• Korean Journal of Materials Research
• /
• v.19 no.6
• /
• pp.305-312
• /
• 2009

The effects of Quenching and Partitioning (Q&P) and Annealed Martensite (AM) heat treatment on the microstructure and tensile properties were investigated for 0.24C-0.5Si-1.5Mn-1Al steels. The Q&P steels were annealed at a single phase ($\gamma$) or a dual phase (${\gamma}+{\alpha}$), followed by quenching to a temperature between $M_s$ and $M_f$. Then, enriching carbon was conducted to stabilize the austenite through the partitioning, followed by water quenching. The AM steels were intercritically annealed at a dual phase (${\gamma}+{\alpha}$) temperature and austempered at $M_s$ and $M_s{\pm}50^{\circ}C$, followed by cooling in oil quenching. The dual phase Q&P steels showed lower tensile strength and yieldyield strength than those of the single phase Q&P steels, and tThe elongation for the dual phase Q&P steel was partitioning 100s higher than that of that for the single phase Q&P steels as the partitioning time was less than 100s up to partitioning 100s. For AM steels, the tensile/yield strength decreased and the total elongation increased as the austempering temperature increased. The stability of the retained austenite controlled the elongation for Q&P steels and the volume fraction of the retained austenite controlled the elongation for AM steels.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.809-815
• /
• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Korean Journal of Materials Research
• /
• v.30 no.10
• /
• pp.558-565
• /
• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.6
• /
• pp.429-435
• /
• 1999

The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

• Korean Journal of Metals and Materials
• /
• v.48 no.6
• /
• pp.523-532
• /
• 2010

Co-application of organic coating and cathodic protection has not provided enough durability to low-alloyed steels inseawater ballast tank (SBT) environments. An attempt has made to study the effect of alloy elements (Al, Cr, Cu, Mo, Ni, Si, W) on general and localized corrosion resistance of steels as basic research to develop new low-allowed steels resistive to corrosion in SBT environments. For this study, we measured the corrosion rate by the weigh loss method after periodic immersion in synthetic seawater at $60^{\circ}C$, evaluated the localized corrosion resistance by an immersion test in concentrated chloride solution with the critical pH depending on the alloy element (Fe, Cr, Al, Ni), determined the permeability of chloride ion across the rust layer by measuring the membrane potential, and finally, we analyzed the rust layer by EPMA mapping and compared the result with the E-pH diagram calculated in the study. The immersion test of up to 55 days in the synthetic seawater showed that chromium, aluminium, and nickel are beneficial but the other elements are detrimental to corrosion resistance. Among the beneficial elements, chromium and aluminium effectively decreased the corrosion rate of the steels during the initial immersion, while nickel effectively decreased the corrosion rate in a longer than 30-day immersion. The low corrosion rate of Cr- or Al-alloyed steel in the initial period was due to the formation of $Cr_2FeO_4$ or $Al_2FeO_4$, respectively -the predicted oxide in the E-pH diagram- which is known as a more protective oxide than $Fe_3O_4$. The increased corrosion rate of Cr-alloyed steels with alonger than 30-day exposure was due to low localized corrosion resistance, which is explained bythe effect of the alloying element on a critical pH. In the meantime, the low corrosion rate of Ni-alloyed steel with a longer than 30-day exposure wasdue to an Ni enriched layer containing $Fe_2NiO_4$, the predicted oxide in the E-pH diagram. Finally, the measurement of the membrane potential depending on the alloying element showed that a lower permeability of chloride ion does not always result in higher corrosion resistance in seawater.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.258-258
• /
• 2016

최근 디스플레이 산업의 발전에 따라 고성능 디스플레이가 요구되며, 디스플레이의 백플레인 (backplane) TFT (thin film transistor) 구동속도를 증가시키기 위한 연구가 활발히 진행되고 있다. 트랜지스터의 구동속도를 증가시키기 위해 높은 이동도는 중요한 요소 중 하나이다. 그러나, 기존 백플레인 TFT에 주로 사용된 amorphous silicon (a-Si)은 대면적화가 용이하며 가격이 저렴하지만, 이동도가 낮다는 (< $1cm2/V{\cdot}s$) 단점이 있다. 따라서 전기적 특성이 우수한 산화물 반도체가 기존의 a-Si의 대체 물질로써 각광받고 있다. 산화물 반도체는 비정질 상태임에도 불구하고 a-Si에 비해 이동도 (> $10cm2/V{\cdot}s$)가 높고, 가시광 영역에서 투명하며 저온에서 공정이 가능하다는 장점이 있다. 하지만, 차세대 디스플레이 백플레인에서는 더 높은 이동도 (> $30cm2/V{\cdot}s$)를 가지는 TFT가 요구된다. 따라서, 본 연구에서는 차세대 디스플레이에서 요구되는 높은 이동도를 갖는 TFT를 제작하기 위하여, amorphous In-Ga-Zn-O (a-IGZO) 채널하부에 화학적으로 안정하고 전도성이 뛰어난 SnO2 채널을 얇게 형성하여 TFT를 제작하였다. 표준 RCA 세정을 통하여 p-type Si 기판을 세정한 후, 열산화 공정을 거쳐서 두께 100 nm의 SiO2 게이트 절연막을 형성하였다. 본 연구에서 제안된 적층된 채널을 형성하기 위하여 5 nm 두계의 SnO2 층을 RF 스퍼터를 이용하여 증착하였으며, 순차적으로 a-IGZO 층을 65 nm의 두께로 증착하였다. 그 후, 소스/드레인 영역은 e-beam evaporator를 이용하여 Ti와 Al을 각각 5 nm와 120 nm의 두께로 증착하였다. 후속 열처리는 퍼니스로 N2 분위기에서 $600^{\circ}C$의 온도로 30 분 동안 실시하였다. 제작된 소자에 대하여 TFT의 전달 및 출력 특성을 비교한 결과, SnO2 층을 형성한 TFT에서 더 뛰어난 전달 및 출력 특성을 나타내었으며 이동도는 $8.7cm2/V{\cdot}s$에서 $70cm2/V{\cdot}s$로 크게 향상되는 것을 확인하였다. 결과적으로, 채널층 하부에 SnO2 층을 형성하는 방법은 추후 높은 이동도를 요구하는 디스플레이 백플레인 TFT 제작에 적용이 가능할 것으로 기대된다.

