• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• The Korean Journal of Ceramics
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• 제7권2호
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• pp.58-62
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• 2001

The relationship between the addition of Sb$_2$O$_3$ and the color difference by solarization in photosensitive glasses was investigated. Glasses containing CeO$_2$ and Sb$_2$O$_3$ simultaneously and glasses with only CeO$_2$ were changed reddish and yellowish respectively after exposing to ultra violet ray. Color difference between compositions was represented by dominant wavelength and purity. Since, in glasses containing CeO$_2$ and Sb$_2$O$_3$ simultaneously, Sb$_2$O$_3$ as reduction agent affected Ce$^3+$ ions to increase in glass and more Ce$^4+$ ions were induced than in glasses with only CeO$_2$ during UV irradiation, more electrons released by photo-ionization, which were color centers, were trapped by Ce$^4+$. In conclusion, the introduction of Sb$_2$O$_3$ to photosensitive glasses with CeO$_2$ resulted in the change of color center concentration in glasses and prevented the solarization of photosensitive glasses with CeO$_2$.

• 대한화학회지
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• 제38권5호
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• pp.359-365
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• 1994

Hexapotassium undecahydrogen tetratungsto hexaantimonate(V) tetrahydrate 단결정의 X-선 회절 강도 데이타로부터 결정 구조를 정하였다. 결정학적 데이타는 다음과 같다. $K_6H_{12}[Sb_6W_4O_{36}]{\cdot}4H_2O$, Fw = 2360.62, tetragonal, I$4_1$/a, a = 10.799(1) $\AA$, c = 35.244(5) $\AA$, V = 4110.1(7) $\AA^3$, Z = 4, $D_x$ = 3.82 g$cm^{-3}$, $\mu(MoK\alpha)$ = 160.15 $cm^{-1}$, T = 293 K, final R = 0.0356 for 2400($F_0 > 3\sigma(F_0))$의 독립적인 회절 강도를 이용하여 최종 신뢰도 인자 R = 0.0356를 얻었다. $[H_{12}Sb_6W_4O_{36}]^{6-}$ 다중 음이온은 1개의 W원자, 2개의 Sb원자 및 9개의 산소 원자가 독립적이며 점군 $\bar4(S_4)$에 속한다. 이 다중 음이온은 열린 두 개의 Sb(3)$O_6-W(1)O_6-Sb(2)O_6-W(1)O_6-Sb(3)O_6$ 팔면체 오각 고리가 서로 직각으로 연결되어 만들어진 것이다. Sb-W, Sb-O, 및 W-O 원자간 거리의 범위는 각각 3.2304(9) - 3.2403(5) $\AA$, 1.745(8) - 2.334(6) $\AA$, 및 1.914(7) - 2.039(7) $\AA$이다.

• 한국결정성장학회지
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• 제13권5호
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• pp.241-246
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• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

• 전기학회논문지
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• 제65권10호
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• pp.1697-1701
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• 2016

The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

• 한국재료학회지
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• 제22권12호
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• pp.675-681
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• 2012

We aimed to examine the co-doping effects of 1/6 mol% $Mn_3O_4$ and 1/4 mol% $Cr_2O_3$ (Mn:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Cr-doped ZBS, ZBS(MnCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ (also ${\beta}-Bi_2O_3$ at Sb/Bi ${\leq}$ 1.0) were detected for all of the systems. Mn and Cr are involved in the development of each phase. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 system by Mn rather than Cr doping. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(MnCr), the varistor characteristics were improved dramatically (non-linear coefficient, ${\alpha}$ = 40~78), and seemed to form ${V_o}^{\cdot}$(0.33 eV) as a dominant defect. From impedance and modulus spectroscopy, the grain boundaries can be seen to have divided into two types, i.e. one is tentatively assigned to ZnO/$Bi_2O_3$ (Mn,Cr)/ZnO (0.64~1.1 eV) and the other is assigned to the ZnO/ZnO (1.0~1.3 eV) homojunction.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• 분석과학
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• 제13권6호
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• pp.731-735
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• 2000

상용되는 난연제인 DBDPE-$Sb_2O_3$ 중 안티몬을 신속 정확하게 분석하기 위하여 가압 산 분해법을 이용하여 전처리하였다. DBDPE-$Sb_2O_3$ 시료를 가압 산 분해장치 내에서 $H_2SO_4:HCl$(1:2) 혼합산을 가하여 $220^{\circ}C$에서 2시간 동안 분해시킨 후 AAS를 이용하여 Sb를 정량하였다. 그 결과 99.6-99.8%의 회수율과 0.94-1.07%의 변동계수값을 얻었다. 이 전처리 방법을 실제시료에 적용하여 40.3과 36.3%의 Sb 함량을 구할 수 있었다.

• 항공우주시스템공학회지
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• 제7권4호
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• pp.36-41
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• 2013

In order to improve incombustibility of EPDM(Ethylene propylene diene monomer)-based rubber, inorganic materials as $Al(OH)_3$ and $Sb_2O_3$ were added. The mechanical and thermal properties have been measured for vulcanized rubber loaded with different concentrations of $Al(OH)_3$ and $Sb_2O_3$. As inorganic material contents increases from 5phr to 30phr, the specific gravity and hardness increase while elongation at break decreases. This study performed incombustibility test and thermal analysis through TGA(Thermogravimetric Analyzer). As a results, incombustible and thermal properties of EPDM-based rubber were improved as $Al(OH)_3$ and $Sb_2O_3$ contents increase.

• 한국세라믹학회지
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• 제31권2호
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• pp.185-193
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• 1994

Effect of Sb2O3 addition on microstructure and the PTCR characteristic was investigated. The range of the Sb2O3 content and the sintering temperature showing semiconducting and PTCR characteristic, were 0.05~0.125 mol%, and over 130$0^{\circ}C$, respectively. We found that PTCR characteristic, that is, room-temperature resistivity and specific resistivity ration were dependent on the microstructure.