• 한국세라믹학회지
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• 제26권1호
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• pp.31-36
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• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• 한국세라믹학회지
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• 제51권3호
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• 한국재료학회지
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• 제16권2호
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• pp.92-98
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• 2006

Molecular dynamics simulations were performed to study interface structures between an $Al_2O_3$ crystalline phase and a interface phase of $CaAl_2Si_2O_8$. We calculated atomic structures and excess interface energies in systems with different thicknesses of the interface film. It was found that excess interface energies at first readily decreased with increasing film thickness, but increased for larger thicknesses of more than 2 nm. The excess energies of $Al_2O_3/CaAl_2Si_2O_8$ interfaces exhibit a minimum at a thickness around 1 nm. In this range of film thicknesses, the atoms in the interface film show a short-range ordered structure and slow diffusion rather than the random structure and rapid diffusion expected to an observation of an equilibrium thickness for interface films in ceramics.

• 한국광물학회지
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• 제22권4호
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• pp.343-352
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• 2009

특정 원자 중심의 정보를 제공해주는 고분해능 고상핵자기 공명 분광분석(NMR)은 현무암질 마그마를 포함한 대부분의 자연계의 다성분계 규산염 용융체의 원자 구조 분석에 적합하다. 본 연구에서는 일차원과 이차원 고상 NMR을 이용하여 현무암질 마그마의 모델 시스템인 CMAS (CaO-MgO-$Al_2O_3-SiO_2$) 비정질 규산염의 조성에 따른 원자 구조의 변화를 규명하였다. $^{27}Al$ MAS NMR 실험 결과 모든 조성에대해 $^{[4]}Al$ 피크가 지배적으로 나타나고 이는 $Al^{3+}$이 네트워크 형성 이온으로 작용한다는 것을 지시한다. $X_{MgO}$가 증가함에 따라 피크 위치가 음의 방향으로 4.7 ppm 이동하며 이는 조성에서 Si의 상대적인 양이 증가할수록 $Q^4$(4Si)가 증가하는 것을 의미하고 이를 통해 Al 주변의 산소가 모두 연결 산소(BO, bridging oxygen)임이 확인되었다. $^{17}O$ NMR 실험 결과 비정질 $CaMgSi_2O_6$에 있는 비연결 산소의 상대적 양이 $CaAl_2SiO_6$에 있는 비연결 산소보다 정성적으로 많은 것이 확인되었다. 모델 사성분계 비정질 알루미노규산염에 대한 $^{17}O$ 3QMAS NMR 실험결과 Al-O-Al, Al-O-Si, Si-O-Si의 연결 산소와 {Ca, Mg}-NBO의 원자 환경이 구별되며 이 실험 결과는 자연계에서 나타나는 다양한 조성의 다성분계 비정질에 대해서도 이차원 3QMAS NMR 실험을 이용하여 원자구조를 규명할 수 있는 가능성을 제시한다.

• 대한화학회지
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• 제55권4호
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• pp.570-574
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• 2011

최대 0.20 mm 크기를 가진 아날심 단결정은 $3.00SiO_2$ : $1.50NaAlO_2$ : 8.02NaOH : $454H_2O$ : 5.00TEA의 겔 조성으로부터 합성되어졌다. $Na^+$ 이온으로 완전히 이온교환 된 아날심은 0.1 M 농도의 NaCl 수용액으로부터 준비하였다(이온교환용액의 pH는 NaOH 용액을 첨가하여 6에서 11로 맞추었다). $|Na_{0.94}(H_2O)|[Si_{2.06}Al_{0.94}O_6]-ANA(a=13.703(3){\AA})$의 분자식을 가지는 수화된 아날심 단결정의 구조는 294 K에서 Ibca의 orthorhombic 공간군으로 단결정 X-선 회절기법에 의해 결정되었다. 결정 구조의 최종 에러값은 $R_1/wR_2$= 0.054/0.143에 수렴되었다. 약 15개의 $Na^+$ 이온이 팔면체 배위로 3군데의 비동등한 위치에서 발견되었다. 합성된 아날심의 화학적 조성은 $Na_{0.94}(H_2O)Si_{2.06}Al_{0.94}O_6$ 확인되었으며, Si/Al 비는 단결정 구조 정밀화를 통하여 찾은 양이온의 점유수인 14.79개에 의해 2.19로 결정되었다.

• 반도체디스플레이기술학회지
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• 제14권4호
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• pp.45-49
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• 2015

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.

