• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
• /
• pp.461-464
• /
• 1987

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.22-26
• /
• 2021

Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation in the organic light emitting diodes (OLED). Of those, a laminated structure of Al₂O₃ and MgO were applied to provide efficient barrier performance for increasing the stability of devices in air. Atomic layer deposition (ALD) method is known as the most promising technology for making the laminated Al₂O₃/MgO and is used to realize a thin film encapsulation technology in organic light-emitting diodes. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the control system of the MgCP₂ precursor for the atomic layer deposition of MgO was established in order to deposit the MgO layer stably by the injection time of second level and the stable heating temperature. The deposition rate was obtained stably to be from 4 to 10 Å/cycle using the injection pulse times ranging from 3 to 12 sec and a substrate temperature ranging from 80 to 150 ℃.

• Tribology and Lubricants
• /
• 제11권4호
• /
• pp.35-44
• /
• 1995

Within the practical ranges of speed and load, the formation of transfer films and the consequent effects on the friction and wear behavior of ceramic materials during repeated pass sliding contact were studied. These tests were done using $Al_{2}O_{3}$, SiC and $Si_{3}N_{4}$ with the cylinder-on-flat test configuration. The three pairings behaved differently, even if some wear mechanisms were common to the three systems. The $Al_{2}O_{3}$ pair showed the least wear in overall conditions, followed by the $Si_{3}N_{4}$ pair in harder sliding conditions. The wear of SiC was very high at severe loading. In case of $AL_{2}O_{3}$ and $Si_{3}N_{4}$, the transfer film, whenever formed, is strongly attached, enough to resist being wiped off by the slider. As a consequence, the formation of this f'fim leads to a decrease in the wear rate because of the protecting role of the film. The presence of the film at the contact interface also results in high friction. Also, the wear rate of each ceramics is related to the frictional power provided by load, speed and friction.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.465-465
• /
• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

• Journal of Information Display
• /
• 제5권3호
• /
• pp.30-34
• /
• 2004

Fabrications of barrier layer on a polyethersulfon (PES) film and OLED based on a plastic substrate by atomic layer deposition (ALD) have been carried out. Simultaneous deposition of 30 nm of $AlO_x$ film on both sides of PES film gave film MOCON value of 0.0615 g/$m^2$/day (@38$^{\circ}C$, 100 % R.H.). Moreover, the double layer of 200 urn $SiN_x$ film deposited by PECVD and 20 nm of $AlO_x$ film by ALD resulted in the MOCON value lower than the detection limit of MOCON. The OLED encapsulation performance of the double layer have been investigated using the OLED structure of ITO/MTDATA(20 nm)/NPD(40 nm)/AlQ(60 nm)/LiF(1 nm)/Al(75 nm) based on the plastic substrate. Preliminary life time to 91 % of initial luminance (1300 cd/$m^2$) was 260 hours for the OLED encapsulated with 100 nm of PECVD deposited $SiN_x$/30 nm of ALD deposited $AlO_x$.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권3호
• /
• pp.306-315
• /
• 1995

본 논문에서는 $Al_{2}$ $O_{3}$박막을 GAIVBE(Gas Assisted Ionized Vapour Beam Epitaxy)기법에 의해 저온에서 300-1,400.angs.의 두께로 성장하여 그 조건을 제시하였다. 아울러 Al-Al$_{2}$ $O_{3}$-Si의 MOS구조를 제작하여 전기적 특성을 고찰하고 그 결과를 분석, 제시하므로써 GAIVBE기법에 의해 저온으로 형성된 $Al_{2}$ $O_{3}$막의 활용 가능성을 보고하였다. 한편, 본 연구에서 제작한 $Al_{2}$ $O_{3}$막의 저항율은 막의 두께 100-1,000.angs.인 시료제작에서 $10^{8}$ohm-cm 와 $10^{13}$ohm-cm로 측정되었고, 비유전율은 9.5-10.5, 절연파괴강도 6-7MV/cm(+바이어스)와 11-12MV/cm(-바이어스)이었다.

• 한국세라믹학회지
• /
• 제27권7호
• /
• pp.841-850
• /
• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• 한국결정성장학회지
• /
• 제8권1호
• /
• pp.55-63
• /
• 1998

조성이 각각 1.9 $SiO_2-1.5\;Na_2O-Al_2O_3-40\;H_2O$인 반응물과 10 $SiO_2-7\;Na_2O-Al_2O_3-280\;H_2O$인 반응물로부터 다공성 지지판에 성장된 A형 및 Y형 제올라이트 결정박막을 합성하였다. 합성된 제올라이트 막은 X선회절분석기와 주사전자현미경으로 특성을 검토하였다. 지지체 상에 붙어 성장한 A 및 Y형 제올라이트 결정은 치밀하게 서로 붙은 상태였으며 그 두께가 약 8-15$\mu$m 정도였다. 또한 반응물을 조제할 때, 물은 첨가하지 않은 채로 혼합하고 디스크형으로 가압성형하여 $100^{\circ}C$에서 결정화시켜도 치밀하게 성장된 제올라이트 결정박막을 합성할 수 있었다. 박막으로 결정화시킨 A형 제올라이트는 미세세공의 분자체기능을 통하여 물과 메탄올의 혼합수용액에서 물만을 선택적으로 투과시키는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2001년도 제21회 학술발표회 초록집
• /
• pp.66-66
• /
• 2001

• Journal of Korean Vacuum Science & Technology
• /
• 제5권1호
• /
• pp.11-18
• /
• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.