• 한국세라믹학회지
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• 제24권2호
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• pp.117-122
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• 1987

Glass forming ranges in the AlF3-(Mg＋Sr＋Ba)F2-P2O5 system are studied and ultraviolet transmission, infrared transmission, coefficient of refractive index, thermal expansion coefficient, density and chemical durability of the glasses are determined. Glass forming range is restricted MgF2 0-10wt%, SrF2 10-50wt%, BaF2 10-40wt% in this system. While BaF2 is substituted by SrF2, density and refractive index are decreased, micro hardness and thermal expansion coefficient are increased according to the increasing of SrF2 at fixed MgF2 contents. These samples represent high transmittance(93%) from 400nm to 3800nm and chemical durability of these samples show less than 0.3mg/$\textrm{cm}^2$$.$hy by weightloss.

• 한국세라믹학회지
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• 제34권4호
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• pp.368-372
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• 1997

The microwave dielectric properties of (1-x)La2/3TiO3-xLaAlO3 system in which LaAlO3 having $\varepsilon$r$\geq$90 and positive $\tau$f was investigated. The crystal system of (1-x)La2/3TiO3-xLaAlO3 was pseudo-cubic in the range of 0.1$\leq$x$\leq$0.07. Its lattice constant increased with increasing x in spite that the amount of LaAlO3 containing of smaller Al(0.57 $\AA$) ion than Ti(0.64 $\AA$) increased. As the amount of LaAlO3 increased from x=0.1 to 0.9, the relative dielectric constant ($\varepsilon$r) decreased from 50 to 23 and the temperature coefficient of resonant frequency($\tau$f) decreased from +84 to -50. On the other hand, the value of Q.f0 reached a maximum (148,000 at 7 GHz) at x=0.7, where a rapid increase in the peak intensity of XRD occured, and further increased after prolonged sintering. The microwave dielectric properties of $\varepsilon$r=37, Q.f0=47,000 (at 7 GHz), and $\tau$f=-2 ppm/$^{\circ}C$ were obtained near 0.6La2/3TiO3-0.4LaAlO3 (x=0.4) composition.

• 한국의학물리학회지:의학물리
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• 제5권2호
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• pp.13-20
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• 1994

본 연구에서는 감마선 조사, 전자선 조사방법에 의한 전자만의 주업 및 이온 주업 후 전자선조사 방법으로 전자들이 주입된 $\alpha$-$Al_2O_3$의 열자극 발광(Thermoluminescence : TL)에 관련된 결함 형태를 조사하였다. 감마선 조사된 $\alpha$-$Al_2O_3$의 열자극 발광 곡선은 380K, 415K, 440K, 460K 및 475K에서 TL peak가 나타났다. 광흡수 스펙트럼과 자외선 photobleaching 결과로부터 감마선 조사된 $\alpha$-$Al_2O_3$의 380K와 475K TL peak는 F center에, 415K TL peak는 $F^{+}$ center에 기인함을 알았다. 전자선 조사방법에 의하여 전자 주입된 $\alpha$-$Al_2O_3$의 열자극 발광 곡선은 380K, 415K, 440K 및 460K TL peak를 가졌고, $Li^{+}$ 이온 주입 후 전자선 조사방법으로 전자들이 주입된 $\alpha$-$Al_2O_3$는 440K에서 TL peak가 나타났다. 전자선 조사방법에 의한 전자만의 주입과 $Li^{+}$ 이온 주입 후 전자선 조사방법으로 전자들이 주입된 $\alpha$-$Al_2O_3$의 열자극 발광 특성은 380K TL peak는 F center에, 440K TL peak는 $F^{+}$ center에 기인함을 보였다.

• 한국세라믹학회지
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• 제34권6호
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• pp.629-635
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• 1997

The effects of the annealing atmospheres(O2, N2) and sintering additives that Bi2O3 is a major composition on the microwave dielectric and sintering propertie of (1-x)CaTiO3-xLaAlO3 system were investigated. The annealing atmospheres and the increase of annealing time after sintering did not affect the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) of (1-x)CaTiO3-xLaAlO3 system. However, the Q.f0 values of (1-x)CaTiO3-xLaAlO3 were very sensitive to annealing atmospheres. As the annealing time increased under O2 atmosphere the Q.f0 values of (1-x)CaTiO3-xLaAlO3 enhanced untill 10 hrs in 0.3$\leq$x$\leq$0.6 region, but degraded over that time. The increasing rate of Q.f0 value increased wth increasing x. On the other hand, as the annealing time increased under N2 atmosphere the Q.f0 values were constant in x$\leq$0.6 region, increased gradually in x$\geq$0.7 region. When 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% as sintering additives were added to (Ca0.5La0.5) (Ti0.5Al0.5)O3 (x=0.5) the sintering temperature of 1$600^{\circ}C$ was lowered to 140$0^{\circ}C$, and the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) were not nearly changed. The addition of 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% to (Ca0.5La0.5)(Ti0.5Al0.5)O3 made the Q.f0 values to be lower about 15% and 34%, respectively.

