• 한국재료학회지
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• 제11권12호
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• pp.1080-1085
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• 2001

Dielectric properties and leakage current characteristics of 100 nm-thick $Ta_2O_5/Al_2O_3$multilayer thin films, which were fabricated by reactive sputtering of$Al_2O_3$and$Ta_2O_5$ successively on top of each other for total 9 layers, have been investigated with variation of the$Al_2O_3$content$(i.e,\;Ta_2O_5/Al_2O_3 \;thickness\;ratio)$.$Ta_2O_5/Al_2O_3$films were amorphous regardless of the$Al_2O_3$content. With increasing the$Al_2O_3$content from 0% to 100%, refractive index of the $Ta_2O_5/Al_2O_3$films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with the$Al_2O_3$content was in good agreement with the behavior that was obtained by assuming parallel capacitors of$Al_2O_3$and Ta_2O_5$. Leakage current characteristics of $Ta_2O_5/Al_2O_3$ multilayer films were superior to those of $Ta_2O_5$ and$Al_2O_3$films. $Ta_2O_5/Al_2O_3$ films of 5% and 10%$Al_2O_3$content exhibited excellent leakage current densities which were lower than $10^{-7} A/cm^2$ at 1MV/cm.

• 한국세라믹학회지
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• 제33권4호
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• pp.405-410
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• 1996

The partial substitution of LiTaO3 with Al2O3 caused the variation of dielectric properties and a lower melting temperature yielding an easier growth of single crystal. The lattice constants and Raman band broadening were measured for the LiTaO3 solid solution in which the cations of Li+ and Ta5+ were partially substituted by Al3+ cation. The LiTaO3 type limit phases were obtained. ; Li1.15Al0.45Ta0.7O3 for cationic excess Li1.15Al0.45Ta0.7O3 for stoichiometry Li0.85Al0.05TaO3 for cationic deficit. The second phase was formed beyond the solubility limit. The limit phase (Li0.85Al0.05TaO3) in the region of cationic deficit showed the lowest Cuire temperature of 61$0^{\circ}C$ and melting point of 152$0^{\circ}C$ compared to the solid solutions in other regions (TMp=1$650^{\circ}C$, Tc=69$0^{\circ}C$ for LiTaO3)

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1502-1504
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• 2003

최근 전자기기의 경박단소화 추세는 전자기기의 크기와 가격의 감소를 이끌었으며 이러한 추세는 앞으로 지속될 것이다. 이와 같은 현상으로 전자기기를 구성하는 요소의 절반이상을 차지하는 단위수동소자의 경우 소형화를 넘어 박막화 및 집적화가 절실히 요구되는 실정이다. 따라서 본 연구에서는 현재 GHz 대역의 휴대용 무선통신 송 수신부 등에 사용되고 있는 기판이 $Al_2O_3$ 기판인 점을 고려하여 기판의 공통화를 위해 $Al_2O_3$ 기판 위에 Ta/$Ta_2O_5$/Ta 구조를 갖는 MIM 박막커패시터를 제작하여 그 특성을 고찰하였다. 모든 박막의 증착은 RF-magnetron reactive sputtering법에 의해 이루어졌으며, 유전체 열처리는 $700^{\circ}C$ 진공상태에서 60 sec 동안 수행하였다. XRD 분석결과, as-deposited $Ta_2O_5$ 박막은 열처리 후에 비정질상에서 결정질상으로 변환되었다. Ta/$Ta_2O_5$/Ta/Ti/$Al_2O_3$ 커패시터의 전기적 특성으로는 C-F, C-V, I-V 를 측정하였다.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• 분석과학
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• 제5권1호
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• pp.115-120
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• 1992

강유전체인 $LiTaO_3$ 소재는 SAW filters나 IR sensors의 기본재료로 사용되고 있다. Dopant로서 $Al_2O_3$를 $LiTaO_3$에 일부 치환함으로써 유전 특성을 변화시키고 특히 용융점을 낮춤으로써 단결정 제조를 용이하게 한다. X-선 회절분석에 의한 격자상수 변화와 Raman spectroscopy의 band broadening을 측정한 결과 $LiTaO_3$에 대한 $Al_2O_3$의 고용한계가 $Li_{1-X}Al_{2X}Ta{1-X}O_3$에서 X=0.25mol이었으며, 고용한계 이상에서는 2차상인 $Al_2O_3$상이 XRD로 관찰되었다. Grain size에 의한 Raman band의 broadening을 고려하기 위하여 단결정과 소결체 $LiTaO_3$를 측정 비교하였다.