• Bulletin of the Korean Chemical Society
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• 제28권12호
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• pp.2288-2292
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• 2007

The catalytic activities of nickel-based catalysts were estimated for oxidizing acetaldehyde of VOCs exhausted from industrial facilities. The catalysts were prepared by sol-gel methods of SiO2 and SiO2-TiO2 as a xerogel followed by impregnating Al2O3 powder with the nickel nitrate precursor. The crystalline structure and catalytic properties for the catalysts were investigated by use of BET surface area, X-ray diffraction (XRD), Xray photoelectron spectroscopy (XPS) and temperature programmed reduction (TPR) techniques. These results show that nickel oxide is transformed to NiAl2O4 spinel structure at the calcination temperature of 400 °C in response to the steps with after- and co-impregnation of Al2O3 powder in sol-gel process. The NiAl2O4 could suppress the oxidation reaction of acetaldehyde by catalysts. The NiO is better dispersed on SiO2-TiO2/Al2O3 support than SiO2/Al2O3 and SiO2-TiO2-Al2O3 supports. From the testing results of catalytic activities for oxidation of acetaldehyde, Catalysts showed a big difference in conversion efficiencies with the way of the preparation of catalysts and the loading weight of nickel. The catalyst of 8 wt.% Ni/TiO2-SiO2/Al2O3 showed the best conversion efficiency on acetaldehyde oxidation with 100% conversion efficiency at 350 °C.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• 한국안광학회지
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• 제7권2호
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• pp.19-25
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• 2002

$SrO-B_2O_3$ 유리들에 같은 양의 $Al_2O_3$와 $SiO_2$를 첨가한 3성분 SrBAl 유리들과 SrBSi 유리들을 제작하여, $^{11}B$ NMR 방법을 이용하여 4배위 붕소 수인 $N_4$, 대칭적 3배위 붕소 수인 $N_{3S}$ 그리고 비대칭적 3배위 붕소 수인 $N_{3A}$를 얻어 구조를 정량적으로 비교 분석하였다. 두 유리 모두에 대해 $BO_3$ 단위의 경우 $Q_{cc}$=2.74MHz, ${\eta}=0.22$이며, $BO_3{^-}$단위의 경우 $Q_{cc}$=2.54MHz, ${\eta}=0.55$ 그리고 $BO_4$ 단위의 경우 $Q_{cc}$=0.60~0.75MHz, ${\eta}{\approx}0.00$이다. SrBAl 유리계에서는 $R_{1st}$($N_4$ 값의 제1변환점)에서의 유리들의 구조는 tetraborate ($[B_8O_{13}]^{-2}$) 단위들과 1차 변형된 diborate($[B_2Al_2O_7]^{-2}$) 단위들로 구성되어졌으며, $R_{max}$($N_4$ 최대인 R)에서 유리의 구조는 diborate($[B_4O_7]^{-2}$) 단위들, metaborate($[BO_2^{-1}]$) 단위들, 1차 변형된 diborate 단위들, 그리고 2차 변형된 diborate($[B_2Al_2O_8]^{-4}$) 단위들로 구성되어졌다. 그리고 3배위인 $AlO_3$ 단위들은 $BO_3$ 단위들보다 SrO로부터 도입된 산소를 우선적으로 배위하여 4배위인 $AlO_4$ 단위들로 전환되었다. 또한, SrBSi 유리계에서는 Si 원자들은 $R{\leq}0.5$ 영역에서는 붕소 망목구조에 기여하지 않으므로 유리 구조는 $SiO_4$ 단위들로 희석(diluted)된 2성분 SrB 유리계와 같은 구조로 구성되어졌으며, $R{\geq}R_{max}$이상의 영역에서는 SrO로부터 도입된 산소에 의해 $SiO_4$ 단위들이 $BO_3{^-}$ 단위들보다 우선적으로 $SiO_4{^-}$ 단위들로 모두 형성되었다. 그리고 $R_{max}$에서 유리의 구조는 diborate 단위들, metaborate 단위들, loose $BO_4([BO_2]^{-1})$ 단위들, 그리고 $SiO_4{^-}([SiO_{2.5}]^{-1})$ 단위들로 구성되어졌다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 춘계학술강연 및 발표대회
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• pp.11-11
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• 2002

Plastic deformation was observed by TEM around the intragranular SiC particles in the $Al_2O_3$ matrix for $Al_2O_3/SiC$ nanocomposite system. The dislocations are generated at selected planes and there is a tendency for the dislocations to form a subgrain boundary structure with low-angel grain boundaries and networks. In this study, dislocation generated in the $Al_2O_3$ matrix during cooling down from sintering temperatures by the highly localized thermal stresses within and/or around SiC particles caused from the thermal expansion mismatch between $Al_2O_3$ matrix and SiC particle was observed. In monolithic $Al_2O_3$ and $Al_2O_3/SiC$ microcomposite system. These phenomena is closely related to the plastic relaxation of the elastic stress and strain energy associated with both thermal misfitting inclusions and creep behaviors. The plastic relaxation behavior was explained by combination of yield stress and internal stress.