• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.31-36
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• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.92-98
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• 2006

Molecular dynamics simulations were performed to study interface structures between an $Al_2O_3$ crystalline phase and a interface phase of $CaAl_2Si_2O_8$. We calculated atomic structures and excess interface energies in systems with different thicknesses of the interface film. It was found that excess interface energies at first readily decreased with increasing film thickness, but increased for larger thicknesses of more than 2 nm. The excess energies of $Al_2O_3/CaAl_2Si_2O_8$ interfaces exhibit a minimum at a thickness around 1 nm. In this range of film thicknesses, the atoms in the interface film show a short-range ordered structure and slow diffusion rather than the random structure and rapid diffusion expected to an observation of an equilibrium thickness for interface films in ceramics.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.343-352
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• 2009

High-resolution Solid-state NMR provides element specific and quantitative information and also resolves, otherwise overlapping atomic configurations in multi-component non-crystalline silicates. Here we report the preliminary results on the effect of composition on the structure of CMAS (CaO-MgO-$Al_2O_3-SiO_2$) silicate glasses, as a model system for basaltic magmas, using the high-resolution 1D and 2D solid-state NMR. The $^{27}Al$ MAS NMR spectra for the CMAS silicate glasses show that four-coordinated Al is predominant, demonstrating that $Al^{3+}$ is network forming cation. The peak position moves toward lower frequency about 4.7 ppm with increasing $X_{MgO}$ due to an increase in $Q^4$(4Si) fraction with increasing Si content, indicating that Al are surrounded only by bridging oxygen. $^{17}O$ MAS NMR spectra for $CaAl_2SiO_6$ and $CaMgSi_2O_6$ glasses qualitatively suggest that NBO fraction in the former is smaller than that in $CaMgSi_2O_6$ glasses. As $^{17}O$ 3QMAS NMR spectrum of model quaternary aluminosilicate glass resolved distinct bridging and non-bridging oxygen environments, atomic structure for natural magmas can also be potentially probed using high-resolution 3QMAS NMR.

• Journal of the Korean Chemical Society
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• v.55 no.4
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• pp.570-574
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• 2011

Large colorless single crystals of analcime with diameters up to 0.20 mm have been synthesized from gels with the composition of $3.00SiO_2$ : $1.50NaAlO_2$ : 8.02NaOH : $454H_2O$ : 5.00TEA. The fully $Na^+$-exchanged analcime have been prepared with aqueous 0.1 M NaCl (pH adjusted from 6 to 11 by dropwise addition of NaOH). The single-crystal structure of hydrated $|Na_{0.94}(H_2O)|[Si_{2.06}Al_{0.94}O_6]$-ANA per unit cell, a=13.703(3) ${\AA}$, has been determined by single-crystal X-ray diffraction technique in the orthorhombic space group Ibca at 294 K. The structure was refined using all intenties to the final error indices (using only the 1,446 reflections for which $F_o$ > $4{\sigma}(F_o))R_1/wR_2$ = 0.054/0.143. About 15 $Na^+$ ions are located at three nonequivalent positions and octahedrally coordinated. The chemical composition is $Na_{0.94}(H_2O)Si_{2.06}Al_{0.94}O_6$. The Si/Al ratio of synthetic analcime is 2.19 determined by the occupations of cations, 14.79, in the single-crystal determination work.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.45-49
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• 2015

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2288-2292
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• 2007

The catalytic activities of nickel-based catalysts were estimated for oxidizing acetaldehyde of VOCs exhausted from industrial facilities. The catalysts were prepared by sol-gel methods of SiO2 and SiO2-TiO2 as a xerogel followed by impregnating Al2O3 powder with the nickel nitrate precursor. The crystalline structure and catalytic properties for the catalysts were investigated by use of BET surface area, X-ray diffraction (XRD), Xray photoelectron spectroscopy (XPS) and temperature programmed reduction (TPR) techniques. These results show that nickel oxide is transformed to NiAl2O4 spinel structure at the calcination temperature of 400 °C in response to the steps with after- and co-impregnation of Al2O3 powder in sol-gel process. The NiAl2O4 could suppress the oxidation reaction of acetaldehyde by catalysts. The NiO is better dispersed on SiO2-TiO2/Al2O3 support than SiO2/Al2O3 and SiO2-TiO2-Al2O3 supports. From the testing results of catalytic activities for oxidation of acetaldehyde, Catalysts showed a big difference in conversion efficiencies with the way of the preparation of catalysts and the loading weight of nickel. The catalyst of 8 wt.% Ni/TiO2-SiO2/Al2O3 showed the best conversion efficiency on acetaldehyde oxidation with 100% conversion efficiency at 350 °C.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.19-25
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• 2002

Ternary $xSrO-yB_2O_3-0.1Al_2O_3$ and $xSrO-yB_2O_3-0.1SiO_2$ glasses were prepared as a function of R(${\equiv}x/y$). The fraction of four-coordinated brans ($N_4$), symmetric three-coordinated barons ($N_{3S}$), and asymmetric three-coordinated barons ($N_{3A}$) were determined quantitatively to study the structures of these glasses by $^{11}B$ NMR. The values of $Q_{cc}$ and ${\eta}$ for $BO_3$ unit in the glasses were 2.74MHz and 0.22, those for $BO_3{^-}$ unit were 2.54MHz and 0.55, and those for $BO_4$ unit 0.60~0.75MHz and 0.00, respectively. The structure of SrBAl glass at $R_{1st}$ consisted of tetraborate ($[B_8O_{13}]^{-2}$) units and 1st-modified diborate ($[B_2Al_2O_7]^{-2}$) units, and those for the glass at $R_{max}$consisted of diborate ($[B_4O_7]^{-2}$) units, metaborate ($[BO_2^{-1}]$), 1st-modified diborate units, and 2nd-modified diborate ($[B_2Al_2O_8]^{-4}$) units. Due to the oxygens introduced from the strontium oxide. $AlO_4$ units were preferably formed rather than $BO_4$ units. And, the structure of SrBSi glasses in the region $R{\leq}0.5$ could be viewed as binary $SrO-B_2O_3$ glasses structure diluted by silicate oxide: therefore, the Si atoms of the glasses did not contributed to the change the configuration around the boron atoms. The silicate oxide was formed the $SiO_4{^-}$ units rather than the $BO_3{^-}$ units by the oxygens introduced from the storntium oxide in the region of $R{\geq}R_{max}$, and structure of those glass at $R_{max}$ consisted of diborate units, metaborate units loose $BO_4([BO_2]^{-1})$, and $SiO_4{^-}([SiO_{2.5}]^{-1})$ units.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.04b
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• pp.11-11
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• 2002

Plastic deformation was observed by TEM around the intragranular SiC particles in the $Al_2O_3$ matrix for $Al_2O_3/SiC$ nanocomposite system. The dislocations are generated at selected planes and there is a tendency for the dislocations to form a subgrain boundary structure with low-angel grain boundaries and networks. In this study, dislocation generated in the $Al_2O_3$ matrix during cooling down from sintering temperatures by the highly localized thermal stresses within and/or around SiC particles caused from the thermal expansion mismatch between $Al_2O_3$ matrix and SiC particle was observed. In monolithic $Al_2O_3$ and $Al_2O_3/SiC$ microcomposite system. These phenomena is closely related to the plastic relaxation of the elastic stress and strain energy associated with both thermal misfitting inclusions and creep behaviors. The plastic relaxation behavior was explained by combination of yield stress and internal stress.