• Title/Summary/Keyword: $Al_2O_3/SiC$

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Synthesis of $Al_2O_3$-SiC-C refractory powders by Self-propagating High Temperature Synthesis (연소합성법을 이용한 $Al_2O_3$-SiC-C 계 내화분말 합성의 최적조건 결정)

  • 강충일;윤존도
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.205-205
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    • 2003
  • 우리나라에서는 많은 양의 폐분진이 발생하며 경남지역에서는 연간 3만톤의 폐분진이 발생한다. 매년 폐기물의 발생량은 증가하고 있으며 폐분진류의 주성분은 실리카와 알루미나가 주성분을 이룬다. 특히 주조, 제강 등 금속공업에서 발생하는 분진은 입자가 미세한 다량의 실리카와 알루미나로 이루어져 있어 탄화규소(SiC) 및 알루미나-탄화규소-탄소(A1$_2$O$_3$-SiC-C)계 내화물 제조에 분쇄공정 없이 세라믹스의 원료로 활용할 수 있다. 현재 알루미나-탄화규소-탄소(Al$_2$O$_3$-SiC-C)계 내화물 제조를 위해 제조공정이 간단한 연소합성법을 이용하지만 분말제조 공정 중 분위기 조절에 많은 비용이 요구되고 있어 시급한 대안이 필요한 상태이다.

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Valuation properties of $SiO_2-B_2O_3$-R(R=CaO, BaO, ZnO, $Bi_2O_3$) borosilicate glass system for fabricating low temperature ceramics (저온 소결 세라믹스 제조를 위한 $SiO_2-B_2O_3$-R(CaO, BaO, ZnO, $Bi_2O_3$)계 붕규산염 유리 특성 평가)

  • Yoon, Sang-Ok;Lee, Hyun-Sik;Kim, Kwan-Soo;Heo, Wuk;Shim, Sang-Heung;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.272-273
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    • 2006
  • LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 4 종류의 borosilicate계 glass를 선정하고 filler로 $Al_2O_3$ ceramics를 filler 사용하여 30~50 vol% glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 $SiO_2$$B_2O_3$ 함량비를 고정한 후 R(CaO, BaO, ZnO, $Bi_2O_3$)에 따라 유리 연화온도(Ts)와 함량이 소결에 미치는 영향 및 유전 특성 변화를 고찰한 결과, CaO-$B_2O_3-SiO_2$ glass의 경우 다량의 2 차상이 형성되었고, 이에 $900^{\circ}C$ 이하에서 완전 소결이 이루어지지 않았으며, BaO-$B_2O_3-SiO_2$ glass는 celsian($BaAl_2Si_2O_8$) 결정이 형성되면서 소결성의 저하를 갖고 왔으며, ZnO-$B_2O_3-SiO_2$ glass는 소결이 진행됨에 따라 주상이 $Al_2O_3$에서 gahnite($ZnAl_2O_4$) 결정이 형성되면서 품질계수가 크게 증가하였으며, $Bi_2O_3-B_2O_3-SiO_2$ glass는 45 vol%일 때 $900^{\circ}C$에서부터 일정한 선수축율 특성을 나타내었지만, 다량의 액상으로 인하여 유전 특성의 저하를 나타내었다.

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Process Temperature Dependence of Al2O3 Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

  • Oh, Sung-Kwen;Shin, Hong-Sik;Jeong, Kwang-Seok;Li, Meng;Lee, Horyeong;Han, Kyumin;Lee, Yongwoo;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.581-588
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    • 2013
  • This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

High Temperature Oxidation of Ti-6Al-4V, Ti-4Fe, Ti-(1,2)Si Alloys (Ti-6Al-4V, Ti-4Fe, Ti-(1,2)Si합금의 고온산화)

  • 박기범;이동복
    • Journal of the Korean institute of surface engineering
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    • v.34 no.2
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    • pp.135-141
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    • 2001
  • Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.

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Oxidation of CrAlMgSiN thin films between 600 and 900℃ in air (CrAlMgSiN 박막의 600-900℃에서의 대기중 산화)

  • Won, Seong-Bin;Xu, Chunyu;Hwang, Yeon-Sang;Lee, Dong-Bok
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.112-113
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    • 2013
  • Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

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Electrical Resistivity of the $\beta-SiC+39vol.%TiB_2$ Composites ($\beta-SiC+39vol.%TiB_2$ 복합체의 전기저항률)

  • Park, Mi-Lim;Whang, Chul;Shin, Yong-Deok;Lee, Dong-Yoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.15-18
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    • 2001
  • The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