• 한국표면공학회지
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• 제39권3호
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• pp.129-136
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• 2006

The high velocity oxy-fuel sprayed coatings of 38Ni-23Co-20Cr-11Al-3Y-5Ta, 25Ni-34Co-20Cr-11Al-3Y-2Re and 32Ni-34.5Co-22Cr-11Al-0.5Ir (in wt%) were oxidized at 1000 and $1100^{\circ}C$ in air in order to find the alloying effect of Ta, Re and Ir on the oxidation properties of the NiCoCrAlY-base coatings. The primary phase of the coatings was $Ni_3Al$. The oxides formed on the coatings consisted primarily of ${\alpha}-Al_2O_3$, together with some $CoCr_2O_4,\;CoAl_2O_4$, and $Al_5Y_3O_{12}$. Tantalum oxidized to $Ta_2O_5$ and $Ta_2O_{22}$. However, no oxides of Re and Ir were detected by XRD owing to their thermodynamic inertness and/or their small amount.

• 한국세라믹학회지
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• 제47권5호
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• pp.461-466
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• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• 한국광물학회지
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• 제2권1호
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• pp.8-10
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• 1989

Sphene from the McDonald pegmatite near Bancroft, Ontario, Canada was analyzed using EPMA. It contains 4.3 to 6.3 weight percent of Nb2O5 with an average formula Ca1.02(Ti0.62Al0.22Nb0.07Fe0.06Ta0.01)Si0.99(O4.85F0.16). Three types of subtitutions are possible; 1)2Ti4+=(Nb, Ta)5+ + (Al, Fe3+), 2) Ti + O = (Al, Fe3+) + (F, OH), and 3) 2Ti + O = Fe2+ + (Nb, Ta)5+ + (F, OH). T재 different schemes of substitutions for balancing the analysis are considered when the iron is either all ferric or all ferrous. Assuming stoichiometry fo Ca and Si, a general formula derived from the two different schemes is Ca(Ti0.64Al0.22Fe3+0.06-X {{{{Fe_{x}^{2+} }} Nb0.01)Sio4.80-XF0.16(OH)0.04+x.

• 한국자기학회지
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• 제11권5호
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• pp.196-201
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• 2001

Si(100)/Ta(50 )/NiFe(60 )/FeMn(250 )/NiFe(70 )/Al$_2$O$_3$/NiFe(150 )/Ta(50 )구조를 가진 자기터널접합의 자기저항비 향상에 관해서 연구하였다. 자성층과 절연층 사이 계면에 CoFe을 삽입하여 5.75%에서 13.7%까지 향상시켰다. 그리고 절연층은 16 의 Al을 순수한 산소 및 산소/아르곤 혼합 분위기에서 프라즈마 산화법으로 형성하였다. 순수한 산소 분위기에서는 최적 산화시간 30초에서 13.7%의 자기저항비를 얻었지만,산소/아르곤의 혼합기체를 사용하면 최적 산화시간 40초에서 15.3%의 자기저항비를 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.157-160
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• 2001

We have investigated the Dielectric and Piezoelectric properties of $xPb(R_{1/2}Ta_{1/2})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$ (R=Al,Y) solid solutions in which R ions are substituted for Al and Y ions. The maximum value of electromechanical coupling factor kp of 55% and 51% were obtained at the composition of 5mol% PAT and 5mol% PYT. However mechanical quality factor$(Q_m)$ had a minimum value of 44 and 69 at the composition of 5mol% PAT and 5mol% PYT. Also, the maximum value of piezoelectctric constant of $d_{33}(329[pC/N])$ and $d_{33}(310[pC/N])$ were obtained at the composition of 5mol% PAT and 5mol% PYT.