• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.264-270
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• 2000

Quantitative analysis of iron ore sinter consisting of hematite, magnetite, calcium ferrite and slag was investigated by X-ray internal standard method. After selecting NaF and $SiO_2$as internal standard materials, the calibration curves were determined and were applied to quantitative analysis of the internal standard method. Calcium ferrite was identified as a solid solution of CaO.$2Fe_2$$O_3$with 7 wt% and 3 wt% solubility of $AI_2$$O_3$and $SiO_2$, respectively. The maximum deviation of quantitative analysis of synthetic iron ore was about $\pm$5 wt%. The contents of each mineral calculated in industrial sinter were 27~40 wt% of hematite, 20~30 wt% of magnetite, 22~33 wt% of calcium ferrite and 10~20 wt% of slag.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.5
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• pp.710-715
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• 2002

The spherical nonagglomerated and uniform nanometer-size SiO$_2$particles are synthesized by the injection of TEOS vapor, irons and reaction gas in a furnace. Ions are generated by corona discharge and these ions charge SiO$_2$particles. As a result, spherical, nonagglomerated and ultrafine particles are generated in various conditions. Their morphology, charging portion and size distribution are examined by using TEM, ESP and SMPS. As the applied voltage of electrode changes from 0 to 5.0 kV, it is observed that the melon diameter of SiO$_2$particle decreases from 94 nm to 42 nm.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.5
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• pp.211-213
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• 2005

[$SiO_2$] film coated as a passivation layer for YBCO based electronic devices is investigated by measuring the micro wave properties of micro strip line resonators. The $SiO_2$ film coated resonators are compared with coated resonators for two degradation conditions, a $200^{\circ}C$ annealing in air and an exposure to air at $85^{\circ}C\;85\%$ relative humidity. The $SiO_2$ film reduces the YBCO thin film degradation caused by oxygen stoichiometry change and reaction with water.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.98.1-98.1
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• 2017

본 연구에서는 정전류 조건에서 알루미늄 합금의 PEO(Plasma Electrolytic Oxidation) 피막 형성 거동에 대한 전해질 조성의 영향을 아크 발생 양상, 전압-시간 곡선 및 형성된 표면피막의 구조를 관찰하여 연구하였다. 실험에 사용된 전해질은 NaOH 수용액에 $Na_2SiO_3$을 혼합하여 구성되었으며, NaOH와 $Na_2SiO_3$의 농도는 각각 0.01 ~ 1.0 M 와 0 ~ 2.0 M 사이로 조절되었다. 0.01 M NaOH 이하의 용액에서는 양극전압이 500 V 이상으로 상승되고 미세한 아크가 시편 표면 전체에 발생했으나, 0.02 M NaOH 이상의 농도에서는 양극전압이 300 V 이하로 감소되었고 아크발생이 관찰되지 않았다. 아크발생이 일어나지 않는 고농도의 0.5 M NaOH 용액의 경우 0.1 M 이상의 $Na_2SiO_3$를 첨가하였을 때 작은 아크의 무리가 발생되었다. 0.5 M NaOH 수용액에 0.1 M ~ 0.2 M $Na_2SiO_3$가 첨가되었을 땐 아크 무리가 발생하나 이내 일부 영역에서만 반복적으로 아크가 발생하는 로컬 버닝 현상이 일어났다. 한편 0.5 M NaOH 수용액에 0.5 M 이상의 $Na_2SiO_3$가 첨가되었을 때는 로컬 버닝이 일어나지 않고 전 표면에 걸쳐서 아크 무리가 이동하며 PEO 피막이 형성되었다. 0.01 M NaOH 수용액에서 형성된 PEO 피막의 두께는 처리 시간에 따라 증가하지 않고 $10{\mu}m$ 이하의 낮은 값을 보였다. 반면에 NaOH와 $Na_2SiO_3$ 혼합수용액에서 형성된 피막의 두께는 약 $30{\mu}m$ 이상의 높은 값을 보였다.

