• Journal of The Korean Astronomical Society
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• v.40 no.3
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• pp.61-65
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• 2007

The 2-1 and 5-4 transitions of SiO have been observed toward the Sgr B2 region, including the Principal Cloud(the GMC containing Sgr B2(M)) and its surroundings. The morphology and velocity structure of the SiO emission show a close resemblance with the HNCO Ring feature, identified by Minh & Irvine(2006), of about 10 pc in diameter, which may be expanding and colliding with the Principal Cloud. Three SiO clumps have been found around the Ring, with total column densities $N_{SiO}{\sim}1{\times}10^{14}cm^{-2}$ at the peak positions of these clumps. The fractional SiO abundance relative to $H_2$ has been estimated to be ${\sim}(0.5-1){\times}10^{-9}$, which is about two orders of magnitude larger than the quiet dense cloud values. Our SiO observational result supports the existence of an expanding ring, which may be triggering active star formations in the Principal Cloud.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.425-431
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• 1999

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.315-320
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• 2000

We have investigated the crystal structure and electrical properties of Pt/SBT/$ZrO_2$/Si (MFIS) and Pt/SBT/Si (MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$ZrO_2$/Si structure had larger grain than that of SBT/Si structure. $ZrO_2$ film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier by the analysis of AES. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$ZrO_2$/Pt/$SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-volt-age characteristics, the memory windows of Pt/SBT (210 nm)/$ZrO_2$ (28 nm)/Si structure were in the range of 1~l.5 V at the applied voltage of 4~6 V. The current densities of Pt/SBT/ZrO$_2$/Si with as -deposited Pt electrode and annealed at $800^{\circ}C$ in $O_2$ambient were $8\times10^{-8} A/\textrm{cm}^2$ and $4\times10^{-8}A/\textrm{cm}^2$ , respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.657-661
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• 2003

The elastic moduli or fracture strengths of multi-layered film (SiO$_2$/po1y-Si/SiN/SiO$_2$, 2.77 $\mu\textrm{m}$ thick), CVD diamond film (1.6 $\mu\textrm{m}$ thick), SiO$_2$ film (1.0 $\mu\textrm{m}$ thick) and SiN film (0.43 $\mu\textrm{m}$ thick) made for the membrane of ink-jet printer head were measured with cantilever beam bending method using nanoindenter after fabricating in the form of micro cantilever beam (${\mu}$-CLB). And the elastic moduli of ${\mu}$-CLB of SiO$_2$ film and SiN film were compared with the value of each film on silicon substrate determined with nanoindentation method. The results showed that the modulus and strength of multi-layered film decrease from 68.08 ㎬ and 2.495 ㎬ to 56.53 ㎬ and 1.834 ㎬, respectively as the width of CLB increases from 18.5 $\mu\textrm{m}$ to 58.5 $\mu\textrm{m}$. And the elastic moduli of SiO$_2$ and SiN films measured with ${\mu}$-CLB bending method are 68.16 ㎬ and 215.45 ㎬, respectively and the elastic moduli of these films on silicon substrate measured with nanoindentation method are 98.78 ㎬ and 219.38 ㎬, respectively. These results show that with ${\mu}$-CLB bending technique, moduli can be measured to within 2%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.528-532
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• 1999

Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

• Journal of Powder Materials
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• v.21 no.5
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• pp.377-381
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• 2014

This work describes the coloration, chemical stability of $SiO_2$ and $SnO_2$-coated blue $CoAl_2O_4$ pigment. The $CoAl_2O_4$, raw materials, were synthesized by a co-precipitation method and coated with silica ($SiO_2$) and tin oxide ($SnO_2$) using sol-gel method, respectively. To study phase and coloration of $CoAl_2O_4$, we prepared nano sized $CoAl_2O_4$ pigments which were coated $SiO_2$ and $SnO_2$ using tetraethylorthosilicate, $Na_2SiO_3$ and $Na_2SiO_3$ as a coating material. To determine the stability of the coated samples and their colloidal solutions under acidic and basic conditions, colloidal nanoparticle solutions with various pH values were prepared and monitored over time. Blue $CoAl_2O_4$ solutions were tuned yellow color under all acidic/basic conditions. On the other hand, the chemical stability of $SiO_2$ and $SnO_2$-coated $CoAl_2O_4$ solution were improved when all samples pH values, respectively. Phase stability under acidic/basic condition of the core-shell type $CoAl_2O_4$ powders were characterized by transmission electron microscope, X-ray diffraction, CIE $L^*a^*b^*$ color parameter measurements.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1097-1098
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• 2006

The Powder characteristics and sintering behavior of $SiO_2$ coated $BaTiO_3$ were studied. Silica coated $BaTiO_3$ powders were prepared by sol-gel method. The particle size of the $BaTiO_3$ powders were $\sim35$ nm and the thickness of the $SiO_2$ coating layer was $\sim5$ nm. As the $SiO_2$ content increased, the $SiO_2$ layers improved the powder dispersion. The Zeta potential of $SiO_2$ coated $BaTiO_3$ was getting close to that of pure silica with a more negative charge, compared with that of the uncoated $BaTiO_3$. The onset temperature of shrinkage curves shifted to higher temperatures with increasing $SiO_2$ contents

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1331-1336
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• 1995

The glass-ceramics for ferro-electric were made from compositions of 70PbO.16TiO2.8SiO2.4B2O3.2AlPO4 (wt%) and 67.5PbO.20TiO2.8.5SiO2.2B2O3.2AlPO4 (wt%). The crystallization kinetics for PbTiO3 crystalline phase formation from glass was studied using non-isothermal DSC techniques. The values of activation energy, ΔE using variables of heating rate and temperature were calculated at various reaction fractions obtained from peak area over DSC. The results indicated that activation energy was lowest at 60% reaction fractions and the activation energy of glass containing 20.0 wt% TiO2 is higher than that of glass containing 16.0 wt% TiO2. The crystallization mechanism was three dimensional growth (n=4).

• Cement
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• s.61
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• pp.53-57
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• 1975

1) 본논문은 Zement-Kalk-Gips 75년도 8월호에 게재된 V. Satava씨 및 J. Komrska씨의 $\ulcorner$Gips und $\SiO_2$-Hydrosolein neues Bindemittel$\lrcorner$을 번역 발췌한 것으로 주요 내용은 다음과 같다. 2) $\SiO_2$ Hydrosol 중의 반수석고경화 현탁액의 강도보다 높다. 3) Hydrosol중의 $\SiO_2$ 입자는 행동이 액상과 같으므로 반수석고 현탁액의 점도는 Hydrosol중이나 물중이나 유사하며 단지 $\SiO_2$의 부피만큼 물, 석고비를 감소시킨다. 4) 경화과정에서 단위 부피당 석고 결정이 차지하는 부피가 크므로 순수하게 물을 사용했을 때보다는 강도가 높다. 5) $\SiO_2$ 분자는 경화물질의 Skeleton속의 기공을 채워 표면의 특성에 영향을 준다.