirmed by examining the effect of secondary gases such as Ar and He.