• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.797-805
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• 1992

Al2O3-20 wt% ZrO2 composite powders to be used as the starting materials of the Al2O3/ZrO2-Spinel composite system were prepared by the use of the emulsion-hot kerosene drying method. The crystalline phase of ZrO2 in the synthesized Al2O3-ZrO2 composite powders was 100% tetragonal but the small amount of t-ZrO2 was transformed into m-ZrO2 after crushing. The hardness, fracture toughness, and flexural strength of the composite, which was sintered at 1650$^{\circ}C$ for 4 hrs after calcining at 1100$^{\circ}C$ for 2 hrs and had the relative density of 99%, were 15.7 GPa, 4.97 MN/m3/2, and 390 MPa, respectively. The fracture form in the sintered composites was found to be the intergranular fracture.

• Journal of Surface Science and Engineering
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• v.44 no.4
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• pp.125-130
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• 2011

$Cr_2AlC$ compounds were synthesized by hot pressing, and oxidized between 900 and $1200^{\circ}C$ in air for up to 50 hours. They oxidized to a thin $Al_2O_3$ layer containing a small amount of $Cr_2O_3$with the liberation of carbon as CO or $CO_2$ gases. The consumption of Al to form the $Al_2O_3$ layer led to the depletion of Al and enrichment of Cr just below the $Al_2O_3$ layer, resulting in the formation of an underlying $Cr_7C_3$ layer. As the oxidation temperature and time increased, the $Cr_7C_3$ oxide layer and the underlying $Cr_7C_3$ layer thickened. The oxidation resistance of $Cr_2AlC$ was generally good due to the formation of the $Al_2O_3$ barrier layer.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.04b
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• pp.11-11
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• 2002

Plastic deformation was observed by TEM around the intragranular SiC particles in the $Al_2O_3$ matrix for $Al_2O_3/SiC$ nanocomposite system. The dislocations are generated at selected planes and there is a tendency for the dislocations to form a subgrain boundary structure with low-angel grain boundaries and networks. In this study, dislocation generated in the $Al_2O_3$ matrix during cooling down from sintering temperatures by the highly localized thermal stresses within and/or around SiC particles caused from the thermal expansion mismatch between $Al_2O_3$ matrix and SiC particle was observed. In monolithic $Al_2O_3$ and $Al_2O_3/SiC$ microcomposite system. These phenomena is closely related to the plastic relaxation of the elastic stress and strain energy associated with both thermal misfitting inclusions and creep behaviors. The plastic relaxation behavior was explained by combination of yield stress and internal stress.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.11
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.703-714
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• 1994

Sintering and microstructure of Ce-TZP/Al2O3 composite with $\alpha$-Al2O3 matrix containing dispersed 5~50 vol% ZrO2 were discussed. Sintered density was increased with elevating forming pressure in range of 6~300 MPa and about >99.2% of theoretical density was obtained at 1$600^{\circ}C$ for 2h in case of 300 MPa of 6~300 MPa uniaxially cold-pressed compacts containing 20 vol% ZrO2. All kinds of different batch composition exhibited nearly the same shrinkage behaviour with end-point shrinkage between 20 and 24%, and had the maximum shrinkage rate (0.41~0.54%/min) around 140$0^{\circ}C$. Grain growth was occurred faster in $\alpha$-Al2O3 than in {{{{ gamma }}-Al2O3 starting matrix during sintering at 1$600^{\circ}C$. Bimodal pore size distribution of interaglomerate pores with size of 0.03~0.2 ${\mu}{\textrm}{m}$ and of interaglomerate pores with size of around 60 ${\mu}{\textrm}{m}$ was obtained in Ce-TZP/$\alpha$-Al2O3 composite sintered at 130$0^{\circ}C$. But unimodal pore size distribution with around 0.1 ${\mu}{\textrm}{m}$ was observed in Ce-TZP/{{{{ gamma }}-Al2O3 composite sintered at the same temperature. Microcracks were occurred due to the tlongrightarrowm transformation of ZrO2 on cooling process.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.153-158
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• 2002

$Al_2O_3$ composites powders with 1∼11 wt% $TiO_2$ were prepared by wet method and sintered at 1350$^{\circ}C$, 1450$^{\circ}C$ for 2h. Mechanical properties and microstructural evolution were investigated in this study. $Al_2O_3$-3 wt% $TiO_2$ composite were high bulk density of 2.37 g/$cm^3$ and low apparent porosity of 6.3%. The composites containing of 3 wt% $TiO_2$ showed moderately high bending strength of 68.9 MPa and the young's modulus of 35.5 MPa. The composites with increasing $TiO_2$ contents exhibit reduced thermal expansion coefficient due to the formation of $Al_2TiO_5$ phase.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.44-49
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• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.837-842
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• 1992

SiC and Si mixtures dispersed by 0.5~10.0 wt% of Al2O3 and reinforced by SiC whisker were sintered to Si3N4 bonded SiC bodies at 140$0^{\circ}C$ in a N2 gas atmosphere, and the nitridation and mechanical properties of sintered bodies were investigated. From these observation, it is concluded that relative density and bending strength increased with the rising of nitridation and the highest nitridation ratio was obtained for a specimen having 1.5 wt% Al2O3. On the other hand, the amount of $\beta$-Si3N4 in the specimens containing Al2O3 more than 5.0 wt% was increased abruptly and the best in fracture toughness was sintered for a composits having 30 wt% SiC whiskers.