• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.36-40
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• 2003

We have grown D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ (x = 0.5,1.0, 1.5,2.0) magnetic garnet thin films upon $Al_2$O3i and GGG substrate using Pechini process. The annealing temperature to get single phase D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ garnet is dependent on substrate, i.e. the annealing temperature for GGG substrate il 5$0^{\circ}C$ lower than that for $Al_2$ $O_3$ substrate. The grains of garnet thin film grown on GGG (111) plane align along [111] direction, and in this case the hysteresis curve does not saturate up to H : 5000 Oe. We attribute this phenomenon to rotation magnetization process. The maximum amount of Bi substitution in polycrystalline D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ thin film prepared by Pechini process is restricted to 2.0 Bi atom/unit cell, and this value is less than that in single garnet crystall grown by LPE method.own by LPE method.ethod.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.447-452
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• 1998

The selective dry etching of GaAs to Al\ulcornerGa\ulcornerAs using $BCI_3/SF_6$ gas mixture in electron cyclotron resonance(ECR) plasma is investigated. A selectivity of GaAs to AlGaAs of more than 100 and maximum etch rate of GaAs are obtained at a gas ratio $SF_6/BCI_3+SF_6$ of 25%. We verified the formation of $AlF_3$ on $Al_{0.25}Ga_{0.75}As$from the Auger spectra which enhanced the etch selectivity. In order to investigate surface damage of AlGaAs caused by ECR plasma, we performed a low temperature photoluminescence(PL) measurement as a function of RF power. As the RF power. As the RF power increases, the PL intensity decreases monotonically from 50 to 100 Wand then repidly decreases until 250 W. This behavior is due to surface damage by plasma treatment. This dry etching technique using $BCI_3/SF_6$ gas mixture in ECR plasma is suitable for gate recess formation on the GaAs based pseudomorphic high electron mobility transistor(PHEMT)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.314-314
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• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Korean Journal of Adult Nursing
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• v.14 no.3
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• pp.378-389
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• 2002

Purpose: The purpose of this study was to identify the relationship of fatigue and quality of sleep in patients with cancer. Method: The data was collected from January to February 2001. Study objects were recruited K university hospital in Busan, Korea. Their fatigue was measured using the Revised Piper Fatigue Scale developed by Piper et. al(1998), and quality of sleep was measured using Quality of Sleep Questionare by Oh et. al(1998). Result: 1) The fatigue score was mean $114.80{\pm}34.88$(range: 22-220). The sub dimension that showed behavior/severity score at $33.70{\pm}13.89$, affective score at $24.23{\pm}3.33$, sensory score at $27.74{\pm}12.51$, and cognitive/mood score at $29.11{\pm}3.71$. And sleep quality score was mean $37.32{\pm}8.18$. 2) There was a significant difference in religion(F=4.157, P= .008), present therapy(F=2.536, P= .043), past therapy(F=6.625, P= .000), major caregiver(F=3.133, P= .028), and change of weight(F=7.965, P=.006), according to general characteristics in the fatigue in patients with cancer. 3) There was a significant difference in present pain(t=-2.103, P= .037) and change of weight(F=5.484, P=.005), according to general characteristics in the sleep quality in patients with cancer. 4) There was a significant negative correlation between fatigue and quality of sleep(r=- .340, P= .000). Conclusion: Patients with cancer experience in fatigue. Increase in fatigue are associated with decreases in quality of sleep. Nurses must provide patients with nursing care about the occurrence of fatigue and interventions to deal with sleep disturbance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.27-31
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly(N-vinylcarbazole)(PVK), 2,5-bis(5'-tert-butyl-2-benzoxazoly)thiophene(BBOT), N,N'-diphenyl-N,N'-(3-methyphenyl)-1,1'-biphenyl-4, 4'-diarnine(TPD) and poly(3-hexylthiophene)(P3HT). To improve the external quantum efficiency of EL devices, we added the functional layer to the devices such as LiF insulating layer, carrier confinement layer(BBOT) and hole injection layer(CuPc). In the ITO/emitting layer/Al device, the maximum quantum efficiency at 15V was $1.88{\times}10^{-5}%$. And then, it is increased by a factor of 27 to $5.2{\times}10^{-3}%$ in ITO/CuPc/emitting layer/BBOT/LiF/Al device at 15V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.934-941
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• 2000

