• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.111-115
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• 2015

To improve the efficiency of the Si solar cell, high minority carrier life time is required. Therefore, the passivation technology is important to eliminate point defects on the silicon surface, causing the loss of minority carrier recombination. PECVD or post-annealing of thermally-grown $SiO_2$ is commonly used to form the passivation layer, but a high-temperature process and low thermal stability is a critical factor of low minority carrier lifetime. In this study, atomic layer deposition was used to grow the $Al_2O_3$ passivation layer at low temperature process. $Al_2O_3$ was selected as a passivation layer which has a low surface recombination velocity because of the fixed charge density. For the high charge density, an improved minority carrier lifetime, and a low surface recombination, nitrogen was doped in the $Al_2O_3$ thin film and the improvement of passivation was studied.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.205-205
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• 2003

우리나라에서는 많은 양의 폐분진이 발생하며 경남지역에서는 연간 3만톤의 폐분진이 발생한다. 매년 폐기물의 발생량은 증가하고 있으며 폐분진류의 주성분은 실리카와 알루미나가 주성분을 이룬다. 특히 주조, 제강 등 금속공업에서 발생하는 분진은 입자가 미세한 다량의 실리카와 알루미나로 이루어져 있어 탄화규소(SiC) 및 알루미나-탄화규소-탄소(A1$_2$O$_3$-SiC-C)계 내화물 제조에 분쇄공정 없이 세라믹스의 원료로 활용할 수 있다. 현재 알루미나-탄화규소-탄소(Al$_2$O$_3$-SiC-C)계 내화물 제조를 위해 제조공정이 간단한 연소합성법을 이용하지만 분말제조 공정 중 분위기 조절에 많은 비용이 요구되고 있어 시급한 대안이 필요한 상태이다.

• Journal of the Korea Concrete Institute
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• v.25 no.4
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• pp.365-370
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• 2013

In this study, contents of limestone in cement manufactured by six domestic plants for Portland cement were investigated in terms of the strength and its relation to the $CO_2$ emission due to limestone material and its physical properties in cement manufacturing process. the relationship among CaO content, compressive strength, and $CO_2$ emission was surveyed for the limestone quantity in decomposition reaction and the loss of limestone quantity contained in each cement. As a result of $CO_2$ emission calculation for unit cement, it was found that the $CO_2$ emission due to decomposition of limestone was occupied 67% of total emission quantity. Furthermore, there was a difference in $CO_2$ emission quantity depending on the cement manufacturing process management. Also, it was shown that fossil fuel usage and material loss had a major influence as main factors of $CO_2$ emission. An increase in the CaO content in cement resulted in an increase in the compressive strength. On the contrary, CaO content and compressive strength were reduced with the growth of loss quantity of limestone. It was verified that the material and process management were more effective than CaO yield in cement manufacturing for $CO_2$ emission with the growth of $CO_2$ emission quantity. Pozzolanic materials such as PFA and GGBS in concrete mix affected the price, $CO_2$ emission and development of strength of concrete.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.397-402
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• 1998

$SiO_2$ etch characteristics were studied as a function of the basic parameters, such as the main RF power and the operating pressure in a helicon plasma. $SiO_2$ etch characteristics were improved as the main RF power was increased and the operating pressure was decreased. $SiO_2$ etch selectivity over silicon increased from 2.9 to 25.33 when the RF input power increased from 300 W to 2 kW and from 2.3 to 16.21 when the operating pressure decreased from 10 mTorr to 1.5 mTorr with $C_4F_8$ plasma. We used a quadrupole mass spectrometer to measure the relative abundancies of various ionic and radical species to explain the experimental results and found that when the operating pressure is low and the RF input power is high, the highly selective $SiO_2$ etch is achieved as a result of density increment of the densities of various ionic species.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.669-674
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• 2002

Ni-Zn ferrite was sintered by microwave hybrid sintering method using microwave energy of 2.45 GHz, 700 W in the temperature range of 900$^{\circ}C$ ∼ 1070$^{\circ}C$. A high density (98%TD) Ni-Zn ferrite, added Bi$_2$O$_3$ and CuO, with a single phase was obtained by microwave sintering at 970$^{\circ}C$ for 15 min. All the sintered samples showed sintered density over 90% of TD. These results indicate that the processing time and energy consumption can be reduced significantly by microwave hybrid sintering method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.270-275
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• 2021

ZnO was synthesized according to the transformation behavior and crystallization conditions of Zn-intermediate obtained by zinc sulfate as a precursor and NaOH, Na₂CO₃ as a alkali agents. For ZnO crystallization, Zn₄(OH)₆SO₄·H₂O and Zn₅(OH)₆(CO₃)₂·H₂O as a Zn-intermediate were calcined at 400℃ and 800℃ for 1 h, respectively, based on decomposition temperature from TGA. Zn₄(OH)₆SO₄·H₂O was confirmed to have mixed Zn₄(OH)₆SO₄·H₂O and ZnO at 400℃, and was completely thermally decomposed at 800℃ to form ZnO phase. The prepared Zn₅(OH)₆(CO₃)₂·H₂O as a Zn-intermediate by the reaction with Na₂CO₃ was transformed to a complete ZnO crystallization over 400℃. Nano-sized ZnO can be synthesized at a relatively lower calcination temperature through the reaction with Na₂CO₃.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Clean Technology
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• v.12 no.4
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• pp.244-249
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• 2006

The photocatalytic degradation of trichloroethlylene (TCE), has been investigated over $TiO_2$ photocatalysts irradiated with solar light. The effect of operational parameters, i.e., initial TCE concentration, $TiO_2$ concentration, pH and additives ($H_2O_2$, persulphate($S_2O{_8}^-$)) on the degradation rate of aqueous solution of TCE has been examined. The results presented in this work demonstrated that degradation of the TCE with $TiO_2/solar$ light was enhanced by augumentation in $TiO_2$ loading, pH, and adding additives but was inhibited by increase in initial TCE concentration. Also individual use of $H_2O_2$ was far more effective than using persulphate in TCE removal efficiency. Furthermore, the relative toxicity with a $solar/TiO_2/H_2O_2$ system was about 15% lower than with a $solar/TiO_2/persulphate$ system and about 35% lower than with a $solar/TiO_2$ system within a reaction time of 150 min, respectively.

• Resources Recycling
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• v.28 no.4
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• pp.30-36
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• 2019

In this study, Li powder was recovered from the by-product of LNO ($Li_2NiO_2$) process, which is the positive electrode active material of waste lithium ion battery, through the $CO_2$ thermal reaction process. In the process of recovering Li powder, the $CO_2$ injection amount is 300 cc/min. The $Li_2NiO_2$ award was phase-separated into the $Li_2CO_3$ phase and the NiO phase by holding at $600^{\circ}C$ for 1 min. After this, the collected sample:distilled water = 1:50 weight ratio, and after leaching, the solution was subjected to vacuum filtration to recover $Li_2CO_3$ from the solution, and the NiO powder was recovered. In order to increase the purity of Ni, it was maintained in $H_2$ atmosphere for 3 hours to reduce NiO to Ni. Through the above-mentioned steps, the purity of Li was 2290 ppm and the recovery was 92.74% from the solution, and Ni was finally produced 90.1% purity, 92.6% recovery.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.296-301
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• 2009

An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.