• Journal of Conservation Science
• /
• v.22
• /
• pp.43-60
• /
• 2008

This study is investigated the characteristics and the comparison on blackware and whiteware at Gilmyeong-ri kilns, located Poncheon-si, Geonggi province at AD 19c using scientific analysis. It is measured by scientific analysis classified as microstructure observation, physical methods which involved chromaticity, specific gravity, absorption ratio and porosity, and chemical analysis of components of body and glaze. As a result, a particle and a pore of body surface appeared differently by the degree of vitrification. In glaze, Blackware have better on good vitrification than whiteware in the microstructure observation. The physical characteristics of chromaticity, specific gravity, absorption ratio and porosity differed according to degree of vitrification rather than porcelain types. In composition, body of blackware have higher ratio of $Fe_2O_3$ and $TiO_2$ than of whiteware. Also glaze of blackware have higher ratio of $Fe_2O_3$ and $TiO_2$, and lower ratio of $SiO_2$ and $Al_2O_3$ than whiteware. Especially, blackware have higher ratio in the composition of CaO and $P_2O_5$ by which ash is used or not.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.4
• /
• pp.11-15
• /
• 2000

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR(DLAR) coating of MgFe$_2$/GeO$_2$. We investigated GeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown GeO$_2$ film showed deposition temperature strong dependence. The GeO$_2$ at 400$\^{C}$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgFe$_2$film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4 ㎛ to 1.1 ㎛. Solar cells with a structure of MgFe$_2$/GeO$_2$/Ag/N$\^$+//p-type Si/P$\^$+//Al were investigated with the without DLAR coatings. We achieved the efficiency of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details about MgFe$_2$,GeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.272-272
• /
• 2011

무기물 나노입자를 포함하는 유기물/무기물 나노복합체는 차세대 전자 소자에 쉽게 적용이 가능하고 응용 잠재적 능력이 뛰어나기 때문에 차세대 비휘발성 메모리 소자에 응용하려는 연구가 세계적으로 활발히 진행되고 있다. 본 연구에서는 poly (methylmethacrylate) (PMMA) 절연성 고분자 박막 안에 CdTe와 CdTe-CdSe 코어-쉘 나노입자를 각각 분산시켜 이를 전하의 저장 매체로 사용하는 메모리 소자를 제작하였다. 제작된 각각의 소자에 대한 메모리 메카니즘과 PMMA 박막 안에 분포되어 있는 CdTe-CdSe 코어-쉘 나노입자에서 CdSe 쉘의 전기적 영향에 대하여 연구하였다. 소자에 필요한 용액을 제작하기 위해 서로 다른 용매에 녹아 있는 CdTe-CdSe 나노입자와 PMMA를 혼합하였다. Al 금속을 하부 전극으로 증착한 p-Si (100) 기판 위에 나노입자와 PMMA가 혼합된 용액을 스핀 코팅 방법을 사용하여 박막을 형성한 후, 남아있는 용매를 제거하기 위해 열처리를 하였다. 용매가 모두 제거된 박막위에 금속 마스크를 사용하여 상부 Al 전극을 열증착 방법으로 형성하였다. 나노입자가 포함된 고분자 박막의 메모리 특성을 비교하기 위하여 나노입자가 없는 PMMA층만으로 형성된 소자도 같은 방법으로 제작하였다. 세 가지 종류의 소자에 고주파 정전용량-전압 (C-V) 측정을 한 결과 나노입자가 분산된 PMMA 층으로 제작된 소자에서만 평탄 전압 이동이 관찰되었으며, 이것은 나노입자를 전하 포획 장소로 사용할 수 있다는 것을 확인하였다. 정전용량-시간 (C-t) 측정을 하여 나노입자가 포함된 PMMA 층으로 제작된 메모리 소자의 안정성을 관찰하였다. C-V와 C-t 측정 자료를 바탕으로 제작된 메모리 소자의 메모리 메카니즘과 CdTe-CdSe 코어-쉘 나노입자에서 CdSe 쉘의 역할을 설명하였다.

• Journal of the Korean Society for Heat Treatment
• /
• v.11 no.2
• /
• pp.140-149
• /
• 1998

The graphitization is affected by the addition of small amount of the elements, such as Si, Al, Ni, B, Cr and Mn etc. Boron is well known as the most effective element for the graphitization of cementite in high carbon steels. But a study on quantitative analysis of B effect on the graphitization is few reported. Therefore the effect of boron addition in Fe-0.65%C-1.0%Si-0.5%Mn steels on the graphitization is investigated quantitatively using hardness tester, optical microscope and scanning electron microscope, neutron induced microscopic radiography. The graphitization in high carbon steels is promoted with 0.003~0.005%B addition. But the graphitization in steels which has no boron takes long holding time at $680{\sim}720^{\circ}C$. The hardness of quenched steel containing 0.003%B is higher than that of 0.005%B added steel due to complete dissolution of fine graphites into the austenite. The 0.003%B added high carbon steel graphitized at $680^{\circ}C$ for 25hr is useful steel for the agricultural implements and automobile parts which needed a good formability and high hardness.