We measured the electron transport coefficients, the electron drift velocity W and the longitudinal diffusion coefficient $D_{L}$ in the 0.526% and 5.05% $C_{3}F_{8}$-Ar mixtures over the E/N range from 0.01 Td to 100 Td by the double shutter drift tube, and compared the measured results by Hunter et al. with those. We determined the inelastic collision cross sections for the $C_{3}F_{8}$ molecule by the comparison of the present measurements and the calculation of electron transport coefficients in the $C_{3}F_{8}$-Ar mixtures by using a multi-term Boltzmann equation analysis.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.21 no.6
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• pp.3-12
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• 2011

A hashing function that maps arbitrary messages directly onto curve points (MapToPoint) has non-negligible complexity in pairing-based cryptosystems. Unlike elliptic curve cryptosystems, pairing-based cryptosystems require the hashing function in ternary fields. Barreto et al. observed that it is more advantageous to hash the message to an ordinate instead of an abscissa. So, they significantly improved the hashing function by using a matrix with coefficients of the abscissa. In this paper, we improve the method of Barreto et al. by reducing the matrix. Our method requires only 44% memory of the previous result. Moreover we can hash a message onto a curve point 2~3 times faster than Barreto's Method.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.21 no.2
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• pp.3-11
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• 2011

Evaluation of cube roots in characteristic three finite fields is required for Tate (or modified Tate) pairing computation. The Hamming weights (the number of nonzero coefficients) in the polynomial representations of $x^{1/3}$ and $x^{2/3}$ determine the efficiency of cube roots computation, where $F_{3^m}$is represented as $F_3[x]/(f)$ and $f(x)=x^m+ax^k+b{\in}F_3[x]$ (a, $b{\in}F_3$) is an irreducible trinomial. O. Ahmadi et al. determined the Hamming weights of $x^{1/3}$ and $x^{2/3}$ for all irreducible trinomials. In this paper, we present formulas for cube roots in $F_{3^m}$ using the shifted polynomial basis(SPB). Moreover, we provide the suitable shifted polynomial basis bring no further modular reduction process.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.461-464
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• 1998

Self-aligned AlGaAs/GaAs HBTs with the emitter area of 1.5*10.mu.$m^{2}$ were fabricated usng $WN_{x}$ as emitter metal. Their DC and RF characteristics were investigated. The common emitter current gain was 45 at $J_{c}$ = 6*$10^{4}$A/$cm^{2}$. From the Gummel plot, the ideality factors of $I_{c}$ and $I_{B}$ were 1.18 and 1.70, respectively. Emitter and base resistance were extracted from voltage drop region in gummel plot, and their values were 5.3.ohm. and 38.2.ohm.. The extrapolated $f_{T}$ = 72GHz and $f_{max}$ = 81GHz were obtained at $V_{CE}$ = 2V.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.235-238
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• 2009

BaMg$Al_{10}O_{17}$ (BAM) co-doped with $Eu^{2+}$ and $Mn^{2+}$ was synthesized in a solid-state reaction and their luminescence properties were investigated as functions of the concentrations of the sensitizer and activator. BAM:$Eu^{2+}$ had a broad blue emission band at 450 nm and BAM:$Mn^{2+}$ exhibited green emission at 514 nm. The energy transfer from $Eu^{2+}$ to $Mn^{2+}$ was mainly of the resonance-type via an electric dipole-quadrupole interaction. Additionally, the addition of various fluxes such as $AlF_3$ and $BaF_2$ in the synthesis improves the moist and thermal stability. This is particularly important for the phosphor in white light emitting diodes (LEDs).