• Journal of Korea Foundry Society
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• v.14 no.3
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• pp.258-266
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• 1994

AC4A $Al/Al_2O_3+SiC_p$ hybrid composites were fabricated by the squeeze infiltration technique. Effect of applied pressure, volume fraction of reinforcement($Al_2O_3$ and SiC) and SiC particle size($4.5{\mu}m$, $6.5{\mu}m$ and $9.3{\mu}m$) on the solidification microstructure of the hybrid composites were examined. Mechanical properties were estimated preliminarly by fractographic observation, hardness measurement and wear test. Results show that the microstructure of the hybrid composites were quite satisfactory, namely revealing relatively uniform distribution of reinforcements and refined matrix. Some aggregation of SiC particle caused by particle pushing was observed especially in the hybrid composites containg in fine particle($4.5{\mu}m$). Refined matrix was attributed to applied pressure and increased nucleation sites with addition of reinforcements. Fractured facet also revealed finer for the hybrid composites possibly due to refined matrix. Hardness and wear resistance increased with volume fraction of reinforcements. For hybrid composites with $9.3{\mu}m$ SiC, hardness was somewhat lower and wear resistance higher than other composites.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.307-312
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• 1996

In following addition of 0.3, -0.6, 0.8, 1.0 and 5 weight percent MgSiF66H2O studies have been made of the setting and hardening characteristics of ordinary portland cement. MgSiF66H2O retarded the setting time of ordinary portland cement and extended the induction pariod of the hydration. In ordinary portland cement the setting characteristics were drastically altered especially at high MgSiF66H2O contents. Evidence was also obtained by the formation of a KSiF6 which was very fine particle. The results wee as follows. 1. Slump was slightly decreased when MgSiF66H2O added. 2. Setting time was retarded depending on the amount of retarding agent 2 to 8 hours 3. Compressive strength was almost same or some increased in comparision with opc. 4. When MgSiF66H2O was added to cement paste K2SiF6 were formed It was fine-sized distributed uniformly in cement grain and caused retardation of cement setting.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.934-940
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• 1994

Fibers of ZrO2-SiO2 system were prepared from the hydrolysis and condensation of Si(OC2H5)4 and Zr(OnC3H7)4 with different H2O/alkoxide molar ratios. It was found that fibers could be drawn in the viscosity range of 1~100 poise from HCl catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. The fibrous gels were converted into the corresponding oxide glass fibers by heating at 80$0^{\circ}C$. Mechanical test was performed on E, A and 20ZrO2-80SiO2 glass fibers reinforced cement in order to investigate the flexural strength. The flexural strength value of 20ZrO2-80SiO2 glass fibers reinforced cement was greater than those of E and A. The chemical durability of the fibers in alkaline solutions increased with ZrO2 content. The weight loss due to the corrosion by 2N-NaOH solutions at $25^{\circ}C$ for 160 hours was about 0.31$\times$10-2 mg/dm2 for the 20ZrO2-80SiO2 glass fibers, which was superior to that of Vycor glass.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.364-371
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• 1998

A novel antifuse has been developed for field programmable gate arrays (FPGA's) as a voltage programmable link with Al/$BaTiO_3/SiO_2$/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of $BaTiO_3$ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$, the program voltage was about l4.4V and on-resistances were ranged between 40 and $50{\Omega}$. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/$BaTiO_3$ and TiW-silicide/$SiO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.7-11
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• 2000

The low-voltage driven $SrTiO_3$ceramic varistor device was fabricated from $SrTiO_3$ powders prepared by co-precipitation method with $CuO-SiO_2$additives. Compare with conventional process, this process has advantages such as the reduction of the sintering temperature of $SrTiO_3$ ceramics by 100-$150^{\circ}C$ and the simplification of processing procedure. The non-linear coefficient value ($\alpha$) of the varistor showed 8.47 when it was sintered at $1350^{\circ}C$ for 2 h with 5 wt% additives in reducing atmosphere of 5% $H_2/N_2$ mixed gas. The low-voltage driven $SrTiO_3$ceramic varistor was obtained which has a breakdown voltage as low as 7 V.