• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.201-204
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• 2000

Thermal shock resistance of 80Al2O3-20Al composite and monolithic alumina ceramics was compared. Fracture strength was measured by using a 4-pont bending test after quenching. Thermal stresses of the ceramics and ceramic-metal composites were calculated using a finite element analysis. The bending strength of the Al2O3 ceramics decreased catastropically after quenching from 20$0^{\circ}C$ to $0^{\circ}C$. The bending strength of the composite also decreased after quenching from 200~2$25^{\circ}C$, but the strength reduction was much smaller than for Al2O3. The maximum thermal stress occured in the monolithic alumina ceramics when exposed to a temperature difference of 20$0^{\circ}C$ was 0.758 GPa. The same amount of stress occured in the Al2O3-Al composite when the temperature difference of 205$^{\circ}C$ used.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.27-33
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• 1998

We have investigated tunneling magnetoresistance (TMR) properties of Fe/$Al_2O_3$/Co magnetic trilayer junctions sputtered on single-crystal Si (001) substrates. $Al_2O_3$ layers with thicknesses of 50~200 $\AA$ were deposited directly on the bottom ferromagnetic layer by a reactive rf sputtering. For comparsion, we prepared Pt/$Al_2O_3$/Pt tunnel junctions whose current-voltage (I-V) characteristics measured at 300 K indicated that reactively sputtered $Al_2O_3$ is a particularly good material for thin insulating barriers and allows us to form pinhole-free tunnel barriers. The magnetic tunnel junctions exhibit changes of tunnel resistance of about 0.1% at 300 K with an applied magnetic field and it was found that most junctions with Co as a top electrode have rather good I-V and TMR characteristics compared to those with Fe as a electrode. These results were discussed in relation to interfacial on the basis of those for Pt/$Al_2O_3$/Pt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.701-704
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• 2001

The dielectric and sintering properties of LaAlO$_3$ceramics synthesised with La$_2$O$_3$-Al$_2$O$_3$(LAO) and La$_2$O$_3$-Al(OH)$_3$(LAH) were investigated. In case of LAH samples, a single phase of LaAlO$_3$powders was formed at 100$0^{\circ}C$, density of the ceramics sintered at 140$0^{\circ}C$ was 6.41g/㎤, and the dielectric constant and loss were 22.4 and 0.003, respectively. In case of LAO samples, a single phase of LaAlO$_3$powders was formed at 130$0^{\circ}C$, density of the ceramics sintered at 150$0^{\circ}C$ was 6.35g/㎤, and the dielectric constant and loss were 22.16 and 0.009, respectively.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.422-427
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• 2005

The $Al_2O_3$ with various phases were prepared by simple ex-situ hydrolysis and spark plasma sintering (SPS) process of Al powder. The nano bayerite $(\beta-Al(OH)_3)$ phase was derived by hydrolysis of commercial powder of Al with micrometer size, whereas the bohemite (AlO(OH)) phase was obtained by hydrolysis of nano Al powder synthesized by pulsed wire evaporation (PWE) method. Compaction as well as dehydration of both nano bayerite and bohemite was carried out simultaneously by SPS method, which is used to fabricate dense powder compacts with a rapid heating rate of $100^{\circ}C$ per min. under the pressure of 50MPa. After compaction treatment in the temperature ranges from $100^{\circ}C\;to\; 1100^{\circ}C$, the bayerite and bohemite phases change into various alumina phases depending on the compaction temperatures. The bayerite shows phase transition of $Al(OH)_3{\to}{\eta}-Al_2O_3{\to}{\theta}-Al_2O_3{\to}\alpha-Al_2O_3$ sequences. On the other hand, the bohemite experiences the phase transition from AlO(OH) to ${\gamma}-Al_2O_3\;at\;350^{\circ}C.$ It shows AlO(OH) ${\gamma}-Al_2O_3{\to}{\delta}-Al_2O_3{\to}{\alpha}-Al_2O_3$ sequences. The ${\gamma}-Al_2O_3$ compacted at $550^{\circ}C$ shows a high surface area $(138m^2/g)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.195-195
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• 2008

CAS계 유리에 $CaCO_3-Al_2O_3$ 혼합물 및 화합물을 10, 30 wt% 첨가하여 저온 소걸 및 마이크로파 유전 특성을 고찰하였다. CAS계 유리의 연화온도는 $841^{\circ}C$ 이며, CAS계 유리에 $CaCO_3$ 와 30 wt%의 $CaCO_3-Al_2O_3$ 혼합물을 melting되며, 10 wt%의 $CaCO_3$, $Al_2O_3$, $1CaCO_3-1Al_2O_3$ 혼합물 및 $CaAl_2O_4$ 화합물를 10 wt% 첨가하였을 때 $900^{\circ}C$ 이하에서 소걸이 가능하였다. 복합체의 XRD 상 분석 결과, CaCO3를 첨가하였을 때에는 모든 조성이 비정질을 나타내었고, $Al_2O_3$와 $1CaCO_3-1Al_2O_3$ 혼합물은 $Al_2O_3$ 결정상이 생성되었고, $CaAl_2O_4$ 화합물은 $CaAl_2Si_2O_8$의 hexagonal와 anorthite 결정상이 생성되었다. 따라서 CAS-10 (A, C-A, CA) 복합체는 $900^{\circ}C$에서 각각 유전율 ($\varepsilon_r$) 6.4, 6.9, 5.15 와 품질계수 ($Q^*f$) 2,400, 1,500, 3,000의 마이크로파 유전 특성을 나타내어 LTCC 기판 재료로 사용이 가능하며, 특히 $CaAl_2O_4$ 화합물을 사용하였을 때 가장 우수한 유전 특성을 나타내는 것을 확인하였다.