• 한국결정성장학회지
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• 제34권4호
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• pp.131-138
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• 2024

본 연구에서는 소결된 알루미나 기판에 코팅된 35Bi₂O₃-15Al₂O₃-50SiO₂(BiAlSiO) 및 35Bi₂O₃-7.5Al₂O₃-50SiO₂-7.5AlF₃(BiAlSiOF) 유리층의 미세구조와 플라즈마 저항 특성이 소결 조건에 따라 어떻게 변화하는지를 조사하였다. 코팅된 층은 바 코팅(bar Coating) 방법을 사용하여 형성되었으며, 이후 탈지 공정을 거쳐 반구 형성 온도 전/후인 700~900℃ 범위의 온도에서 소결 되었다. 내플라즈마성은 석영유리보다 두개의 코팅 유리가 약 2~3배 더 높았으며, F를 첨가한 BiAlSiOF는 BiAlSiO보다 높은 내플라즈성을 나타냈다. 이는 불소 첨가 효과로 판단된다. 소결 온도가 700℃에서 800℃로 증가함에 따라 두 유리 모두 내플라즈마성이 향상되었으나, 900℃까지 소결 온도를 증가시키면 내플라즈마성은 다시 감소한다(즉, 식각률이 높아진다). 이러한 현상은 두 유리의 결정화 거동과 관련 깊은 것으로 판단된다. 소결 조건에 따른 내플라즈마성의 변화는 Al과 Bi-rich 상의 출현여부에 관련된 것으로 생각된다.

• Journal of Electrochemical Science and Technology
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• 제9권1호
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• pp.60-68
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• 2018

In aqueous rechargeable lithium ion batteries, $LiV_3O_8$ exhibits obviously enhanced electrochemical performance after $AlF_3$ surface modification owing to improved surface stability to fragile aqueous electrolyte. The cycle life of $LiV_3O_8$ is significantly enhanced by the presence of an $AlF_3$ coating at an optimal content of 1 wt.%. The results of powder X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, inductively coupled plasma-optical emission spectrometry, and galvanostatic charge-discharge measurements confirm that the electrochemical improvement can be attributed mainly to the presence of $AlF_3$ on the surface of $LiV_3O_8$. Furthermore, the $AlF_3$ coating significantly reduces vanadium ion dissolution and surface failure by stabilizing the surface of the $LiV_3O_8$ in an aqueous electrolyte solution. The results suggest that the $AlF_3$ coating can prevent the formation of unfavorable side reaction components and facilitate lithium ion diffusion, leading to reduced surface resistance and improved surface stability compared to bare $LiV_3O_8$ and affording enhanced electrochemical performance in aqueous electrolyte solutions.

• Composites Research
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• 제13권5호
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• pp.31-36
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• 2000

금속/세라믹 복합체의 강화제로 사용가능한 다공성 뮬라이트 제조 시 공정변수 변화가 침상형 미세구조 형성에 미치는 영향에 대해 고찰하였다. 출발물질을 $Al_2O_3+SiO_2$와 $Al(OH)_3+SiO_2$로 달리하여 미세구조 변화를 고찰한 결과, $Al_2O_3$보다 반응성이 우수한 $Al(OH)_3$를 사용한 시편에서 더욱 발달한 침상형 구조가 나타났으며, 첨가제 $AlF_3$의 함량이 증가할수록, $SiF_4$가 발생하는 온도구간인 $900^{\circ}C$에서 유지하는 시간이 길수록 반응을 잘 일어나 시편 전체에서 침상형 뮬라이트가 형성되었다. 소결 온도의 경우 $1200^{\circ}C$에서부터 뮬라이트가 생성되었고, 소결 온도변화에 따른 미세구조는 큰 변화를 관찰할 수 없었다. 기공률은 첨가제의 양이 증가할수록, $900^{\circ}C$에서의 유지시간이 길수록 증가하였다.

• Journal of Information Display
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• 제6권1호
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• pp.28-32
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• 2005

The electronic structures of Al/RbF/tris-(8-hydroxyquinoline)aluminium ($Alq_3$) and $Al/CaF_2/Alq_3$interfaces were investigated using x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). For both systems, the UPS showed a significant valence band shift following the deposition of the thin fluoride layers on $Alq_3$. However, the formation of gap state in valence region and the extra peak N 1s core level spectra showed different trends, suggesting that the alkali fluoride and alkali-earth fluoride interlayer have different reaction mechanisms at the interface between Al cathode and $Alq_3$. In addition, the deposition of Al has considerably less effect on the valence band shift compared to the deposition of both RbF and $CaF_2$. These results suggest that the charge transfer across the interface and the resulting gap state formation may have lesser effect on the enhancement of organic light-emitting device performance than the observed valence band shift, which is thought to lower the electron injection barrier.

• 한국세라믹학회지
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• 제24권3호
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• pp.277-281
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• 1987

The various contents of MgF2 from 0 to 12.5wt% are studied in the AlF3-(Mg＋Sr＋Ba)F2-P2O5 system for the effects of various properties in glasses and the atmosphere of melting was controlled by N2 and Ar gas respectively. Density, refractive index, infrared transmission, thermal conductivity and thermal expansion coefficient of glasses are determined. Density, refractive index and thermal conductivity are decreased, micro-hardness and thermal expansion coefficient are increased according to the increasing of MgF2 contents. Infrared transmittance decreases with increasing the MgF2 contents and it slightly dropped by air than N2 and Ar atmosphere. Other properties are not influenced by atmosphere control.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.25-27
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• 2003

The device characteristics and the interface electronic structures of organic light-emitting devices based on /tris-(8-hydroxyquinoline)aluminum ($Alq_3$) were investigated with Al/NaF cathode. The Al/NaF cathode greatly improved the performance of the device over the Al-only cathode. A series of photoelectron spectroscopy studies on cathode structures including Al/LiF and $Al/CaF_2$ revealed that the performance enhancement originated mainly from the HOMO peak shift upon the fluoride deposition rather than the formation of the gap states