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Microstructural Wear Mechanism of $Al_2O_3-5$ vol% SiC nanocomposite and $Si_3N_4$Ceramics

  • Riu, Doh-Hyung;Kim, Yoon-Ho;Lee, Soo-Wohn;Koichi Niihara
    • Journal of Powder Materials
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    • v.8 no.3
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    • pp.179-185
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    • 2001
  • Through the observation of wear scar of two ceramic materials, microstructural wear mechanisms was investigated. As for the $Al_2O_3$-5 vol% SiC nanocomposite, the grain boundary fracture was suppressed by the presence of SiC nano-particles. The intragranular SiC particles have inhibited the extension of plastic deformation through the whole grain. Part of plastic deformation was accommodated around SiC particles, which made a cavity at the interface between SiC and matrix alumina. On the other hand, gas-pressure sintered silicon nitride showed extensive grain boundary fracture due to the thermal fatigue. The lamination of wear scar was initiated by the dissolution of grain boundary phase. These two extreme cases showed the importance of microstructures in wear behavior.

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Effects of Porosity on the Properties of Pressureless Sintered $\beta$-SiC-$ZrB_2$ Electroconductive Ceramic Composites (무가압 소결법에 의한 $\beta$-SiC-$ZrB_2$편(偏) 도전성(導電性) 복합체(複合體) 미치는 기공(氣孔)의 영향)

  • Ju, Jin-Young;Kwon, Ju-Sung;Shin, Yong-Deok
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.311-313
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    • 1997
  • The effects of porosity on the pressureless sintered $\beta$-SiC-$ZrB_2$ composites with $Al_2O_3$ additions(4, 8, 12wt.%) under argon atmosphere were investigated. Relative density of $\beta$-SiC-$ZrB_2$ composites were decreased with the $Al_2O_3$ content. The relative density and fracture toughness of $\beta$-SiC-$ZrB_2$ with 4wt% $Al_2O_3$ are 93.2%, $1.323MPa{\cdot}m^{1/2}$ respectively. The Vicker's hardness and flexural strength of $\beta$-SiC-$ZrB_2$ with 12wt.% $Al_2O_3$ are 0.492GPa, 261MPa respectively. Fracture toughness of $\beta$-SiC-$ZrB_2$ composites are directly proportional to relative density.

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Low Pressure Joining of SiCf/SiC Composites Using Ti3AlC2 or Ti3SiC2 MAX Phase Tape

  • Septiadi, Arifin;Fitriani, Pipit;Sharma, Amit Siddharth;Yoon, Dang-Hyok
    • Journal of the Korean Ceramic Society
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    • v.54 no.4
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    • pp.340-348
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    • 2017
  • $SiC_f/SiC$ composites were joined using a $60{\mu}m-thick$ $Ti_3AlC_2$ or $Ti_3SiC_2$ MAX phase tape. The filler tape was inserted between the $SiC_f/SiC$ composites containing a 12 wt.% $Al_2O_3-Y_2O_3$ sintering additive. The joining was performed to a butt-joint configuration at $1600^{\circ}C$ or $1750^{\circ}C$ in an Ar atmosphere by applying 3.5 MPa using a hot press. Microstructural and phase analyses at the joining interface confirmed the decomposition of $Ti_3AlC_2$ and $Ti_3SiC_2$, indicating the joining by solid-state diffusion. The results showed sound joining interface without the presence of cracks. Joining strengths higher than 150 MPa could be obtained for the joints using $Ti_3AlC_2$ or $Ti_3SiC_2$ at $1750^{\circ}C$, while those for joined at $1600^{\circ}C$ decreased to 100 MPa approximately without the deformation of the joining bodies. The thickness of initial filler tape was reduced significantly after joining because of the decomposition and migration of MAX phase owing to the plasticity at high temperatures.

Fabrication of Textured $Al_2O_3-Mullite-SiC$ Nano-composite by Slip Casting in a High Magnetic Field and Reaction Sintering

  • Sakka, Yoshio;Saito, Sho;Honda, Atsushi;Suzuki, Tohru S.;Moriyoshi, Yusuke
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.327-328
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    • 2006
  • We have demonstrated that textured $Al_2O_3-mullite-SiC$ nanocomposites can be fabricated by slip casting followed by partial oxidation - reaction sintering of mixed suspensions of $Al_2O_3$ and SiC powders in a high magnetic field. The sintered density was changed by the degree of oxidation at 1200C and 1300C. The degree of orientation of alumina in the nanocomposite was examined on the basis of the X-ray diffraction patterns and scanning electron micrographs. It is confirmed that alumina-oriented nanocomposites were fabricated. The three-point bending strength at room temperature was observed for the nanocomposites.

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