• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.58-62
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• 2001

The relationship between the addition of Sb$_2$O$_3$ and the color difference by solarization in photosensitive glasses was investigated. Glasses containing CeO$_2$ and Sb$_2$O$_3$ simultaneously and glasses with only CeO$_2$ were changed reddish and yellowish respectively after exposing to ultra violet ray. Color difference between compositions was represented by dominant wavelength and purity. Since, in glasses containing CeO$_2$ and Sb$_2$O$_3$ simultaneously, Sb$_2$O$_3$ as reduction agent affected Ce$^3+$ ions to increase in glass and more Ce$^4+$ ions were induced than in glasses with only CeO$_2$ during UV irradiation, more electrons released by photo-ionization, which were color centers, were trapped by Ce$^4+$. In conclusion, the introduction of Sb$_2$O$_3$ to photosensitive glasses with CeO$_2$ resulted in the change of color center concentration in glasses and prevented the solarization of photosensitive glasses with CeO$_2$.

• Journal of the Korean Chemical Society
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• v.38 no.5
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• pp.359-365
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• 1994

The crystal stucture of hexapotassium undecahydrogen tetratungsto hexaantimonate(V) tetrahydrate has been determined from single crystal X-ray diffraction data. Crystal data are as follows: $K_6H_{12}[Sb_6W_4O_{36}]{\cdot}4H_2O$, Fw = 2360.62, tetragonal, I$4_1$/a, a = 10.799(1) ${\AA}$, c = 35.244(5) ${\AA}$, V = 4110.1(7) ${\AA}^3$, Z = 4, $D_x$ = 3.82 g$cm^{-3}$, $\mu(MoK\alpha)$ = 160.15 $cm^{-1}$, T = 293 K, final R = 0.0356 for 2400($F_0 > 3\sigma(F_0))$ independent reflections. The $[H_{12}Sb_6W_4O_{36}]^{-6}$ polyanion independently consists of one tungsten, two antimony, and nine oxygen atoms and belongs to the $\bar4(S_4)$ point group. This polyanion is formed by two open octahedra five membered ring of Sb(3)$O_6-W(1)O_6-Sb(2)O_6-W(1)O_6-Sb(3)O_6$ which is connected at right angle. The Sb-W, Sb-O, and W-O bond distances range from 3.2304(9) to 3.2403(5) $\AA$, 1.745(8) to 2.334(6) $\AA$, and 1.914(7) to 2.039(7) $\AA$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1697-1701
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• 2016

The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.675-681
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• 2012

We aimed to examine the co-doping effects of 1/6 mol% $Mn_3O_4$ and 1/4 mol% $Cr_2O_3$ (Mn:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Cr-doped ZBS, ZBS(MnCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ (also ${\beta}-Bi_2O_3$ at Sb/Bi ${\leq}$ 1.0) were detected for all of the systems. Mn and Cr are involved in the development of each phase. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 system by Mn rather than Cr doping. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(MnCr), the varistor characteristics were improved dramatically (non-linear coefficient, ${\alpha}$ = 40~78), and seemed to form ${V_o}^{\cdot}$(0.33 eV) as a dominant defect. From impedance and modulus spectroscopy, the grain boundaries can be seen to have divided into two types, i.e. one is tentatively assigned to ZnO/$Bi_2O_3$ (Mn,Cr)/ZnO (0.64~1.1 eV) and the other is assigned to the ZnO/ZnO (1.0~1.3 eV) homojunction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• Analytical Science and Technology
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• v.13 no.6
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• pp.731-735
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• 2000

The acid digestion bomb pretreatment method for the determination of antimony in a commercial fire retardant material sample (DBDPE-$Sb_2O_3$) was studied. DBDPE-$Sb_2O_3$ sample was digested with $H_2SO_4:HCl$(1:2) mixture in digestion bomb at $220^{\circ}C$ for 2 hrs. and antimony was determined by atomic absorption spectrophotometry. Recovery of 99.6-99.8% and C.V. of 0.94-1.07% for Sb was obtained for spiked real samples. In the present method, the analytical results obtained for antimony were 40.3 and 36.3% (w/w), respectively.

• Journal of Aerospace System Engineering
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• v.7 no.4
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• pp.36-41
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• 2013

In order to improve incombustibility of EPDM(Ethylene propylene diene monomer)-based rubber, inorganic materials as $Al(OH)_3$ and $Sb_2O_3$ were added. The mechanical and thermal properties have been measured for vulcanized rubber loaded with different concentrations of $Al(OH)_3$ and $Sb_2O_3$. As inorganic material contents increases from 5phr to 30phr, the specific gravity and hardness increase while elongation at break decreases. This study performed incombustibility test and thermal analysis through TGA(Thermogravimetric Analyzer). As a results, incombustible and thermal properties of EPDM-based rubber were improved as $Al(OH)_3$ and $Sb_2O_3$ contents increase.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.185-193
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• 1994

Effect of Sb2O3 addition on microstructure and the PTCR characteristic was investigated. The range of the Sb2O3 content and the sintering temperature showing semiconducting and PTCR characteristic, were 0.05~0.125 mol%, and over 130$0^{\circ}C$, respectively. We found that PTCR characteristic, that is, room-temperature resistivity and specific resistivity ration were dependent on the microstructure.