• Korean Journal of Materials Research
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• v.29 no.2
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• pp.129-135
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• 2019

A powder mixture of 70 wt% $Al_2O_3$ and 30 wt% hydroxyapatite (HA) is sintered at $1300^{\circ}C$ or $1350^{\circ}C$ for 2 h at normal pressure. An $MgF_2$-added composition to make HA into fluorapatite (FA) is also prepared for comparison. The samples without $MgF_2$ show ${\alpha}$ & ${\beta}$-tricalcium phosphates (TCPs) and $Al_2O_3$ phases with no HA at either of the sintering temperatures. In the case of $1,350^{\circ}C$, a $CaAl_4O_7$ phase is also found. Densification values are 69 and 78 %, and strengths are 156 and 104 MPa for 1,300 and $1,350^{\circ}C$, respectively. Because the decomposition of HA produces a $H_2O$ vapor, fewer large pores of $5-6{\mu}m$ form at $1,300^{\circ}C$. The $MgF_2$-added samples show FA and $Al_2O_3$ phases with no TCP. Densification values are 79 and 87 %, and strengths are 104 and 143 MPa for 1,300 and $1,350^{\circ}C$, respectively. No large pores are observed, and the grain size of FA ($1-2{\mu}m$) is bigger than that of TCP ($0.7{\mu}m{\geq}$) in the samples without $MgF_2$. The resulting $TCP/Al_2O_3$ and $FA/Al_2O_3$ composites fabricated in situ exhibit strengths 6-10 times higher than monolithic TCP and HA.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.140-148
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• 2010

The effects of the addition of either monoclinic $ZrO_2(ZrO_2(m))$ or tetragonal $ZrO_2(ZrO_2(t))$ containing 5.35[wt%] $Y_2O_3$ on the physical properties and electrical conductivity of $Al_2O_3$ were investigated. The addition of $ZrO_2$(m) and $ZrO_2$(t) increased sintered density of $Al_2O_3$. The Vickers hardness also increased as addition of $ZrO_2$(t) increased going through a maximum at 20[wt%] and the hardness of the specimens was found to be dependent on the sintered density. The addition of $ZrO_2$(t) improved the hardness of $Al_2O_3-ZrO_2$ systems and the $ZrO_2$(m) addition showed the better effect on the thermal shock property of $Al_2O_3-ZrO_2$ systems than that of the $ZrO_2$(t) addition. Above 15[wt%] addition of $ZrO_2$(t), the electrical conductivity is gradually increased with increasing applied voltage but not effects by addition of $ZrO_2$(m).

• Korean Journal of Materials Research
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• v.22 no.6
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• pp.316-320
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• 2012

$Co_3O_4$, $Al_2O_3$ and $Co_3O_4$/$Al_2O_3$ mesoporous powders were prepared by a sol-gel method with starting matierals of aluminum isopropoxide and cobalt (II) nitrate. A P123 template is employed as an active organic additive for improving the specific surface area of the mixed oxide by forming surfactant micelles. A transition metal cobalt oxide supported on alumina with and without P123 was tested to find the most active and selective conditions as a heterogeneous catalyst in the reaction of styrene epoxidation. A bBlock copolymer-P123 template was added to the staring materials to control physical and chemical properties. The properties of $Co_3O_4$/$Al_2O_3$ powder with and without P123 were characterized using an X-ray diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), a Bruner-Emmertt-Teller (BET) surface analyzer, and $^{27}Al$ MAS NMR spectroscopy. Powders with and without P123 were compared in catalytic tests. The catalytic activity and selectivity were monitored by GC/MS, $^1H$, and $^{13}C$-NMR spectroscopy. The performance for the reaction of epoxidation of styrene was observed to be in the following order: [$Co_3O_4$/$Al_2O_3$ with P123-1173 K > $Co_3O_4$/$Al_2O_3$ with P123-973 K > $Co_3O_4$-973 K>$Co_3O_4$/$Al_2O_3$-973 K > $Co_3O_4$/$Al_2O_3$ with P123-1473 K > $Al_2O_3$-973 K]. The existence of ${\gamma}$-alumina and the nature of the surface morphology are related to catalytic activity.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1045-1053
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• 1993

Alumina hydrates were prepared by the neutralization of AlCl3.6H2O solution with NH3 gas diluted with N2 gas. The values of pH in reaction solution influenced the formation of alumina hydrates minerals. Amorphous alumina hydrates, for example, were formed at ${\gamma}$-Al2O3longrightarrow$\delta$-Al2O3longrightarrow$\theta$-Al2O3longrightarrow$\alpha$-Al2O3. (2) Bayeritelongrightarrowamorphouslongrightarrow${\gamma}$-Al2O3longrightarrow$\delta$-Al2O3longrightarrowη-Al2O3longrightarrow$\theta$-Al2O3longrightarrow$\alpha$-Al2O3. On the other hand, the shape of alumina hydrates whichw ere prepared by the reacton of Al2(SO4)3.16H2O solution and NH3 gas was spherical, the progress of its phase transformation with increasing temperature was amorphouslongrightarrow${\gamma}$-Al2O3longrightarrow$\alpha$Al2O3 in sequence.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.106-110
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• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.