• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.106-112
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• 1995

In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.

• Bulletin of the Korean Chemical Society
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• v.31 no.5
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• pp.1241-1246
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• 2010

Ternary Cu/ZnO/$Al_2O_3$ catalysts were prepared by a co-precipitation method. The precursor structures were monitored during the aging. The first precipitate structure was amorphous georgeite, which transformed into the unknown crystalline structure. The transition crystalline structure was assigned to the crystalline georgeite, which was suggested with elemental analysis, IR and XRD. The final structure of precursors was malachite. The Cu surface area of the resulting Cu/ZnO/$Al_2O_3$ was maximized to be 30.6 $m^2$/g at the aging time of 36 h. The further aging rapidly decreased Cu surface areas of Cu/ZnO/$Al_2O_3$. ZnO characteristic peaks in oxide samples almost disappeared after 24 h aging, indicating that ZnO was dispersed in around bulk CuO. TOF of the prepared catalysts of the Cu surface area ranges from 13.0 to 30.6 $m^2/g_{cat}$ was to be 2.67 ${\pm}$ 0.27 mmol/$m^2$.h in methanol synthesis at the condition of $250^{\circ}C$, 50 atm and 12,000 mL/$g_{cat}$. h irrespective of the XRD and TPR patterns of CuO and ZnO structure in CuO/ZnO/$Al_2O_3$. The pH of the precipitate solution during the aging time can be maintained at 7 by $CO_2$ bubbling into the precipitate solution. Then, the decrease of Cu surface area by a long aging time can be prevented and minimize the aging time to get the highest Cu surface area.

• Korean Journal of Chemical Engineering
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• v.36 no.2
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• pp.191-196
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• 2019

The phase of Cu,Zn,Al precursors strongly affects the activity of their final catalysts. Herein, the Cu,Zn,Al precursor was prepared by precipitation of $Al^{3+}$ onto primitive, amorphous Cu,Zn precipitate. This precursor turned out to be a phase mixture of zincian malachite and hydrotalcite in which the latter phase was less abundant compared to the co-precipitated precursor. The final catalyst derived from this precursor exhibited a little higher copper surface area and methanol synthesis activity than the co-precipitated counterpart. Therefore, the two precursor phases need to be mixed in an adequate proportion for the preparation of active $Cu/ZnO/Al_2O_3$ catalyst.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.43-47
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• 2008

[ $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ ] nano-glass has been prepared by sol-gel method. The mean particle size was 60.3 nm with narrow size distribution. The nano-galss has been used as a sintering aid for the densification of the NiZnCu ferrites. The ferrite was sintered with nano-glass sintering aids at $840{\sim}900^{\circ}C$, 2 h and the initial permeability, quality factor, density, and saturation magnetization were also measured. The initial permeability of 0.5 wt% nano-glass added toroidal sample for NiZnCu ferrites sintered at $900^{\circ}C$ was 193.3 at 1 MHz. The initial permeability and saturation magnetization were increased with increasing annealing temperature. As a result, $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ nano-glass systems were found to be useful as sintering aids for multilayer chip inductors.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Journal of Hydrogen and New Energy
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• v.7 no.2
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• pp.147-155
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• 1996

The aim of this study is the development of technologies of methanol production from carbon dioxide by catalytic hydrogenation. Experiments about carbon dioxide hydrogenation by catalyst mixed with CuO, ZnO, $Cr_2O_3$ and $Al_2O_3$ were conducted to find optimum catalyst and reaction condition. Reactions were carried out at atmospheric and high pressures between 200 to $350^{\circ}C$. High yield of methanol was obtained with $Cu/ZnO/Cr_2O/Cr_2O_3/Al_2O_3$ catalyst at $250^{\circ}C$ and above 30 atmospheric pressure. There was not any increament of hydrogenation reactivity for the catalysts which was made by the addition of Pd to $Cu/ZnO/Cr_2O/Cr_2O_3/Al_2O_3$.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.67-71
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• 2011

La doped CuO-ZnO-$Al_2O_3$ powders are prepared by sol-gel method with aluminum isopropoxide and primary distilled water as precursor and solvent. In this synthesized process, the obtained metal oxides caused the precursor such as copper (II) nitrate hydrate and zinc (II) nitrate hexahydrate were added. To improve the surface areas of La doped CuO-ZnO-$Al_2O_3$ powder, sorbitan (z)-mono-9-octadecenoate (Span 80) was added. The synthesized powder was calcined at various temperatures. The dopant was found to affect the surface area and particle size of the mixed oxide, in conjunction with the calcined temperature. The structural analysis and textual properties of the synthesized powder were measured with an X-ray Diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), Bruner-Emmett-Teller surface analysis (BET), Thermogravimetry-Differential Thermal analysis (TG/DTA), $^{27}Al$ solid state Nuclear Magnetic Resonance (NMR) and transform infrared microspectroscopy (FT-IR). An increase of surface area with Span 80 was observed on La doped CuO-ZnO-$Al_2O_3$ powders from $25m^2$/g to $41m^2$/g.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• Journal of Hydrogen and New Energy
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• v.30 no.2
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• pp.95-102
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• 2019

In order to investigate the effect of water treatment on activity of WGS catalyst, $Cu/ZnO/MgO/Al_2O_3$ (CZMA) catalysts were synthesized by co-precipitation method. The prepared catalysts were water-treated at two different temperature (250, $350^{\circ}C$). Synthesized catalysts were characterized by using BET, SEM, $N_2O$ chemisorption, XRD, $H_2-TPR$ and XPS analysis. The catalytic activity tests were carried out at a GHSV of $28,000h^{-1}$ and a temperature range of $180-320^{\circ}C$. The reduction temperature decreased with water treatment and CZMA_250 catalyst showed the lowest reduction temperature and retained a large amount of $Cu^+$. Water-treated catalysts showed increased reactivity compared to untreated catalyst and the CZMA_250 catalyst showed higher catalytic activity on WGS reaction.

• Journal of Hydrogen and New Energy
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• v.26 no.5
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• pp.423-430
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• 2015

$Cu/ZnO/Al_2O_3$ catalysts for water gas shift (WGS) reaction were synthesized by co-precipitation method with the fixed molar ratio of Cu/Zn/Al precursors as 45/45/10. Copper and zinc precursor were added into sodium carbonate solution for precipitation and aged for 24h. During the aging period, aluminum precursor was added into the aging solution with different time gap from the precipitation starting point: 6h, 12h, and 18h. The resulting catalysts were characterized with SEM, XRD, BET surface measurement, $N_2O$ chemisorption, TPR, and $NH_3$-TPD analysis. The catalytic activity tests were carried out at a GHSV of $27,986h^{-1}$ and a temperature range of 200 to $400^{\circ}C$. The catalyst morphology and crystalline structures were not affected by aluminum precursor addition time. The Cu dispersion degree, surface area, and pore diameter depended on the aging time of Cu-Zn precipitate without the presence of $Al_2O_3$ precursor. Also, the interaction between the active substance and $Al_2O_3$ became more stronger as aging duration, with Al precursor presented in the solution, increased. Therefore, it was confirmed that aluminum precursor addition time affected the catalytic characteristics and their catalytic activities.