• 대한화학회지
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• 제55권1호
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• pp.81-85
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• 2011

이소부탄의 산화탈수소반응(ODH)에 대한 $V_{0.9}Sb_{0.1}O_x$ 촉매계의 5가지 담지체의 촉진효과를 조사하였다. 사용된 5가지 담지체는 감마-알루미나, 알파-알루미나, 실리카-알루미나, 실리카겔, 마그네슘 산화물이다. 촉매는 사용된 담지체에 따라 그 효과가 다르게 나타났다: ${\gamma}-Al_2O_3$ > $\alpha$-$Al_2O_3$ > Si-Al-O> $SiO_2$ $\approx$MgO$\gg$unsupported. V-Sb-O 비율은 별로 촉매 활성과 선택성에 영향을 미치지 않았다. 촉매 성분들이 담지체에 골고루 잘 분포된 이유로 인해 감마-알루미나에 담지된 $V_{0.9}Sb_{0.1}O_x$ 촉매계가 성능이 제일 뛰어났다.

• 한국재료학회지
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• 제14권2호
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• pp.115-120
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• 2004

Perovskite barium-strontium titanate, $(Ba, Sr)TiO_3$ was prepared and effects of $Sb_2$O$_3$ additives on its PTCR properties were investigated. $The (Ba,Sr)TiO_3$ with 0.05～0.25 mol% $Sb_2$$O_3$ showed semiconducting PTCR behavior and anomalous grain growth was also observed when it was sintered above $1330^{\circ}C$. It was considered that charge compensation by doping 8b203 as well as abnormal grain growth by sintering lead to resistivity reduction from insulating to semiconducting transition.

• 한국결정성장학회지
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• 제13권5호
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• pp.254-259
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• 2003

Sol-gel dip coating법으로 soda lime glass 기판 위에 ATO(antimony-doped tin oxide) 투명전도막을 제조할 때, 기판 위에 형성된 $SiO_2$ barrier 층 및 $N_2$ gas annealing 에 따른 광투과율 및 전기적 특성에 대한 효과를 정량적으로 측정하고, XPS(X-ray photoelectron spectroscopy) 분석을 통해 고찰하였다. $SiO_2$ barrier층을 갖는 glass 기판 위에 코팅된400 nm 두께의 ATO 박막을 질소분위기에서 annealing한 결과, 광 투과율은 84%그리고 전기저항은 약 $5.0\times 10^{-3}\Omega \textrm{cm}$로 측정되었다 XPS 분석결과 이러한 우수한 전기전도성은 $SiO_2$ buffer층이 glass 기판으로부터 Na 이온의 확산을 막아 ATO막 내에 $Na_2SnO_3$ 및 SnO와 같은 2차상 불순물의 형성을 억제하여 막 내부의 Sb의 농도 및 $Sb^{5+}/Sb^{3+}$ 비를 증가시키고, $N_2$ annealing은 $Sb^{5+}$ 도 환원시키지만 $Sn^{4+}$를 환원시키는 효과가 크게 작용하였기 때문으로 사료된다.

• 공업화학
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• 제32권5호
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• pp.516-523
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• 2021

본 연구는 대기 중 대표적인 미세먼지 2차 유발물질인 질소산화물 제어에 있어 암모니아를 환원제로 사용하는 선택적 촉매 환원법(Selective Catalytic Reduction; SCR)을 이용한 연구를 수행하였다. NH₃-SCR 실험은 상용촉매인 V/W/TiO₂와 Sb를 첨가한 V/W-Sb/TiO₂ 촉매를 사용하였으며 phosphorous에 의한 내피독성을 확인하였다. NH₃-SCR 실험 결과, Sb의 첨가는 P에 대한 내구성을 갖는 것으로 확인되었다. 또한 이에 대한 원인을 확인하기 위하여 BET, XPS, H₂-TPR, NH₃-TPD, FT-IR 분석을 통해 물리·화학적 특성을 비교분석하였다. 분석 결과 V/W/TiO₂ 촉매에 Sb 첨가 시 P가 첨가됨에 따라 SbPO₄ 결합을 형성하고 VOPO₄의 생성을 억제하였으며, P 첨가 전 촉매의 redox 특성을 유지함으로써 P에 대한 내피독성을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.553-555
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• 1987

In the standard system of low voltage-oriented ZnO varistor,a small amount of $Sb_2O_3$ was added to improve the nonlinear exponent and then to find the variation of breakdown characteristics, 0.1m/o-SiO and 0.1m/o-$TiO_2$, respectively,were added We considered relationship between the breakdown voltage of systems and the microstructure. We found that the system containing 0.1m/o-$Sb_2O_3$ showed very high nonlinear exponent. And we found that SiO enhanced breakdown voltage and $TiO_2$ lowered it.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.54-58
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• 1996

In this paper, the structure, dieletric and piezoelectric properties of Pb(Fe$_{\frac{1}{2}}$/Sb$_{\frac{1}{2}}$$O_3$+ Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system ceramics were investigated and the effects of donor Nb$^{+5}$ on these properties were characterized for the application of the actuator. In xPb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}}$)O$_3$+ (1-x) Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system ceramics, tetragonality decreased as x and Nb$_2$O$_{5}$ wt% were increased. In 0.05Pb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}$}$)O$_3$+ 0.95 Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system, grain size was smallest but showed best dielectric and piezoelectric properties. The specimen sintered at 120$0^{\circ}C$ in 0.05pb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}}$ )O$_3$+ 0.95 Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$+ Nb$_2$O$_{5}$ 0.6wt% exihibited best piezoeletric properties such as $K^{p}$ =64%, d$_{33}$ =490 [$\times$10$^{-12}$ C/N] and strain was 1320[$\times$10$^{-6}$ Δ$\ell$/$\ell$]at AC 6kV/cm

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.205-206
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• 2012

$InSbO_4$ (Indium antimony oxide) 박막을 RF 마그네트론 스퍼터링법을 이용하여 $SiO_2$가 코팅된 Si wafer ($SiO_2/Si$) 기판 또는 $400^{\circ}C$에서 융해된 석영 유리 (silica glass) 기판 위에 증착시켰다. 고결정성과 화학양론의 $InSbO_4$ 막을 증착시키기에 최적화된 조성의 $In_{0.2x}Sb_{0.3x}O_x$ 타겟을 이용하여 Ar과 $O_2$ 혼합 가스 분위기에서 스퍼터링 증착을 수행하였다. $InSbO_4$ 막은 가시광 영역에서 80%이상의 투과도를 보였고, $400^{\circ}C$에서 $1100^{\circ}C$사이의 어닐링 온도에서는 $InSbO_4$ 막의 전기적 성질이 높은 고온 내구성을 가지는 것을 알 수 있었다. 그러나 $1200^{\circ}C$ 이상의 어닐링 온도에서는 새로운 $Sb_2O_4$ 상의 분리로 인해 $InSbO_4$ 막의 비저항이 급격히 증가하였다.

• 한국세라믹학회지
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• 제36권10호
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• pp.1108-1114
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• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• 한국재료학회지
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• 제21권4호
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.305-305
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• 2010

In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric transformer application (Na,K)(Nb,Sb)$O_3$ ceramics were fabricated using conventional oxides mixed method and their piezoelectric and dielectric characteristics were investigated according to the amount of $Bi_2O_3$ addition.