• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1236-1238
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• 1994

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

• Transactions of Materials Processing
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• v.13 no.1
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• pp.72-77
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• 2004

An Fe-25Cr steel was oxidized in Ar atmosphere at 973K with and without applying external stress of 30∼35 MPa. A 0.1$\mu\textrm{m}$ thick $Cr_2O_3$ scales formed during pre-treatment in Ar atmosphere. Initiation of cracking on the oxide scales took place at grain boundaries during the end of second creep stage, in which cracks were found nearly perpendicular to the tensile directions. On the contrary, a scale developed in $N_2$-0.1%$SO_2$ displaced a poor adherence on the metal substrate. In this sample, a fast grown of scales was observed during creep deformation, and the strength of materials was much lower than in Ar. The creep strain rate of $1.5{\times}10^{-7}/s$ and $5.8{\times}10^{-7}/s$ was determined in Ar and in $N_2$-0.1%$SO_2$ under 30MPa, respectively.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.1-7
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• 1995

Cu(400$\AA$)/Polyimide has been mixed with 80 keV Ar+ and N2+from 1.0X1015ions/$\textrm{cm}^2$ to 2.0X1016 ions/$\textrm{cm}^2$. The changes of chemical bond and internal properties of sample are investigated by X-ray photoelectron spectroscopy(XPS). The quantitative adhesion strength is measured by using scratch test. The optimized mixing condition is that Cu/PI is irradiated with 80 keV N2+ at a dose of 1.0X1015 ions/$\textrm{cm}^2$, because N2+ ions can product more pyridine-like moiety, amide group, and tertiary amine moiety which are known as adesion promoters than Ar+.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1997.10a
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• pp.37-42
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• 1997

This paper describes result of experiment of parameters affecting the micro hole drilling time, kind of assisting gas and it's pressure. The result reveals that parameter value of 0.08J, 20Hz, dwell time of 300 microseconds can be a good machining condition to make micro hole diameter range of 50-70${\mu}{\textrm}{m}$, Assistant gas such air, O2, Ar, N2 was adapted. Assistant gas of air makes heat affected zone enlarge due to burning of material, also it makes hole irregular and damage because of refusion stick to caused by chemical reaction with Al2O3 ceramic material. O2(99.9%) has good characteristic to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$, but it is expensive. Ar, N2 makes material burn and crack severely and proved to be an appropriate but, Ar was better than N2.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.263-267
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• 2006

As technology advances, there is a demand for development of hard solid lubricant coating. (Ti, Cr, Zr)N-$MoS_2$ films were deposited on AISI H13 tool steel substrate by co-deposition of $MoS_2$ with (Ti, Cr, Zr)N using a D.C. magnetron sputtering process. The influence of the $N_2Ar$ gas ratio, the amount of $MoS_2$ in the films and the bias voltage on the mechanical and structural properties of the films were investigated. The highest hardness level was observed at the $N_2/Ar$ gas ratio of 0.3. Hardness of the films did not change much with the increase of the $MoS_2$ content in the films. As the substrate bias potential was increased, hardness level of the film reached maximum at -150 V. Surface morphology of these films indicated that high hardness was attributed to the fine dome structure.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.71-72
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• 2007

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2003.04a
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• pp.73-76
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• 2003

SF$_{6}$ (Sulfur Hexafluoride) is a gaseous compound whose use is being greatly increased recently. The compound has a negligible background concentration from natural sources and is stable in most of groundwater environments. Therefore, SF$_{6}$ has potential for a dating tool for young groundwater. It has many advantages over chlorofluorocarbons (CFCs) for groundwater investigation that sampling procedure is much simpler than CFCs and its growth is continued up to at least near future in the atmosphere. However, solubility of SF$^{6}$ is so low that excess air causes large uncertainties in recharge date of groundwater. To compensate the limitation, $N_2$/Ar method can be employed to estimate excess air content. A groundwater study is currently carrying out in Jeju Island using SF$_{6}$ as an environmental tracer, Well waters and spring waters were sampled for SF$_{6}$ and $N_2$/Ar. To establish SF$_{6}$ input history in the study area, air sampling is being conducted in the area near the center of the island on a monthly and weekly basis. Based on the present data, the level of SF$_{6}$ concentration in the atmosphere of the Island is corresponding to the trend of the Northern Hemisphere.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.91-94
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• 1999

A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.64-69
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• 1984

We found that the maximum efficiency of Al-MIS (p-Si) solar ceil was shown at 80$\AA$ thickness of Al-film which was deposited with slower velocity than 0.6$\AA$/sec. It was coated with ZnS and SiO for Anti-Reflecting. In single coating, ZnS and SiO film had maximum Isc at 570 and 690 A thickness, respectively. We confirmed that these results agreed well with the quarter coating condition; n1d1=λ/4. In double coating, we held the one layer with its optimum thickness in single coating and controlled the other layer. The maximum value of Isc in this case was almost the same with it in single coating but was maintained its value in so wide range of thickness. Keeping the relation; n1d1=n2d2 as another way, we made the total thickness of film thinner to 70-90% of the sum of each optimum thickness in single coating. In this case Isc was higher value than 20% of it in any other previous case and was retained so wide range of thickness.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.8 no.5
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• pp.115-120
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• 1999

This research is a described result of experimental for the parameter's effecting the microhole machining by Nd-Yag laser, The parameters are energy, pulse interval time a kin of assisting gas and its pressure. The result reveals that parameter value of energy 0.08J, pulse 20Hz, interval time of 300 microseconds could be a good machining condition to make upper microhoel that is the diameter range of 50-70${\mu}{\textrm}{m}$. At tat time the assistant gas such air, $O_2$, Ar $N_2$, was appelied. Assistant gas of air makes heat affected zone enlarge due to burning of material surface. Also it makes microhole irregular and damageable. Because of refusion caused by chemical reaction with $Al_2O_3$ ceramic material . The $O_2$(99.9%) has good characteristics to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$ but it is expensive. Ar, $N_2$ make material crack and burnning and proved that to be unappropriate but, Ar was a better than $N_2$.